Class 257/E29.345 - Metal-insulator-semiconductor (e.g., MOS capacitor) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.342. This subclass
No. of patents: 213
Last issue date: 08/26/2008

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Number	Title	Issue Date
7417277	Semiconductor integrated circuit and method of manufacturing the same Conventional capacitors constituted of a FET incur degradation in frequency response. A semiconductor integrated circuit includes a semiconductor substrate, an N-type FET, a P-type FET, and capacitors. The N-type FET includes N-type impurity diffusion layers, a P-ty...	08/26/2008
7339238	Semiconductor device including a capacitance It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (165), a buried oxide film (166) and an SOI layer (171), an isolating oxide film 167 (1...	03/04/2008
7301217	Decoupling capacitor design A thin-dielectric unit capacitor is disclosed having a first node coupled to a first circuit connection point and a second node coupled to a second circuit connection point. It further contains a first and second thin-dielectric capacitors connected in series betwee...	11/27/2007
7262091	Methods of fabricating MIM capacitors Methods of fabricating MIM capacitors are provided. One example method includes forming an insulating layer including a void on a semiconductor substrate, forming a first hole connected to the void by patterning the insulating layer, forming a lower electrode by for...	08/28/2007
7244999	Capacitor applicable to a device requiring large capacitance A capacitor includes a first electrode and a second electrode arranged so that a main surface of the first electrode opposes a main surface of the second electrode, a first pseudo electrode layer disposed on the main surface of the first electrode, and a dielectric ...	07/17/2007
7227211	Decoupling capacitors and semiconductor integrated circuit VSS 302 is provided to a gate portion 304 and VDD 301 is provided to a source portion 305 and a drain portion 306 of a MOS transistor which constitutes a decoupling capacitor, and a potential NWVDD 303 different from that pr...	06/05/2007
7176529	Semiconductor device and method of manufacturing the same A semiconductor device includes a semiconductor substrate having a resistivity of at least 30 Ω·cm, a first MISFET formed on the semiconductor substrate to function as a protective element, and a second MISFET protected by the first MISFET. ...	02/13/2007
7176515	Semiconductor device including insulated gate type transistor and insulated gate type capacitance having protruded portions It is an object to obtain a semiconductor device having such a structure that respective electrical characteristics of an insulated gate type transistor and an insulated gate type capacitance are not deteriorated and a method of manufacturing the semiconductor devic...	02/13/2007
7157765	Semiconductor device including insulated gate type transistor with pocket regions and insulated gate type capacitor with no region of reverse conductivity type It is an object to obtain a semiconductor device having such a structure that respective electrical characteristics of an insulated gate type transistor and an insulated gate type capacitance are not deteriorated and a method of manufacturing the semiconductor devic...	01/02/2007
7126205	Devices having improved capacitance and methods of their fabrication A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate. ...	10/24/2006
7091548	Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and at least three high-k dielectric layers interposed between the lower...	08/15/2006
6700149	Circuit configuration for forming a MOS capacitor with a lower voltage dependence and a lower area requirement A circuit configuration for providing a capacitance includes short-channel MOS transistors that are reverse-connected in series or in parallel, and that have the same channel type. When the short-channel MOS transistors are operated exclusively in the dep...	03/02/2004
6700771	Decoupling capacitor for high frequency noise immunity Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the...	03/02/2004
6696719	Semiconductor device with improved peripheral resistance element and method for fabricating same A semiconductor device in which a cell capacitor with an MIM or MIS structure is formed using a conductive material with a low resistivity for the upper electrode and a resistance element is formed using a conductive material with high resistance without ...	02/24/2004
6674116	Variable capacitor using MOS gated diode with multiple segments to limit DC current A voltage-variable capacitor uses the channel-to-substrate junction from a gated diode formed from a metal-oxide-semiconductor transistor. The transistor gate has at least two contacts that are biased to different voltages. The gate acts as a resistor wit...	01/06/2004
6670236	Semiconductor device having capacitance element and method of producing the same To shorten the production process of the semiconductor device having the capacitance element. The pad oxide film (2) and the first polycrystalline silicon layer (3) are used as a stress buffering material at the time of formation of the element separation...	12/30/2003
6667207	High-dielectric constant insulators for FEOL capacitors Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the cap...	12/23/2003
6667203	Method of fabricating a MOS capacitor A method of fabricating a MOS capacitor in a complementary MOS fabrication process with dual-doped poly gates comprises providing a substrate of a first conductive type, the substrate having a first well of the first conductive type and a second well of a...	12/23/2003
6667539	Method to increase the tuning voltage range of MOS varactors A varactor circuit having an increased tuning range comprises a first varactor in series with a second varactor between first and second terminals. A resistor is connected between the first and second terminals. A tap of the resistor is connected to a jun...	12/23/2003
6653716	Varactor and method of forming a varactor with an increased linear tuning range The linear tuning range of a semiconductor varactor is substantially increased by forming a lightly-doped drain region of a first conductivity type in a semiconductor material of a second conductivity type between a heavily-doped diffusion of the second c...	11/25/2003
6649958	Semiconductor device with MIS capacitors sharing dielectric film A semiconductor device having an MIS capacitor having a low capacitance value and an MIS capacitor having a high capacitance value, and to a manufacturing method thereof. One MIS capacitor consists of a lower conductive material region formed on the subst...	11/18/2003
6646321	Power transistor with internally combined low-pass and band-pass matching stages RF power transistor provided with an internal shunt inductor, characterized in that the shunt is produced in two separated, capacitors (Cb, Cp), each internally bonded to the transistor internal active die (AD) through internal leads (Li, Ld1), one of whi...	11/11/2003
6627954	Integrated circuit capacitor in a silicon-on-insulator integrated circuit An integrated circuit capacitor includes a silicon-on-insulator (SOI) substrate and a doped epitaxial layer of a first conductivity type formed on the SOI substrate. The doped epitaxial layer is used as a first plate of the integrated circuit capacitor. A...	09/30/2003
6621128	Method of fabricating a MOS capacitor A method of fabricating a MOS capacitor in a complementary MOS fabrication process with dual-doped poly gates comprises providing a substrate of a first conductive type, the substrate having a first well of the first conductive type and a second well of a...	09/16/2003
6621111	Capacitor structure of semiconductor device and method for forming the same A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper center of the active region to expose an edge of the active...	09/16/2003
6617221	Method of making capacitors A method for manufacturing capacitors is disclosed. The method is applicable to a capacitor whose upper electrode area is smaller than the lower electrode area. It is featured in that a material, such as a TiN hard mask, is inserted between the convention...	09/09/2003
6608365	Low leakage PMOS on-chip decoupling capacitor cells compatible with standard CMOS cells An on-chip decoupling capacitor cell is disclosed that is compatible with standard CMOS cells. A cell boundary defining the area of the cell includes a first transistor area and a second transistor area. A PMOS transistor having an n-well is formed within...	08/19/2003
6608747	Variable-capacitance device and voltage-controlled oscillator A variable-capacitance device includes first and second variable-capacitance elements which are connected in parallel to each other. Each of the first and variable-capacitance elements include gate, source and drain regions and operates in response to a c...	08/19/2003
6603160	MOS capacitor, liquid crystal display, integrated circuit and method of manufacture thereof A MOS capacitor used in an active matrix liquid crystal display is manufactured by a process comprising the steps of forming capacitor electrodes with a dielectric layer between them in a semiconductor layer, forming a p+ diffused region and an n+ diffuse...	08/05/2003
6590247	MOS capacitor with wide voltage and frequency operating ranges A MOS capacitor comprises a semiconductor substrate, a first well region of a first conductivity type formed in the substrate, at least one doped region formed in the first well region, and an insulated gate layer insulatively disposed over a surface of t...	07/08/2003
6587326	High-Q, variable capacitance capacitor High-Q, variable capacitance capacitor is formed by including a pocket of semiconductor material; a field insulating layer, covering the pocket; an opening in the field insulating layer, delimiting a first active area; an access region formed in the activ...	07/01/2003
6583492	Capacitor element having a contact hole structure in an electrode structure A semiconductor device comprising a first electrode and a second electrode that are formed in this order on a semiconductor substrate with an insulating layer interposed between the first and second electrodes. A contact hole is provided for connecting th...	06/24/2003
6573588	Capacitance element A P well region formed on a buried N well region and a n+ active region that are connected each other through a lead wire, serve as one terminal T1, and a gate electrode and a buried N well region that are connected each other through a leading N well reg...	06/03/2003
6563153	Electrically tunable device and a method relating thereto A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buff...	05/13/2003
6559518	MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device An MOS heterostructure includes: a single crystal silicon substrate; an insulating film formed on the substrate; and a conductive film formed on the insulating film. The substrate includes a plurality of terraces and steps, which have been formed as a res...	05/06/2003
6551896	Capacitor for analog circuit, and manufacturing method thereof Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the ...	04/22/2003
6551873	Method for forming a tantalum oxide capacitor A method for forming capacitor using a tantalum oxide (TaO5) layer is disclosed. Tantalum oxide is deposited by an atomic layer deposition ALD process so that the step-coverage of the tantalum oxide layer is improved, and accordingly the electr...	04/22/2003
6551895	Metal oxide semiconductor capacitor utilizing dummy lithographic patterns A semiconductor structure (and method for manufacturing the same) comprises an active array of first elements having a first manufacturing precision, a peripheral region surrounding the active array, the peripheral region including second elements having ...	04/22/2003
6541814	MOS variable capacitor with controlled dC/dV and voltage drop across W of gate A voltage-variable capacitor is constructed from a metal-oxide-semiconductor transistor. The transistor source has at least two contacts that are biased to different voltages. The source acts as a resistor with current flowing from an upper source contact...	04/01/2003
6521939	High performance integrated varactor on silicon A new MOS varactor device is described. A bottom electrode comprises a plurality of diffusion junctions in a semiconductor substrate. The semiconductor substrate may be n-type or p-type. The diffusion junctions are arranged in a two-dimensional array. The...	02/18/2003

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Class 257/E29.345 - Metal-insulator-semiconductor (e.g., MOS capacitor) (EPO)