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| Number | Title | Issue Date |
| 7238968 | Semiconductor device and method of making the same The present invention presents a semiconductor device (10) which is adapted to a solar cell, and in which a semiconductor element (1) is produced by forming one flat surface (2) on a spherical or substantially spherical silicon single crystal ( | 07/03/2007 |
| 6677656 | High-capacitance photodiode A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, a read MOS transistor, and a transfer MOS transistor, the photodiode and the transfer transistor being formed in a same substrate of a first conductiv... | 01/13/2004 |
| 6670657 | Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun... | 12/30/2003 |
| 6610920 | Photoelectric conversion device Plasma is generated from a plasma generating gas comprising an inert gas and hydrogen gas. Silicon material is passed through the plasma and heated so as to form a crystalline silicon particle containing hydrogen at a concentration of 1×1016 -... | 08/26/2003 |
| 6606157 | Detection of hazardous airborne fibres A fibre detector assembly comprising: (i) a scattering chamber body; (ii) means for drawing airborne particles through said body chamber, said means being adapted such the the particles tend to travel in single file with the longitudinal axis of particles with... | 08/12/2003 |
| 6551903 | Melt through contact formation method A thin film photovoltaic devices is described, having a glass substrate 11 over which is formed a thin film silicon device having an n++ layer 12, a p layer 13 and a dielectric layer 14 (typically silicon oxide or silicon nitride). To create a ... | 04/22/2003 |
| 6404031 | Transparent semiconductor light-receiving element and manufacturing method thereof If a semiconductor device employing semiconductor light-receiving elements is disposed on a single optical axis, laser light which is incident on these light-receiving elements is interrupted by the semiconductor device, and it will be impossible to confi... | 06/11/2002 |
| 6384317 | Solar cell and process of manufacturing the same The solar cell in the semiconductor substrate includes at least a radiation receiving front surface and a second surface. The substrate includes a first region of one type of conductivity and a second region of the opposite conductivity type with at least... | 05/07/2002 |
| 6384436 | Photoelectric transducer and solid-state image sensing device using the same Disclosed is a photoelectric transducer having a photodiode that is formed on a second-conductivity-type well and is composed of a first-conductivity-type region to accumulate signal charge when light is supplied and a first second-conductivity-type regio... | 05/07/2002 |
| 6309906 | Photovoltaic cell and method of producing that cell The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radio frequency generator (15). The device includes... | 10/30/2001 |
| 6294822 | Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material The present invention discloses a small spherical solar cell SS (spherical semiconductor) and the manufacturing method for the same, comprising: a spherical core 1; a reflective film 2 formed on the surface of core 1; a semiconductor thin film layer (p ty... | 09/25/2001 |
| 6204545 | Semiconductor device The present invention is a semiconductor device which has one or a plurality of spherical semiconductor elements as its main component. The spherical semiconductor element is a spherical semiconductor crystal with a photovoltaic part and a pair of electro... | 03/20/2001 |
| 6180967 | Bicolor infrared detector with spatial/temporal coherence A dual-band planar infrared detector with space-time coherence, with a stack of semiconductor layers (16, 18, 20, 21) forming first and second photodiodes. The detector has a planar structure in which each layer has a part showing on a surface (22) substa... | 01/30/2001 |
| 6150683 | CMOS-based color pixel with reduced noise in the blue signal The blue signal of a CMOS-based color pixel is increased with respect to the red and green signals by lowering the doping concentration of the surface regions of the pn-junction photodiodes that are used in the blue imaging cells with respect to the surfa... | 11/21/2000 |
| 6130380 | Solar cell and fabrication method thereof In a solar cell, a crystal defect layer by ion implantation or an amorphous layer by ion implantation is formed between p type diffusion layers provided in an island-like manner at a side opposite to a light receiving surface of a low concentration p type... | 10/10/2000 |
| 6111305 | P-I-N semiconductor photodetector A semiconductor photodetector includes a SOI substrate; a p-i-n photodiode provided on the SOI substrate, the p-i-n photodiode having an i-type semiconductor region; an insulator film provided on the i-type semiconductor region; and a depleting electrode ... | 08/29/2000 |
| 6072206 | Solid state image sensor The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of th... | 06/06/2000 |
| 6054341 | Method of manufacturing charge-coupled device having different light-receiving region and charge-isolating layer structures A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region (BCCD) formed within the second P-type well region, an N-type p... | 04/25/2000 |
| 6031259 | Solid state image pickup device and manufacturing method therefor A method for manufacturing a light receiving portion for a solid state image pickup device includes the steps of forming a well of a second impurity type on a substrate of a first impurity type, forming a channel stop within an upper surface of the well, ... | 02/29/2000 |
| 6015721 | Method of manufacturing an avalanche photodiode A method of manufacturing an avalanche photodiode capable of effectively preventing edge breakdown is disclosed. First, so as to manufacture an avalanche photodiode an absorption layer, a grading layer, a charge sheet layer of a first conductivity type an... | 01/18/2000 |
| 6005185 | Coolant sealing structure for a solar cell A coolant sealing structure for a solar cell of which the sealing property is maintained with high reliability in use for a long period. A solar cell has its light receiving surface and a reinforced portion formed around the fringe portion of the light re... | 12/21/1999 |
| 5994751 | Photodiode having reduced series resistance, and method for fabrication thereof In an SOI substrate, an active zone is completely surrounded by a trench filled with insulating material. Disposed adjacent to the trench is a first doped zone which is formed, in particular, by out-diffusion from a doped layer disposed on the wall of the... | 11/30/1999 |
| 5990415 | Multilayer solar cells with bypass diode protection A multilayer solar cell with bypass diodes includes a stack of alternating p and n type semiconductor layers 10, 11, 12, 13, 14 arranged to form a plurality of rectifying photovoltaic junctions 15, 16, 17, 18. Contact is made to underlying layers by way o... | 11/23/1999 |
| 5973260 | Converging type solar cell element The present invention discloses a converging type solar cell element able to restrain recombination of carriers and inflow of carriers into an embankment section and improve photoelectric conversion efficiency. A p+ diffusion layer 16 is forme... | 10/26/1999 |
| 5961742 | Converging solar cell element For a converging solar cell element capable of preventing excessive concentration of converged sunlight to one point without lowering the degree of light convergence, a p+ layer 14 and an n+ layer 12 are formed on the rear surface of a silicon substrate; ... | 10/05/1999 |
| 5797998 | Multiple layer thin film solar cells with buried contacts A multilayer solar cell structure includes a stack of alternating p-type and n-type semiconductor layers arranged to form a plurality of rectifying photovoltaic junctions. Low-cost cells are manufactured from low-quality material which is optimized by emp... | 08/25/1998 |
| 5785768 | Photo cells, photo cell arrays, and electrolytic devices using these cells and arrays A photo cell and a photo cell array which have high photoelectric conversion efficiency, little leakage current, long life, and high reliability, as well as a electrolytic device that employs the cell and array. The photo cell (1) comprises: a base materi... | 07/28/1998 |
| 5747864 | Light receiving element and a method of fabricating the same A light receiving element having excellent characteristics, including high sensitivity and high response speed, can be achieved by a light element comprising unit structures each having two pn junction semiconductor layers, and a lightly doped semiconduct... | 05/05/1998 |
| 5731622 | Semiconductor photodiode It is the object of the invention to suppress the leakage current of a semiconductor photodiode. A trench, a side wall of which is covered with and insulating layer, is formed on the surface of a semiconductor substrate of the first conductivity type. The... | 03/24/1998 |
| 5725006 | Solar battery cell, a solar battery module, and a solar battery module group A solar battery cell, solar battery module, and solar battery module group achieving high product value by enabling the display of surface patterns without reducing the power generating efficiency of the solar battery cells are provided. The direction and... | 03/10/1998 |
| 5723354 | Solid state image pickup device and manufacturing method therefor A method for manufacturing a light receiving portion for a solid state image pickup device includes the steps of forming a well of a second impurity type on a substrate of a first impurity type, forming a channel stop within an upper surface of the well, ... | 03/03/1998 |
| 5704992 | Solar cell and method for manufacturing a solar cell A solar cell comprising a substrate on which grooves are formed on the from and back sides thereof. The grooves on the front side are disposed in order to inscribe an angle with respect to the grooves on the back side. The intersection of the grooves on t... | 01/06/1998 |
| 5665607 | Method for producing thin film solar cell In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reach... | 09/09/1997 |
| 5665998 | Geometric enhancement of photodiodes for low dark current operation A substantial portion of the material at the pn junction (27) of the photodiode (37, 41) having an implanted region extending to a surface thereof is selectively removed (39), leaving a very small junction region (35, 43) with the remainder of the p-type ... | 09/09/1997 |
| 5620904 | Methods for forming wraparound electrical contacts on solar cells Methods for forming a wraparound electrical contact on a solar cell require minimal labor and result in high device yields at low cost. A decal having a patterned electrically conductive material is disposed on a first surface of the solar cell. The decal... | 04/15/1997 |
| 5600157 | Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 μm, for adequate sensitivity, and an impurity concentration of at least 5×1020 atoms/cm-3, for a... | 02/04/1997 |
| 5593902 | Method of making photodiodes for low dark current operation having geometric enhancement A substantial portion of the material at the pn junction (27) of the photodiode (37, 41) having an implanted region extending to a surface thereof is selectively removed (39), leaving a very small junction region (35, 43) with the remainder of the p-type ... | 01/14/1997 |
| 5559331 | Split-ring infrared detector A resonant, photoconductive detector for infrared radiation in which a reduced-volume pattern of the photoconductor permits impedance-matching to free space. The photoconductor pattern is a split-ring pattern, typically made of HgCdTe, which is virtually ... | 09/24/1996 |
| 5549763 | Photovoltaic device In a photovoltaic device, when an internal electric field in a photoelectric conversion layer becomes non-uniform in the surface direction of the layer for a reason such as the interface between a transparent conductive film and the photoelectric conversi... | 08/27/1996 |
| 5538564 | Three dimensional amorphous silicon/microcrystalline silicon solar cells Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/μc-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep cont... | 07/23/1996 |
