Class 257/E31.005 - In different semiconductor regions (e.g., Cu 2 X/CdX heterojunction and X being Group VI element) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E31.004. This subclass
No. of patents: 2
Last issue date: 01/22/2008

Number	Title	Issue Date
7321157	CoSb-based thermoelectric device fabrication method A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buf...	01/22/2008
4398055	Radiant energy converter having sputtered CdSiAs₂ absorber Thin film radiant energy converter having a sputtered CdSiAs2 photovoltaic absorber layer and a thermally evaporated CdS top layer. The sputtering technique with multiple targets (Cd, Si, As) is used to obtain stoichiometric CdSiAs2 ...	08/09/1983

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