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| Number | Title | Issue Date |
| 6610141 | Zinc oxide films containing p-type dopant and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con... | 08/26/2003 |
| 6043548 | Semiconductor device with stabilized junction Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula Hgx Cd1-x Te where x=0.2 to 0.5 and n- or p-ty... | 03/28/2000 |
| 5909632 | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selecte... | 06/01/1999 |
| 5535699 | Method of making II-VI semiconductor infrared light detector A method for producing a photo-voltaic infrared detector including growing a crystalline CdHgTe layer on a CdTe substrate by liquid phase epitaxy using a growth melt including tellurium as a solvent to which indium is added as a dopant impurity in a conce... | 07/16/1996 |
| 5446286 | Ultra-fast detectors using doped nanocrystal insulators An efficient and ultrafast sensor for X-ray and UV radiation based on doped nanocrystals. These doped nanocrystals consist preferably of impurity-activator doped wide band gap II-VI semiconductors. They yield high efficiency and short recombination time r... | 08/29/1995 |
| 5412242 | Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula Hgx Cd1-x Te and especially using Hg0.3 | 05/02/1995 |
| 5261968 | Photovoltaic cell and method An improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick CdS layer, a... | 11/16/1993 |
| 5234842 | Method of producing p-typed CdS A method of producing a p-type CdS wherein oxygen is doped into a CdS layer at a concentration in a range between 1016 and 1019 atomic/cm3.... | 08/10/1993 |
| 5150191 | P-type II-VI compound semiconductor doped An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semi... | 09/22/1992 |
| 5008726 | PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semicon... | 04/16/1991 |
| 4959106 | Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of ... | 09/25/1990 |
| 4950615 | Method and making group IIB metal - telluride films and solar cells A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cdx Zn1-x Te (0ࣘxࣘ1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a su... | 08/21/1990 |
| 4926229 | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semicon... | 05/15/1990 |
| 4920394 | Photo-sensing device with S-shaped response curve When a photocurrent is detected by irradiating a main light reflected on a manuscript and a biasing light, on a photo-sensing device, the material of the photo-sensing device of the present invention has a response characteristic of a photocurrent to time... | 04/24/1990 |
| 4916303 | Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation An electron beam controlled semiconductor switch is capable of carrying large currents without being restricted by the space charge limited current condition. The switch includes a block of semiconductor material having ohmic contacts connectable to first... | 04/10/1990 |
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconduct... | 12/19/1989 |
| 4851302 | Functional ZnSe:H deposited films There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is ... | 07/25/1989 |
| 4831248 | Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation An electron beam controlled semiconductor switch is capable of carrying large currents without being restricted by the space charge limited current condition. The switch includes a block of semiconductor material having ohmic contacts connectable to first... | 05/16/1989 |
| 4825061 | Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction A light activated semiconductor switch is capable of carrying large currents without requiring continuous illumination of the semiconductor to sustain conduction. The switch includes a block of semiconductor material having ohmic contacts connectable to f... | 04/25/1989 |
| 4495375 | MIS or SIS Solar cells The function of the insulating film in MIS and SIS solar cells can also be fulfilled by a semiconductor with a sufficiently large energy gap. The doping of the quasi insulating layer guarantees good fill factors and short-circuit current densities also at... | 01/22/1985 |
| 4229237 | Method of fabrication of semiconductor components having optoelectronic conversion properties The top surface of a wafer of p-type ZnTe semiconductor material is subjected to double diffusion of an acceptor impurity and of a donor impurity so as to create in the ZnTe on the one hand a compensated region having high resistivity and on the other han... | 10/21/1980 |
| 4105479 | Preparation of halogen doped mercury cadmium telluride Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclos... | 08/08/1978 |
| 4105472 | Preparation of silicon doped mercury cadmium telluride Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 08/08/1978 |
| 4089714 | Doping mercury cadmium telluride with aluminum or silicon A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a tempe... | 05/16/1978 |
| 4087294 | Lithium doped mercury cadmium telluride Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury... | 05/02/1978 |
| 4087293 | Silicon as donor dopant in Hg1-x Cdx Te Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 05/02/1978 |
| 4086106 | Halogen-doped Hg,Cd,Te Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclos... | 04/25/1978 |
