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| Number | Title | Issue Date |
| 7432571 | Multi-scale cantilever structures having nano sized holes and method of preparing the same Provided are a multi-scale cantilever structure having nano-sized holes prepared by anodic oxidation and a method of preparing the same. The multi-scale cantilever structure is prepared using anodic oxidation and electro-polishing so that a manufacturing process is ... | 10/07/2008 |
| 7425491 | Nanowire transistor with surrounding gate One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment of the method, a pillar of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy process is performed to crys... | 09/16/2008 |
| 7424136 | Finger sensing with enhanced mounting and associated methods A finger sensor may include a finger sensing integrated circuit (IC) having a finger sensing area, an IC carrier having a cavity receiving the finger sensing IC therein and having at least one beveled upper edge, and a frame surrounding at least a portion of an uppe... | 09/09/2008 |
| 7422922 | Photoelectric conversion element and process for fabricating the same, electronic device and process for fabricating the same In a photoelectric conversion device using a semiconductor electrode composed of semiconductor nanoparticles, the semiconductor electrode is made by coating and drying a paste containing a binder and semiconductor nanoparticles dispersed therein on a transparent con... | 09/09/2008 |
| 7420205 | Electronic device including a guest material within a layer and a process for forming the same An electronic device made by a process that includes forming a first layer over a substrate and placing a first liquid composition over a first portion of the first layer. The first liquid composition includes at least a first guest material and a first liquid mediu... | 09/02/2008 |
| 7413919 | Method of manufacturing a structural health monitoring layer Methods of manufacturing a diagnostic layer containing an array of sensing elements. The sensing elements, associated wires, and any accompanying circuit elements, are incorporated various layers of a thin, flexible substrate. This substrate can then be affixed to a... | 08/19/2008 |
| 7400023 | Photoelectric converting film stack type solid-state image pickup device and method of producing the same In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched... | 07/15/2008 |
| 7393715 | Manufacturing method for image pickup apparatus In an image pickup device, a step of forming an embedded plug includes a step of forming a connecting hole in the insulation film in which the embedded plug is to be formed, a metal layer deposition step of depositing a metal layer on the insulation film in which th... | 07/01/2008 |
| 7378293 | MEMS fabrication method A method for singulating a substrate such as a semiconductor wafer populated with a plurality of MEMS devices. A preferred embodiment of the present invention comprises mounting a glass cover onto the wafer, then orienting the wafer and removably mounting it on an a... | 05/27/2008 |
| 7358527 | Systems and methods for testing germanium devices Systems and methods are disclosed for a test device that is configured to allow assessment of the quality of germanium devices. In one embodiment, the test device is formed on the same substrate as the germanium devices, and includes a plurality of germanium compone... | 04/15/2008 |
| 7335546 | Method and device for CMOS image sensing with separate source formation A method and device for image sensing. The method includes forming a first well and a second well in a substrate, forming a gate oxide layer on the substrate, and depositing a first gate region and a second gate region on the gate oxide layer. The first gate region ... | 02/26/2008 |
| 7323256 | Large area, uniformly low dislocation density GaN substrate and process for making the same Large area, uniformly low dislocation density single crystal III-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm2, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm−2, and a ... | 01/29/2008 |
| 7301215 | Photovoltaic device A photovoltaic device includes at least a first electrode, a first-conductivity-type layer composed of non-single-crystalline silicon, a second-conductivity-type layer composed of polycrystalline silicon, a third-conductivity-type layer composed of non-single-crysta... | 11/27/2007 |
| 7294523 | Method for fabricating CMOS image sensor In a method for fabricating a CMOS image sensor, microlenses are formed with a silicon nitride layer formed on a pad such that it is possible to decrease a height of microlens and to improve a refraction ratio. In addition to main lenses in shape of curved surface, ... | 11/13/2007 |
| 7282777 | Interband cascade detectors A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are c... | 10/16/2007 |
| 7244632 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color fi... | 07/17/2007 |
| 7242069 | Thin wafer detectors with improved radiation damage and crosstalk characteristics The present invention provides for reduced radiation damage susceptibility, decreased affects of crosstalk, and increased flexibility in application. In one embodiment, the present invention includes a back side illuminated photodiode array with a back side etching ... | 07/10/2007 |
| 7223625 | CMOS image sensor and method for fabricating the same A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The CMOS image sensor a plurality of photosensitive devices formed on a semiconductor substrate, an interlayer dielectric formed on the photosensitive ... | 05/29/2007 |
| 7205585 | Organic photosensitive optoelectronic device with an exciton blocking layer An organic photosensitive optoelectronic device having a plurality of cells disposed between a first electrode and a second electrode. Each cell includes a photoconductive organic hole transport layer adjacent to a photoconductive organic electron transport layer. A... | 04/17/2007 |
| 7187049 | Data download to imager chip using image sensor as a receptor An imaging device having a CMOS photosensor array for capturing images is described in which the array is also used to input programming and/or data used to control the imaging operations. The data-input can be based upon variations in light color, value, intensity,... | 03/06/2007 |
| 7176048 | Optically coupled sealed-cavity resonator and process A process to form a laterally offset photodiode for an optically coupled resonator includes implanting a semiconductor substrate to form the laterally offset photodiode adjacent to the resonator. The resonator masks the implanting underneath the resonator when the s... | 02/13/2007 |
| 7141516 | High frequency plasma generator and high frequency plasma generating method An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground ... | 11/28/2006 |
| 7115963 | Circuitry for image sensors with avalanche photodiodes In-pixel circuit architectures for CMOS image sensors are disclosed, which are suitable for avalanche photo-diodes operating either in linear or in non-linear mode. These architectures apply in particular to photo-diodes and image sensors in which CMOS devices are f... | 10/03/2006 |
| 7112457 | Method of manufacturing an opto-coupler A method of manufacturing an opto-coupler includes disposing an insulating layer on a first die and disposing an isolation layer on the insulating layer. The method further includes disposing a securing layer on the isolation layer and disposing a second die on the ... | 09/26/2006 |
| 6194721 | Uncooled far infrared thermal imaging system An infrared image is directed onto a transducer having a planar array of absorbing discs, on one side. The discs are supported by a thin membrane which sags or bulges as the discs heat up. The discs thus change their spacings with respect to a partially r... | 02/27/2001 |
| 5559358 | Opto-electro-mechanical device or filter, process for making, and sensors made therefrom The present invention relates to microstructures fabricated from semiconductor material and having a flexible member which is excited into various modes of resonance and in which such resonance is read optically. By coupling the microstructure to a surfac... | 09/24/1996 |
| 5045158 | Electrically conductive water/oil microemulsions of the water-in-oil type based on perfluorinated compounds and used as a catholyte in electrochemical processes An electrochemical process, in which a gaseous matter is reduced at the cathode and in which microemulsions of the water-in-oil (w/o) type are utilized as catholytes, the microemulsions having ionic electric transfer and matter interphase transfer capacit... | 09/03/1991 |
| 4199777 | Semiconductor device and a method of manufacturing the same A semiconductor device includes at least two different elements having different functions. At least one of the elements is fixed within a recess provided in a substrate, and wirings are provided on an insulating film deposited commonly on the elements an... | 04/22/1980 |
