...that when IBM conducted a market study of Chester Carlson's invention in 1959, the company concluded that it would take only 5000 units of his new product to saturate the market? IBM therefore declined to be part of the new product introduction. Too bad for IBM. Carlson's invention was the xerography process, and his new product was the beginning of the Xerox Corporation. It is estimated that every day, worldwide, 3,000,000,000 copies are made!!
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7323356 | LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the st... | 01/29/2008 |
| 7323734 | Phase changeable memory cells A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area... | 01/29/2008 |
| 7288781 | Programmable structure, an array including the structure, and methods of forming the same A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electro... | 10/30/2007 |
| 7112836 | Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be drive... | 09/26/2006 |
| 6660538 | Non-contacting deposition control of chalcopyrite thin films Chalcopyrite semiconductors, such as thin films of copper-indium-diselenide (CuInSe2), copper-gallium-diselenide (CuGaSe2), and Cu(Inx,Ga1-x)Se2, all of which are sometimes generically referred to as ... | 12/09/2003 |
| 6486391 | Diode structure, especially for thin-film solar cells The invention relates to a diode structure, especially for thin film solar cells. The aim of the invention is to provide a diode structure for thin film solar cells. Said structure allows for an assembly of a thin film solar cell, whereby said assembly is... | 11/26/2002 |
| 6441301 | Solar cell and method of manufacturing the same A solar cell with good characteristics and high reliability is provided that includes a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb. A method of manufacturing the same also is provided. The solar cell includes a con... | 08/27/2002 |
| 6368892 | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys Efficient broader spectrum monolithic solar cells are produced by coupling a CIS or CIGS polycrystalline semiconductor to an amorphous silicon semiconductor. Coupling can be accomplished with a n-type conductor, such as cadmium sulfide or microcrystalline... | 04/09/2002 |
| 6307148 | Compound semiconductor solar cell and production method thereof An indium layer and a copper layer, and whenever necessary, a gallium layer or a gallium-alloy layer, are laminated on an electrode film formed on one of the surfaces of a substrate to form a metallic film. The metallic film is then subjected to sulfuriza... | 10/23/2001 |
| 6281036 | Method of fabricating film for solar cells A method of fabricating Cu(Inx Ga1-x)ଲ(Sey S1-y)γ films for solar cells includes forming an electrode on a substrate and supplying the substrate and electrode with Cu, In, Ga, Se, and S to form a C... | 08/28/2001 |
| 6274805 | Solar cell and manufacturing method thereof A solar cell having a semiconductor layer of a chalcopyrite structure as a light absorption layer and using a flexible film as a substrate, breakdown and peeling caused to the semiconductor layer of the chalcopyrite structure due to warp of the flexible f... | 08/14/2001 |
| 6207219 | Method for manufacturing thin-film solar cell A method for manufacturing a thin-film solar cell substrate of group IB, IIIB and VIB elements of the Periodic Table, by using an apparatus for depositing selenium (Se) on the thin-film solar cell substrate. The apparatus has a base with gas inlet and out... | 03/27/2001 |
| 6162296 | Method and apparatus for manufacturing chalcopyrite semiconductor thin films The method and the apparatus of manufacturing the I-III-VI2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the fi... | 12/19/2000 |
| 6153895 | p-type semiconductor, method for manufacturing the p-type semiconductor, semiconductor device, photovoltaic element, and method for manufacturing semiconductor device A p-type semiconductor composed basically of an Ib-IIIb-VIb2 group compound semiconductor (especially CuInS2) which is improved in carrier concentration and has advantages in manufacture and performance. In order to obtain the p-type... | 11/28/2000 |
| 6127202 | Oxide-based method of making compound semiconductor films and making related electronic devices A method for forming a compound film includes the steps of preparing a source material, depositing the source material on a base and forming a preparatory film from the source material, heating the preparatory film in a suitable atmosphere to form a precu... | 10/03/2000 |
| 6121541 | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys Efficient broader spectrum monolithic solar cells are produced by coupling a CIS or CIGS polycrystalline semiconductor to an amorphous silicon semiconductor. Coupling can be accomplished with a n-type conductor, such as cadmium sulfide or microcrystalline... | 09/19/2000 |
| 6117703 | Process and device for producing a CIS-strip solar cell The invention relates to a method of fabricating a strip CIS solar cell and an apparatus for practicing the method. It is the task of the invention to describe a method and an apparatus for providing a technical solution as well as the required layer stru... | 09/12/2000 |
| 6048442 | Method for producing thin-film solar cell and equipment for producing the same A thin-film light absorbing layer which is regulated so as to have any desired gallium concentration and which is capable of attaining a high open-circuit voltage is formed by a simple method at a temperature lower than the softening point of the soda-lim... | 04/11/2000 |
| 6036822 | Thin-film solar cell manufacturing apparatus and manufacturing method A base is provided with a gas outlet pipe and a gas inlet pipe. A bell jar is placed on top of the base with an O-ring interposed between them. Thin-film solar cells and a Se powder are placed in a recess formed in a lower heating jig, and the lower heati... | 03/14/2000 |
| 6023020 | Solar cell and method for manufacturing the same A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconduc... | 02/08/2000 |
| 5985691 | Method of making compound semiconductor films and making related electronic devices A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes ... | 11/16/1999 |
| 5981868 | Thin-film solar cell comprising thin-film light absorbing layer of chalcopyrite multi-element compound semiconductor A solar cell with a heightened open-circuit voltage and improved junction quality of the interface between an interfacial layer (or buffer layer) and a thin-film light absorbing layer is disclosed. A thin-film solar cell is fabricated on a glass substrate... | 11/09/1999 |
| 5935324 | Apparatus and method for forming I-III-VI2 thin-film layers An apparatus for forming I-III-VI2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI2 thin-film layer and a vapor source of an element of group VI of the periodic table are ... | 08/10/1999 |
| 5918111 | Method and apparatus for manufacturing chalcopyrite semiconductor thin films The method and the apparatus of manufacturing the I-III-VI2 type chalcopyrite semiconductor thin films of the present invention control the film composition easily and improve the reproducibility of films by monitoring the composition of the fi... | 06/29/1999 |
| 5910336 | Process for producing light-absorbing chalcopyrite film An improved process for producing a light-absorbing chalcopyrite film is disclosed, which comprises the steps of: applying at least one solution containing at least either of (a) an organic compound of a metal in Group 1B of the periodic table and (b) an ... | 06/08/1999 |
| 5871630 | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a... | 02/16/1999 |
| 5866471 | Method of forming semiconductor thin film and method of fabricating solar cell A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR12)n --, where R1 substituents are selected from the group consisting of hydrogen, an alk... | 02/02/1999 |
| 5858121 | Thin film solar cell and method for manufacturing the same A thin film solar cell having high conversion efficiency is provided. The band gap of the thin film solar cell can be controlled while keeping the quality superior to conventional solar cells. The absorber layer for photovoltaic energy conversion is a Cu(... | 01/12/1999 |
| 5804054 | Preparation of copper indium gallium diselenide films for solar cells High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and sel... | 09/08/1998 |
| 5772431 | Thin-film solar cell manufacturing apparatus and manufacturing method A base is provided with a gas outlet pipe and a gas inlet pipe. A bell jar is placed on top of the base with an O-ring interposed between them. Thin-film solar cells and a Se powder are placed in a recess formed in a lower heating jig, and the lower heati... | 06/30/1998 |
| 5730852 | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and sel... | 03/24/1998 |
| 5731031 | Production of films and powders for semiconductor device applications A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cux Sen, wherein x=1-2 and n=1-3; (2) Cu | 03/24/1998 |
| 5728231 | Precursor for semiconductor thin films and method for producing semiconductor thin films A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are ma... | 03/17/1998 |
| 5725671 | Apparatus for manufacturing chalcopyrite film An apparatus for manufacturing an ABC2 chalcopyrite film (wherein A represents Cu or Ag, B represents In, Ga or Al, C represents S, Se or Te) includes a substrate holder, a substrate heater, a supply source for supplying elements A, B or C onto... | 03/10/1998 |
| 5695627 | Process for producing copper-indium-sulfur-selenium thin film and process for producing copper-indium-sulfur-selenium chalcopyrite crystal A process for producing a copper-indium-sulfur-selenium thin film which comprises subjecting an electro-conductive substrate to an electrodeposition treatment in the presence of copper sulfate, indium sulfate, selenium dioxide, and thiourea. A process for... | 12/09/1997 |
| 5676766 | Solar cell having a chalcopyrite absorber layer A solar cell has a chalcopyrite absorber layer that is applied on the substrate side over an adhesive layer which is chosen from chromium, titanium, tantalum, and titanium nitride.... | 10/14/1997 |
| 5674555 | Process for preparing group Ib-IIIa-VIa semiconducting films Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under... | 10/07/1997 |
| 5633033 | Method for manufacturing chalcopyrite film A method for manufacturing an ABC2 chalcopyrite film (wherein A represents Cu or Ag, B represents In, Ga or Al, C represents S, Se or Te) comprises; a first step of forming a film of a composition of ABC2 containing element A in exce... | 05/27/1997 |
| 5626688 | Solar cell with chalcopyrite absorber layer A substrate-independent manufacturing method for a solar cell with chalcopyrite absorber layer (4, 5) is proposed wherein a desired alkali content is obtained in the finished absorber layer by dosed addition of Na, K, or Li during the manufacturing proces... | 05/06/1997 |
| 5578503 | Rapid process for producing a chalcopyrite semiconductor on a substrate To produce a polycrystalline, single-phase compound semiconductor layer of the chalcopyrite type ABC2, it is proposed to deposit, on a substrate, a layer structure which comprises a plurality of layers and which contains the components in eleme... | 11/26/1996 |