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Method and apparatus for making a drink hop along a bar or counter
A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.
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| Number | Title | Issue Date |
| 7372065 | Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrod... | 05/13/2008 |
| 7288781 | Programmable structure, an array including the structure, and methods of forming the same A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electro... | 10/30/2007 |
| 7132677 | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting ... | 11/07/2006 |
| 6635942 | Semiconductor element, especially a solar cell, and method for the production thereof A semiconductor component (50), in particular a solar cell, which has at least one semiconductor base material (40) consisting of a mono or a polycrystalline structure. The semiconductor base material (40) consists at least in part of pyrite with the chem... | 10/21/2003 |
| 6541695 | High efficiency solar photovoltaic cells produced with inexpensive materials by processes suitable for large volume production A thin film, photovoltaic, solar energy conversion device comprising: a thin-film, photovoltaic layer; a transparent electrical conducting layer in contact with said photovoltaic layer; a back electrical conducting layer in contact with said photovoltaic ... | 04/01/2003 |
| 6534704 | Solar cell A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor l... | 03/18/2003 |
| 6528863 | Perovskite-containing composite material, method of manufacturing said material, electronic component and module A perovskite-containing composite material comprising a substrate, an intermediate layer of a first titanium-containing perovskite and a covering layer of a second perovskite, both the first and the second perovskites being quaternary or higher-substitute... | 03/04/2003 |
| 5895938 | Semiconductor device using semiconductor BCN compounds Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating... | 04/20/1999 |
| 5892227 | Radiation detection system and processes for preparing the same A radiation detection system having a continuous film of a wide band gap semiconductor, radiation-detecting, polycrystalline material formed from a multiplicity of crystalline grains, wherein the grains are sintered together to form a single, coherent, co... | 04/06/1999 |
| 5873901 | Treating retinal damage by implanting thin film optical detectors A method for treating retinal damage by implanting a thin film optical detector based on a dielectric capacitor. When illuminated, the dielectric capacitor generates an electrical field that replaces signals from damaged retinal photoreceptors in the eye.... | 02/23/1999 |
| 5850098 | Uncooled amorphous YBaCuO thin film infrared detector A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelect... | 12/15/1998 |
| 5731031 | Production of films and powders for semiconductor device applications A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cux Sen, wherein x=1-2 and n=1-3; (2) Cu | 03/24/1998 |
| 5641973 | Semiconductor piezoelectric photoelectric converting device and imaging device using such semiconductor photoelectric converting device A semiconductor photoelectric converting device and an imaging device using such semiconductor photoelectric converting devices are provided according to the present invention, the semiconductor photoelectric converting device including an electric charge... | 06/24/1997 |
| 5594263 | Semiconductor device containing a semiconducting crystalline nanoporous material This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a "p" semiconductor contacting an "n" semiconductor. Said device characterized in that at least one of said "p" or "n" semiconductor is a na... | 01/14/1997 |
| 5572060 | Uncooled YBaCuO thin film infrared detector A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelect... | 11/05/1996 |
| 5506426 | Compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin film Chalcopyrite compound semiconductor thin films represented by I-III-VI2-x Vx or I-III-VI2-x VIIx, and semiconductor devices having a I-III-VI2 /I-III-VI2-x Vx or I-III-VI2 | 04/09/1996 |
| 5482570 | Photovoltaic cell The invention relates to a photovoltaic cell (1) comprising a substrate (2) having a support face (4) having a first electrode (6) thereon and a second electrode (10) spaced from the first electrode (6) by a plurality of layers (14, 16; 14, 24, 16) includ... | 01/09/1996 |
| 5422304 | Method for producing a thin film, and a semiconductor device having the thin film Chalcopyrite compound semiconductor thin films represented by I-III-VI2-x Vx or I-III-VI2-x VIIx, and semiconductor devices having a I-III-VI2 /I-III-VI2-x Vx or I-III-VI2 | 06/06/1995 |
| 5371067 | Superconductive photoconductive substance of the Ba-Pb-Bi-O group system and a method for producing the same The disclosed oxide has a general chemical formula of Ba-Pb1-x -Bix -Oz, x being 0.35 to 1 and z being 2.7 to 3, and the oxide shows a potential superconductivity at a temperature below 14K and a photoconductivity at a tem... | 12/06/1994 |
| 5304539 | Method for fabricating integrated microelectronic assembly comprising photoconductor with oxide superconducting leads A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The convert... | 04/19/1994 |
| 5286306 | Thin film photovoltaic cells from I-III-VI-VII compounds A photovoltaic energy conversion device and methods for forming the same with relatively high efficiency, high stability, low cost, low weight, and low toxicity. The device comprises a thin film n/p or n/i/p type, gradient-doped heterojunction which uses ... | 02/15/1994 |
| 5247349 | Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably... | 09/21/1993 |
| 5200805 | Silicon carbide:metal carbide alloy semiconductor and method of making the same A new type of semiconductor material is disclosed which consists of a ଲ-SiC:metal carbide alloy having the general formula Siw (metal 1)x (metal 2)y (metal 3)z C, where w+x+y+z=1 and 1>w>0. The metals are ... | 04/06/1993 |
| 5140001 | Integrated microelectronic assembly comprising photoconductor with superconducting leads A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The convert... | 08/18/1992 |
| 5032472 | Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semicond... | 07/16/1991 |
| 4940898 | Semiconducting metal silicide radiation detectors Semiconducting metal silicide electromagnetic radiation detectors have a thin film of semiconducting metal silicide, such as rhenium disilicide, grown or deposited on a silicon wafer. The detectors are intrinsic semiconductor detectors and can be formed e... | 07/10/1990 |
| 4914042 | Forming a transition metal silicide radiation detector and source Transition metal silicide semiconductor electromagnetic radiation source and detectors have a thin film of semiconducting silicide grown or deposited on a silicon wafer. The transition metals are chosen from a group consisting of iron, iridium, manganese,... | 04/03/1990 |
| 4892594 | Photovoltaic element A photovoltaic element comprises a p-type layer comprising a p-type transition metal oxide, an active layer comprising an amorphous silicon, a n-type layer comprising an amorphous silicon containing a n-type impurity, and an electrode.... | 01/09/1990 |
| 4862236 | HgMnCdTe avalanche photodiode A semiconducting photodiode for detecting light at a predetermined wavelength includes a first semiconducing region having a first conductivity type which is a quaternary alloy of Hg, Mn, Cd, and Te. A second semiconducting region having a second conducti... | 08/29/1989 |
| 4835007 | Method of manufacturing a photoelectric conversion device A method of manufacturing a photoelectric conversion device, comprising: forming a thin film of a substance containing PbO and Cr2 O3 in a vacuum by an electron beam evaporation process using the substance as a target; and subjecting... | 05/30/1989 |
| 4832933 | Metal tetraiodomercurates as infrared detectors A series of chemically synthesized compounds known as metal mercury iodides or metal tetraiodomercurates having use as infrared detectors are made by reacting potassium tetraiodomercurate(II) with monovalent metal nitrates or iodides, such as thallium(I),... | 05/23/1989 |
| 4822581 | Catenated phosphorus materials and their preparation High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semicond... | 04/18/1989 |
| 4818636 | Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semicond... | 04/04/1989 |
| 4782377 | Semiconducting metal silicide radiation detectors and source Semiconducting metal silicide electromagnetic radiation sources and detectors have a thin film of semiconducting metal silicide grown or deposited on a silicon wafer. The metals are chosen from a group consisting of iron, iridium, manganese, chromium, rhe... | 11/01/1988 |
| 4781767 | Photoelectric conversion device A photoelectric conversion device in which a thin crystalline Pb--Cr oxide film is formed on the surface of a substrate and a pair of spaced apart conductive film electrodes are formed on the thin film. The thin crystalline Pb--Cr oxide film is formed by ... | 11/01/1988 |
| 4766087 | Electrical contacts containing thallium (III) oxide prepared at relatively low temperature Electronic semiconductor devices are prepared having contacts forming rectifying and non-rectifying junctions between thallium (III) oxide and semincoductors. Such contacts may be formed at relatively low temperatures during preparation of bipolar, unipol... | 08/23/1988 |
| 4724157 | Method of manufacturing a photoelectric conversion device A method of manufacturing a photoelectric conversion device, comprising: forming a thin film of a substance containing PbO and Cr2 O3 in a vacuum by an electron beam evaporation process using the substance as a target; and subjecting... | 02/09/1988 |
| 4680607 | Photovoltaic cell A photovoltaic cell in accordance with the present invention comprises a transparent substrate, a transparent first electrode layer on the substrate and a first semiconductor layer of P type on the first electrode layer, the first semiconductor layer bein... | 07/14/1987 |
| 4678732 | Method for manufacture of photo-semiconductor A photo-semiconductor is produced by melting Bi2 O3 or its mixture with a small amount of an oxide or fluoride and then quenching the resultant melt in the form of a film.... | 07/07/1987 |
| 4649227 | Photoactive pyrite layer and process for making and using same Photoactive pyrite layers, whose preparation and use represent a commercially highly interesting alternative to materials hitherto in common use. The semiconductor material chiefly used until now, e.g. for solar cells, is silicon. However, its costs of ma... | 03/10/1987 |
