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| Number | Title | Issue Date |
| 7372068 | QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving r... | 05/13/2008 |
| 7332751 | Rear-illuminated-type photodiode array A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, ... | 02/19/2008 |
| 7329895 | Dual wavelength detector A sensor comprises two photodiodes sensitive to different wavelengths. The photodiodes or detectors are stacked in a vertical relationship to each other. A bandpass filter is provided to limit the wavelengths of light reaching the detectors. The photodiodes are form... | 02/12/2008 |
| 7307290 | Compound semiconductor wafer and manufacturing method thereof A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an I... | 12/11/2007 |
| 7307291 | Gallium-nitride based ultraviolet photo detector A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to ... | 12/11/2007 |
| 7154163 | Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers An epitaxial structure of a gallium nitride series semiconductor device and a process of forming the same are described. A first buffer layer of gallium nitride is epitaxially formed on a substrate at a first temperature. A second buffer layer of indium gallium nitr... | 12/26/2006 |
| 6657234 | Nitride semiconductor device An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p... | 12/02/2003 |
| 6624449 | Three terminal edge illuminated epilayer waveguide phototransistor A three terminal edge illuminated epilayer waveguide phototransistor including a subcollector layer formed of an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown ... | 09/23/2003 |
| 6623998 | Method for manufacturing group III nitride compound semiconductor device A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the gr... | 09/23/2003 |
| 6531719 | Group III nitride compound semiconductor device A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat ... | 03/11/2003 |
| 6274882 | Indium-based alloy and an infrared transducer using such an alloy The alloy is for making an infrared transducer. It is constituted by (In1-x Tlx) (As1-y Sby) in which 0ࣘx | 08/14/2001 |
| 6262465 | Highly-doped P-type contact for high-speed, front-side illuminated photodiode A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer.... | 07/17/2001 |
| 6150677 | Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device A semiconductor layer consisting of Ga1-x Inx Ny As1-y and/or GaNy As1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. ... | 11/21/2000 |
| 6137123 | High gain GaN/AlGaN heterojunction phototransistor A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 105. From 360 nm to ... | 10/24/2000 |
| 6054706 | Long wavelength infrared photodetectors The subject invention includes a far-infrared detector based on InSbBix1-x which operates 12 μm at room temperature with an energy band gap as low as 0.13 eV (9.3 μm) at 77K and 12 μm at 300K. The subject invention may be prepared by growing epitaxial ... | 04/25/2000 |
| 6037604 | Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector A InGaSb/GaSb strained-layer superlattices infrared photodetector in which the light-hole and heavy-hole are dispersed by the stress of the lattice mismatch, making the confined energy of the light hole and that of the heavy hole different. The wave funct... | 03/14/2000 |
| 5944913 | High-efficiency solar cell and method for fabrication A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium ga... | 08/31/1999 |
| 5939733 | Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As A compound semiconductor device includes a substrate and a group III-V compound semiconductor layer provided on the substrate, wherein the group III-V compound semiconductor layer contains As as a group V element and Tl as a group III element.... | 08/17/1999 |
| 5937274 | Fabrication method for AlGaIn NPAsSb based devices A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor Ala Gab In1-a-b Nx | 08/10/1999 |
| 5747861 | Wavelength discriminating photodiode for 1.3/1.55 μm lightwave systems The specification describes a discriminating photodiode for detection of 1.55 μm signals used in wavelength multiplexed systems operating with 1.3 μm and 1.55 μm wavelengths. The device uses a semiconductor layered structure to absorb photons from the ... | 05/05/1998 |
| 5483088 | Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0ࣘyࣘ1 A semiconductor layer of In1-x Tlx Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As1-y Py and 0 | 01/09/1996 |
| 5453727 | Semiconductor sensors and method for fabricating the same The present invention is a method of fabrication of a thin film of Inx Ga1-x Asy Sb1-y (0 | 09/26/1995 |
| 5421910 | Intermetallic compound semiconductor thin film An intermetallic compound semiconductor thin film comprises thin film made of the III-V group intermetallic compound InTlSb. Preferably, the thin film is grown by a vapor phase MOCVD method.... | 06/06/1995 |
| 5376185 | Single-junction solar cells with the optimum band gap for terrestrial concentrator applications A single-junction solar cell having the ideal band gap for terrestrial concentrator applications. Computer modeling studies of single-junction solar cells have shown that the presence of absorption bands in the direct spectrum has the effect of "pinning" ... | 12/27/1994 |
| 5322572 | Monolithic tandem solar cell A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on ... | 06/21/1994 |
| 5322573 | InP solar cell with window layer The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or "window" layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front ... | 06/21/1994 |
| 5278435 | High responsivity ultraviolet gallium nitride detector The invention is an Alx Ga1-x N ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal Alx Ga1... | 01/11/1994 |
| 5268327 | Epitaxial compositions A method for manufacturing, by chemical depostion from the vapor phase, epitaxial composites comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium alluminum arsenide (GaAlAs) on single crystal silicon sub... | 12/07/1993 |
| 5210428 | Semiconductor device having shallow quantum well region Carriers are permitted escape from quantum wells within a semiconductor device in the minimum amount of time by utilizing semiconductor material in the barrier layers around the quantum well wherein the barrier layers exhibit an effective bandgap energy l... | 05/11/1993 |
| 5189309 | Avalanche photodiode with AliNAsP cap layer A photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less dependence on the incident light spectral width by using ... | 02/23/1993 |
| 5115294 | Optoelectronic integrated circuit A new MSM photodetector, including a photoabsorbing layer of ternary or quaternary III-V compound semiconductor material, is disclosed. This new photodetector is significant because it exhibits a relatively small dark current and a correspondingly large s... | 05/19/1992 |
| 5053843 | Thermally-stable structure for IMSM photodetectors on GaAs substrates An IMSM photodetector structure comprises a GaAs substrate, a buffer region grown on the substrate, an optically active absorbing layer of In0.42 Ga0.58 As grown on the absorbing layer. The buffer region includes in sequence a first ... | 10/01/1991 |
| 5051804 | Photodetector having high speed and sensitivity The present invention provides a photodetector having an advantageous combination of sensitivity and speed; it has a high sensitivity while retaining high speed. In a preferred embodiment, visible light is detected, but in some embodiments, x-rays can be ... | 09/24/1991 |
| 5019177 | Monolithic tandem solar cell A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell... | 05/28/1991 |
| 4984032 | Semiconductor photodiode An APD includes a substrate formed of n+ -type Alx Ga1-x Sb or Alx Ga1-x Sby As1-y semiconductor, whose aluminum content ratio x is typically within a range from 0.1 to 0.3. A light ... | 01/08/1991 |
| 4970567 | Method and apparatus for detecting infrared radiation A method and apparatus for detecting infrared radiation is disclosed. The apparatus comprises a substrate (12) having readout and signal processing circuits (14) integrated therein. The substrate (12) is formed from a material selected from the group cons... | 11/13/1990 |
| 4906583 | Making a semiconductor photodetector A semiconductor photodetector, such as a PIN photodiode and an avalanche photodiode, comprising an InP substrate, a first InP layer, a GaInAs or GaInAsP light absorbing layer, and a second InP layer. All of the layers are successively grown by a vapor pha... | 03/06/1990 |
| 4807006 | Heterojunction interdigitated schottky barrier photodetector A semiconductor photodetector is formed of interdigitated, metal-semiconductor-metal electrodes disposed on a surface of semi-insulating semiconductor material, gallium arsenide. Radiation such as infra-red or visible light is converted to an electric cur... | 02/21/1989 |
| 4803537 | Infrared detector system based upon group III-V epitaxial material The disclosure relates to a detector of infrared radiation which employs Group III-V compound semiconductor technology and includes a conductive substrate, of a material such as GaAs. Upon this substrate is deposited a lattice structure, including thin al... | 02/07/1989 |
| 4667059 | Current and lattice matched tandem solar cell A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Gax In1-x P (0.505ࣘXࣘ0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, prefera... | 05/19/1987 |
