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| Number | Title | Issue Date |
| 7429496 | Buried photodiode for image sensor with shallow trench isolation technology A buried photodiode with shallow trench isolation technology is formed in a semiconductor substrate of a first conductive type. A trench having a bottom portion and a sidewall portion is formed in the semiconductor substrate. An isolation region is formed on the bot... | 09/30/2008 |
| 7429764 | Signal processing device and image pickup apparatus using the same A signal processing device is provided which is capable of suppressing a voltage change of a power supply when output signals from a plurality of signal sources are read, and capable of outputting a stable signal at a high sensitivity, and an image pickup apparatus ... | 09/30/2008 |
| 7388241 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 06/17/2008 |
| 7378696 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 05/27/2008 |
| 7378697 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 05/27/2008 |
| 7358525 | Quantum dots of group IV semiconductor materials The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free s... | 04/15/2008 |
| 7271462 | Solid-state image sensing device A solid-state image sensing device that is free of kTC noise, can eliminate black smear and dark current, has a larger numerical aperture, and can eliminate the problem of insufficient area of the light-receiving portion. Photodiode PD is formed as the light-receivi... | 09/18/2007 |
| 7199412 | Image sensor with surface regions of different doping A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conducti... | 04/03/2007 |
| 7148528 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 12/12/2006 |
| 7094623 | Method for producing semiconductor nanoparticles and semiconductor nanoparticles produced by the same This invention provides a method for producing semiconductor nanoparticles having a monodispersed distribution of particle sizes and the semiconductor nanoparticles produced by the same, which were insufficient in conventional reversed micelle methods. This method f... | 08/22/2006 |
| 6696313 | Method for aligning quantum dots and semiconductor device fabricated by using the same A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D)... | 02/24/2004 |
| 6661039 | Velocity-cooled hot-electron bolometric mixer/detector A hot-electron bolometric mixer/detector, which uses the nonlinearities of the heated two-dimensional electron gas medium, is described. Electrons in the illustrative embodiment of the present invention are "velocity-cooled" rather than "diffusion-cooled"... | 12/09/2003 |
| 6661073 | Semiconductor infrared detector and method for the production thereof A semiconductor infrared detector includes in the following order: a semiconductor substrate; a layer of electrically insulating material; and patterns formed in a semiconductor layer. The patterns are formed from at least one island that is connected to ... | 12/09/2003 |
| 6653552 | Photoelectric conversion device and method of manufacturing the same There is provided a photoelectric conversion device comprising a lower electrode, numerous crystalline semiconductor particles of one conductivity type deposited on the lower electrode, an insulator interposed among the crystalline semiconductor particles... | 11/25/2003 |
| 6649951 | Light-receiving element and photoelectric conversion device In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type,... | 11/18/2003 |
| 6639293 | Solid-state imaging device A solid-state imaging device such as a CMOS image sensor includes photodiode portions that are designed for both improving sensitivity and reducing crosstalk of electrical charge to adjacent pixels. A p-type layer, which has an impurity concentration that... | 10/28/2003 |
| 6597025 | Light sensitive semiconductor component The invention relates to a light-sensitive semiconductor component that consists of pixels (1), wherein n doped dot zones (7) are provided, in a preferably hexagonal pattern, on the surface of a p doped channel region, the dot zones (7) of a pixel (1) bei... | 07/22/2003 |
| 6590242 | Light-receiving element and photoelectric conversion device In order to reduce the capacitance of a light-receiving element, the present invention provides a light-receiving element comprises a first semiconductor region of the first conductivity type, a second semiconductor region of the second conductivity type,... | 07/08/2003 |
| 6566595 | Solar cell and process of manufacturing the same A solar cell having a p-type semiconductor layer and an n-type semiconductor layer made of a first compound semiconductor material, and a semiconductor layer sandwiched between the p-type semiconductor layer and the n-type semiconductor layer. The semicon... | 05/20/2003 |
| 6548878 | Method for producing a thin distributed photodiode structure A method is shown for producing a distributed PN photodiode having a first active region of the photodiode that can be made arbitrarily thin. A fabrication substrate is doped to have a first conductivity type in order to form the first active region of th... | 04/15/2003 |
| 6528717 | Photovoltaic panel and method of producing same Producing a photovoltaic panel, including forming holes in a first electrode plate, fitting, in the holes, photovoltaic elements, each having a P-N junction between a core and a shell, electrically connecting a first portion of the shell of each photovolt... | 03/04/2003 |
| 6518638 | Photodiode A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength λg. One of the absorption layers is sandwiched between the substrate an... | 02/11/2003 |
| 6489629 | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched us... | 12/03/2002 |
| 6476312 | Radiation concentrator for a photovoltaic device Concentrator for use with photovoltaic devices includes a waveguide (2) incorporating quantum dots. The quantum dots red-shift the incident radiation to produce red-shifted radiation which is internally reflected within the waveguide (2). A photovoltaic d... | 11/05/2002 |
| 6476412 | Light emitting semiconductor device with partial reflection quantum-wave interference layers A semiconductor device is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the sec... | 11/05/2002 |
| 6458619 | Process for producing an isolated planar high speed pin photodiode with improved capacitance A method is shown for producing a PIN photodiode having low parasitic capacitance and wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form th... | 10/01/2002 |
| 6437361 | Semiconductor device and method of using the same A semiconductor device includes a quantum well lamination structure having at least one quantum well layer and at least two barrier layers alternately laminated, the quantum well layer forming a quantum well relative to electron and hole and the barrier l... | 08/20/2002 |
| 6437415 | Photodiode and photodiode module Besides the central pn-junction and the central electrode, a PD chip has a peripheral pn-junction and a peripheral electrode which do not appear on the sides. The ends of the peripheral pn-junction are covered with a protection layer for preventing self-s... | 08/20/2002 |
| 6433399 | Infrared detector device of semiconductor material and manufacturing process thereof An infrared detector device having a PN junction formed by a first semiconductor material region doped with rare earth ions and by a second semiconductor material region of opposite doping type. The detector device comprises a waveguide formed by a projec... | 08/13/2002 |
| 6404029 | Light sensitive element and light sensitive element having internal circuitry A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of ... | 06/11/2002 |
| 6399412 | Photovoltaic panel and method of producing same Producing a photovoltaic panel, including forming holes in a first electrode plate, fitting, in the holes, photovoltaic elements, each having a P-N junction between a core and a shell, electrically connecting a first portion of the shell of each photovolt... | 06/04/2002 |
| 6326649 | Pin photodiode having a wide bandwidth A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region an... | 12/04/2001 |
| 6303967 | Process for producing an isolated planar high speed pin photodiode A method is shown for producing a PIN photodiode using a reduced number of masks wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form the int... | 10/16/2001 |
| 6271546 | Semiconductor photodetector with an increased photo receiving area and exhibiting high speed performances A compound semiconductor multilayer structure includes a plurality of core layers absorbing light and exhibiting a photoelectric transfer; and a plurality of cladding layers, adjacent two of which sandwich each of the core layers so that the core layers a... | 08/07/2001 |
| 6246099 | Photosensitive semiconductor element having an outer layer divided into mutually spaced regions The photosensitive semiconductor element according to the invention comprises a substrate 1, an intermediate layer 2 and an outer layer 5, wherein the intermediate layer 2 is at least partially embedded within the substrate 1 and the outer layer 5 is at l... | 06/12/2001 |
| 6239449 | Quantum dot infrared photodetectors (QDIP) A photodetector capable of normal incidence detection over a broad range of long wavelength light signals to efficiently convert infrared light into electrical signals. It is capable of converting long wavelength light signals into electrical signals with... | 05/29/2001 |
| 6204087 | Fabrication of three-dimensional architecture for solid state radiation detectors A radiation-damage resistant radiation detector with preferably three dimensional collection electrodes may be formed on a substrate that is a semiconductor or an insulator, and may be operated in avalanche mode to increase detection output. A detector co... | 03/20/2001 |
| 6198118 | Distributed photodiode structure A distributed photodiode structure is shown having a plurality of diffusions formed in a uniform pattern on a first surface of a semiconductor substrate and interconnected by a plurality of connective traces. The diffusions are minimum geometry dots for a... | 03/06/2001 |
| 6194702 | Method of forming a complementary active pixel sensor cell The present invention is a complementary active pixel sensor cell and method of making and using the same. The complementary active pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present inventi... | 02/27/2001 |
| 6188056 | Solid state optical imaging pixel with resistive load Disclosed is a CMOS image sensor that includes pixels employing a radiation-sensitive resistive element in which the resistance of the element changes in response to the quantity of radiation striking it. The resistive elements are made from an appropriat... | 02/13/2001 |
