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| Number | Title | Issue Date |
| 6362483 | Visible-blind UV detectors Visible-blind UV detectors are disclosed comprising an active layer of ZnSTe alloy. The Te composition can be varied to provide good lattice matching depending on the nature of the substrate (eg Si, GaP or GaAs) and a novel structure is provided to give h... | 03/26/2002 |
| 5229321 | Method of diffusing mercury into a crystalline semiconductor material including mercury A method of diffusing mercury into a crystalline compound semiconductor film including mercury includes forming an amalgam on a region of the semiconductor film into which mercury is to be diffused, forminq a protective film on the amalgam, and annealing,... | 07/20/1993 |
| 4972244 | Photodiode and photodiode array on a II-VI material and processes for the production thereof Photodiode and array of photodiodes on II-VI material and their production processes. The photodiodes (48) are formed in a type P, Hg1-x Cdx Te semiconductor layer (13) with 0ࣘxࣘ1 deposited directly on a CdTe insulating substrate... | 11/20/1990 |
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconduct... | 12/19/1989 |
| 4828876 | Production of photoelectric conversion film and contact type image sensor A process for preparing a photoelectric conversion film containing one or more compound semiconductor made from Cd and group Vi element comprises coating a paste containing (a) a photoelectric conversion material, (b) a dopant, (c) a flux, (d) an organic ... | 05/09/1989 |
| 4751149 | Chemical vapor deposition of zinc oxide films and products Zinc oxide is applied to a substrate at a low temperature by using a mixture of an organozinc compound and water carried in an inert gas. The resulting zinc oxide film has a relatively low resistivity which can be varied by addition of a group III element... | 06/14/1988 |
| 4568792 | Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts A photovoltaic cell includes doped cadmium telluride formed of tetrahedral crystalline host semiconductor material including cadmium and telluride atoms bonded by ionic, covalent, and metallic forces. The host material is alloyed with Group II or VI atoms... | 02/04/1986 |
| 4445965 | Method for making thin film cadmium telluride and related semiconductors for solar cells A thin cadmium-telluride semiconductor film for use in solar cells is grown epitaxially on a second semiconductor film, typically tellurium, which may be epitaxial on a substrate semiconductor, typically single-crystal cadmium-telluride. The second semico... | 05/01/1984 |
| 4295148 | Method of fabrication of electroluminescent and photodetecting diodes A layer of thickness xj is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thicknes... | 10/13/1981 |
