U.S. patents available from 1976 to present.
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Class 257/E29.299 - Characterized by property or structure of channel or contact thereto (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.273. This subclass
No. of patents: 401
Last issue date: 03/04/2008


                    11  
NumberTitleIssue Date
3983620Self-aligned CMOS process for bulk silicon and insulating substrate device
The method for fabrication of a self-aligned gate CMOS structure which employs no additional masking steps as compared to the standard CMOS fabrication process, this improved process providing the advantages of self-alignment between the N+ and P+ source ... 		10/05/1976
                    11  
 
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