Class 257/E29.301 - Programmable by two single electrons (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.3. This subclass
No. of patents: 62
Last issue date: 08/05/2008

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Number	Title	Issue Date
7408235	Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wa...	08/05/2008
7391073	Non-volatile memory structure and method of fabricating non-volatile memory A method of fabricating a non-volatile memory is described. A substrate having a tunneling layer and a floating gate layer thereon is provided. A mask layer is formed on the floating gate. The mask layer has openings that expose a portion of the floating gate layer....	06/24/2008
7323743	Floating gate A floating gate and fabrication method thereof. A semiconductor substrate is provided, on which an oxide layer, a first conducting layer, and a patterned hard mask layer having an opening are sequentially formed. A spacer is formed on the sidewall of the opening. A ...	01/29/2008
6674117	Semiconductor element and semiconductor memory device using the same A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance...	01/06/2004
6670670	Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same A single electron memory device including quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same, wherein the single electron memory device includes a substrate on which a nano-scale channel reg...	12/30/2003
6661022	Information processing structures An information processing structure is disclosed that is formed of single electron circuits each operating rapidly and stably by way of a single electron operation. The information processing structure includes a MOSFET (11), and a plurality of quantum do...	12/09/2003
6657253	Memory of multilevel quantum dot structure and method for fabricating the same Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating ...	12/02/2003
6649966	Quantum dot of single electron memory device and method for fabricating thereof A method for fabricating a quantum dot, which can be used to fabricate a single electron memory device. The method includes forming a first insulation layer on a semiconductor layer, then forming a second insulation layer on the first insulation layer. Ne...	11/18/2003
6614069	Nonvolatile semiconductor memory cell and method for fabricating the memory cell A nonvolatile semiconductor memory cell includes a transistor component formed on a substrate and a storage node that determines the switching state of the transistor component. The storage node is arranged near a control gate electrode. The storage node ...	09/02/2003
6607956	Method of manufacturing a single electron resistor memory device A method of manufacturing a memory device that includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the...	08/19/2003
6597036	Multi-value single electron memory using double-quantum dot and driving method thereof A multi-value single electron memory using a multi-quantum dot, in which the floating gates (FG) of a EEPROM or a flash memory are formed to act as two quantum dots, and the two quantum dots are applied to multi-value memories, and a driving method of the...	07/22/2003
6555882	Semiconductor element and semiconductor memory device using the same A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance...	04/29/2003
6545314	Memory using insulator traps A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as transistor drain current, is detected. By adjusting the density o...	04/08/2003
6544846	Method of manufacturing a single electron resistor memory device A method of manufacturing a memory device including a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the sem...	04/08/2003
6541326	Nonvolatile semiconductor memory device and process of production and write method thereof A nonvolatile semiconductor memory device featuring a reducing operating voltage while maintaining a good disturbance characteristic and high speed in a write operation, including a gate insulating film and gate electrode stacked on a channel forming regi...	04/01/2003
6524883	Quantum dot of single electron memory device and method for fabricating thereof A method for fabricating a quantum dot, which can be used to fabricate a single electron memory device. The method includes forming a first insulation layer on a semiconductor layer, then forming a second insulation layer on the first insulation layer. Ne...	02/25/2003
6514820	Method for forming single electron resistor memory Method for forming a memory device that includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the semico...	02/04/2003
6507509	Nonvolatile memory High device reliability, a reduction in power consumption, and a high operation speed are achieved. When a predetermined bias voltage is applied between a source 1 and a drain 2 to change a gate voltage, a current discretely flows between the source 1 and...	01/14/2003
6487112	Single-electron memory A memory device in which each cell includes two portions of isolated-granular material: one portion forms the channel of a single-electron transistor, and the other provides a hysteretic I-V relationship in the gate circuit of the transistor....	11/26/2002
6465375	Single electron MOSFET memory device and method A memory device and related methods are described. The memory device includes a plurality of cells, each cell including a MOSFET having a source coupled to a first end of a channel, a drain coupled to a second end of the channel, a gate formed on a gate i...	10/15/2002
6452831	Single electron resistor memory device and method A memory device includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the semiconductor material and a p...	09/17/2002
6452839	Method for erasing data from a single electron resistor memory A memory device includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the semiconductor material and a p...	09/17/2002
6441392	Device based on quantic islands and method for making same A quantic effect device which functions using a Coulomb blockade phenomenon. The device includes two electron reservoirs, two sets of islands that are separated by a dielectric layer, a protective insulating layer and a control electrode....	08/27/2002
6413819	Memory device and method for using prefabricated isolated storage elements A semiconductor device that includes a floating gate made up of a plurality of pre-formed isolated storage elements (18) and a method for making such a device is presented. The device is formed by first providing a semiconductor layer (12) upon which a fi...	07/02/2002
6407426	Single electron resistor memory device and method A memory device includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the semiconductor material and a p...	06/18/2002
6351007	Quantum thin line producing method and semiconductor device employing the quantum thin line There is provided a quantum thin line producing method capable of forming a quantum thin line that has good surface flatness of silicon even after formation of quantum thin line and a complete electron confining region with good controllability as well as...	02/26/2002
6351411	Memory using insulator traps A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as transistor drain current, is detected. By adjusting the density o...	02/26/2002
6333214	Memory of multilevel quantum dot structure and method for fabricating the same A semiconductor memory having a multilevel quantum dot structure is formed by alternatively disposing conductive layers and insulation layers, and processing these layers so that quantum dots are formed in the conductive layers. The writing and reading of...	12/25/2001
6323504	Single-electron memory device using an electron-hole coulomb blockade A single-electron memory device using the electron-hole Coulomb blockade is provided. A single-electron memory device in accordance with an embodiment of the present invention includes a plurality of quantum dot tunnel-junction arrays, a gate electrode, a...	11/27/2001
6320784	Memory cell and method for programming thereof A memory cell (101), its method of formation, and operation are disclosed. In accordance with one embodiment, the memory cell (101) comprises a first and second current carrying electrode (12) a control electrode (19), and doped discontinuous storage elem...	11/20/2001
6320216	Memory device with barrier portions having defined capacitance It is made possible to conduct writing and erasing information at high speed with a low gate voltage, to attain high integration with reduced power dissipation and to retain information accurately. A barrier layer, a transition layer, a barrier layer, a t...	11/20/2001
6310376	Semiconductor storage device capable of improving controllability of density and size of floating gate There is provided is a semiconductor storage device that can reduce a dispersion in characteristics such as a threshold voltage and a writing performance and has a low consumption power and a non-volatility. There are included a source region 9 and a drai...	10/30/2001
6304493	Single electron MOSFET memory device and method A memory device and related methods are described. The memory device includes a plurality of cells, each cell including a MOSFET having a source coupled to a first end of a channel, a drain coupled to a second end of the channel, a gate formed on a gate i...	10/16/2001
6301162	Single electron MOSFET memory device and method A memory device and related methods are described. The memory device includes a plurality of cells, each cell including a MOSFET having a source coupled to a first end of a channel, a drain coupled to a second end of the channel, a gate formed on a gate i...	10/09/2001
6297994	Single electron MOSFET memory device and method A memory device and related methods are described. The memory device includes a plurality of cells, each cell including a MOSFET having a source coupled to a first end of a channel, a drain coupled to a second end of the channel, a gate formed on a gate i...	10/02/2001
6297095	Memory device that includes passivated nanoclusters and method for manufacture A semiconductor memory device with a floating gate that includes a plurality of nanoclusters (21) and techniques useful in the manufacturing of such a device are presented. The device is formed by first providing a semiconductor substrate (12) upon which ...	10/02/2001
6246606	Memory using insulator traps A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as transistor drain current, is detected. By adjusting the density o...	06/12/2001
6232643	Memory using insulator traps A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as transistor drain current, is detected. By adjusting the density o...	05/15/2001
6221720	Method of making an electronic device and the same Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-dime...	04/24/2001
6222778	Single electron MOSFET memory device and method A memory device and related methods are described. The memory device includes a plurality of cells, each cell including a MOSFET having a source coupled to a first end of a channel, a drain coupled to a second end of the channel, a gate formed on a gate i...	04/24/2001

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Class 257/E29.301 - Programmable by two single electrons (EPO)