Class 257/E29.317 - With Schottky gate (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.31. This subclass
No. of patents: 264
Last issue date: 01/29/2008

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Number	Title	Issue Date
7323376	Method for fabricating a semiconductor device including a group III nitride semiconductor A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Gro...	01/29/2008
7307314	LDMOS transistor with improved gate shield A LDMOS transistor having a gate shield provides reduced drain coupling to the gate shield and source by restricting the thickness of the gate shield and by confining a source contact to the source region without overlap of the gate. ...	12/11/2007
6703649	Semiconductor element A semiconductor element includes a conductive SiC base having a resistivity of less than 1×105 Ωcm, an underlayer made of a semiconductor nitride including at least Al element which is formed on the SiC base, and a semiconductor nitride layer...	03/09/2004
6703678	Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, where the thickness of the dielectric layer between the channel layer and the field plate, the distance between the ...	03/09/2004
6700157	Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an...	03/02/2004
6690035	Semiconductor device having an active region of alternating layers An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) t...	02/10/2004
6686616	Silicon carbide metal-semiconductor field effect transistors SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two re...	02/03/2004
6656823	Semiconductor device with schottky contact and method for forming the same Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as Alx Ga1-x N and Inx Ga1-x N. At least one metal layer includ...	12/02/2003
6653668	Radio frequency modules and modules for moving target detection It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effe...	11/25/2003
6630382	Current controlled field effect transistor Various emdodiments include a transistor device that is controlled by a gate current and that exhibits low power consumption as well as high speed characteristics. In various embodiments, an enhancement mode MESFET device exhibits channel drain current th...	10/07/2003
6627948	Vertical layer type semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an...	09/30/2003
6617660	Field effect transistor semiconductor and method for manufacturing the same This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof. The field effect transistor ...	09/09/2003
6576927	Semiconductor device and GaN-based field effect transistor for use in the same The present invention provides a semiconductor device as an FET integrated object having a small effective area, a small ON resistance during operation, a high voltage resistance, and capable of large-current drive. This device comprises one or more FET's...	06/10/2003
6563150	High frequency field effect transistor A traveling wave FET in which increasing distances between electrodes and the design of semiconductor regions associated with the various electrodes act to increase maximum gain parameters of the device. The relationship of the electrode series resistance...	05/13/2003
6559513	Field-plate MESFET A planar MESFET transistor includes a plurality of FET elements. Each FET element includes a doped planar channel, and source and drain coupled to the ends of the channel. A gate conductor extends over a portion of the channel at a location lying between ...	05/06/2003
6545340	Semiconductor device A semiconductor device of the invention in the form of a superlattice-heterojunction bipolar transistor (SL-HBT) 10 incorporates a superlattice region 16 within an emitter mesa 21. The superlattice region 16 provides a non-linear response to a sufficientl...	04/08/2003
6507051	Semiconductor integrated circuit device A semiconductor device includes a semiconductor layer structure, and gate, drain and source electrodes provided on the semiconductor layer structure, the gate electrode being located between the drain and source electrodes. A depletion modulating part is ...	01/14/2003
6507047	Power transistors for radio frequencies A field effect transistor is made on a chip comprising a SiC-substrate. The transistor includes a plurality of densely stacked parallel transistor cells occupying totally a rectangular area. Each transistor cell has parallel strip-shaped regions forming t...	01/14/2003
6504190	FET whose source electrode overhangs gate electrode and its manufacture method A gate electrode is in Schottky contact with the surface of a semiconductor substrate and extends in a first direction. A drain electrode is disposed on one side of the gate electrode, spaced apart from the gate electrode by some distance, and is in ohmic...	01/07/2003
6501105	Compound semiconductor device There is provided a compound semiconductor device having a MESFET whic comprises a channel layer made of Inx Ga1-x Py Sb1-y (where 0.3	12/31/2002
6483134	Integrated circuits with immunity to single event effects The present invention is an electronic structure having a buffer layer with a short average carrier lifetime, at least about 1000 Å thick with an upper face, and an integrated circuit disposed over the upper face of the buffer layer, where this integrate...	11/19/2002
6479842	Field effect transistor with a quantum-wave interference layer A field effect transistor having a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W, and the quantum-wave interference layer is formed in a ...	11/12/2002
6476431	Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same A p-type layer and an n-type layer which constitute a barrier layer are provided, and a leak of the holes at the time of the negative bias accompanying the p-type layer buffer required for the higher tolerance voltage is suppressed, and the discharge of t...	11/05/2002
6469326	Radio frequency modules and modules for moving target detection It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effe...	10/22/2002
6441391	Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate An object of the present invention is to improve, in a group III nitride semiconductor device, the productivity, heat radiation characteristic and performance in the element high speed operation; upon a sapphire substrate in which an A plane (an (11-20) p...	08/27/2002
6429471	Compound semiconductor field effect transistor and method for the fabrication thereof Disclosed is a compound semiconductor field effect transistor. The compound semiconductor field effect transistor has a charge absorption layer and a semiconductor laminated structure. The charge absorption layer includes a compound semiconductor layer of...	08/06/2002
6420775	Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression A compound semiconductor device having improved backgate voltage resistance characteristics. To improve the backgate voltage resistance of a compound semiconductor device having field effect transistors on a main surface of a semi-insulating substrate, bo...	07/16/2002
6392278	Fet having a reliable gate electrode A comb-shape MESFET has a gate electrode having a plurality of gate fingers coupled to a gate bar at the proximal ends of the gate fingers. The distal end of each gate finger is formed as a large width end on the inactive region of the wafer. The large wi...	05/21/2002
6373082	Compound semiconductor field effect transistor A compound semiconductor field effect transistor having, between a gate electrode and a drain electrode, a non-gate region which is the channel region not covered by the gate electrode, wherein a plurality of isolation regions are formed in the non-gate r...	04/16/2002
6339005	Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET A silicon on insulator transistor is disclosed which has a Schottky contact to the body. The Schottky contact may be formed on the source and/or drain side of the gate conductor. A spacer, with at least a part thereof being disposable, is formed on the si...	01/15/2002
6333523	Field-effect transistor The present invention relates to a field-effect transistor which is improved such that the linearity of mutual conductance gm is flattened over a wider range of gate bias. This field-effect transistor is a MESFET comprising a channel layer and ...	12/25/2001
6329230	High-speed compound semiconductor device having an improved gate structure A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provi...	12/11/2001
6313512	Low source inductance compact FET topology for power amplifiers A field effect transistor (FET) comprising a plurality of drain finger electrodes, source finger electrodes and gate finger electrodes disposed in an active region of a semiconductor substrate; a drain bus disposed outside the active region and electrical...	11/06/2001
6285046	Controllable semiconductor structure with improved switching properties The invention concerns a controllable semiconductor structure comprising a base region (101, 201, 301, 401), a source region (106, 212, 312, 412) and a drain region (107, 213, 313, 413) a conductive duct being provided in the base region between the sourc...	09/04/2001
6235617	Semiconductor device and its manufacturing method It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric condu...	05/22/2001
6222266	Miniaturization of a semiconductor chip A source electrode, gate electrode, drain electrode, and a gate bus bar connected to said gate electrode are formed on a semiconductor chip. A field effect transistor unit constructed on the semiconductor chip is made up of three adjacent fingers each ext...	04/24/2001
6200838	Compound semiconductor device and method of manufacturing the same In a compound semiconductor device constituting a field effect transistor having a buried p region 3, a channel region 4 is formed thin and highly doped by n-type impurity, and the buried p region 3 is formed shallowly and highly doped by p-type impurity ...	03/13/2001
6150680	Field effect semiconductor device having dipole barrier A field effect semiconductor device including a substrate, a dipole barrier formed on the substrate, a channel layer formed on the dipole barrier, and source, gate and drain electrodes formed on the channel layer. The dipole barrier provides a potential b...	11/21/2000
6127695	Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor A lateral field effect transistor of SiC for high switching frequencies comprises a source region layer (5) and a drain region layer (6) laterally spaced and highly doped n-type, an n-type channel layer (4) extending laterally and interconnecting the sour...	10/03/2000
6111273	Semiconductor device and its manufacturing method It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric condu...	08/29/2000

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Class 257/E29.317 - With Schottky gate (EPO)