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| Number | Title | Issue Date |
| 7420214 | Array substrate for display device An array substrate for a display device includes an insulating substrate, a buffer layer which is disposed on the insulating substrate and is formed of silicon oxide with a refractive index equal to a refractive index of the insulating substrate, a first insulation ... | 09/02/2008 |
| 7420201 | Strained-semiconductor-on-insulator device structures with elevated source/drain regions The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 09/02/2008 |
| 7416938 | Inkjet patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same An integrated thin-film capacitor includes a dielectric disposed between a first electrode and a second electrode. The thin-film capacitor includes a dielectric disposed upon the first electrode, and the dielectric exhibits a substantially uniform heat-altered morph... | 08/26/2008 |
| 7414259 | Strained germanium-on-insulator device structures The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 08/19/2008 |
| 7410882 | Method of manufacturing and structure of polycrystalline semiconductor thin-film heterostructures on dissimilar substrates According to various exemplary embodiments of this invention, a method of producing a semiconductor structure is provided that includes providing a layered structure on a first substrate, the layered structure including a silicon layer that is provided over a first ... | 08/12/2008 |
| 7402856 | Non-planar microelectronic device having isolation element to mitigate fringe effects and method to fabricate same A non-planar microelectronic device, a method of fabricating the device, and a system including the device. The non-planar microelectronic device comprises: a substrate body including a substrate base and a fin, the fin defining a device portion at a top region ther... | 07/22/2008 |
| 7259388 | Strained-semiconductor-on-insulator device structures The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 08/21/2007 |
| 7193280 | Indium oxide conductive film structures One-transistor ferroelectric memory devices using an indium oxide film (In2O3), an In2O3 film structure, and corresponding fabrication methods have been provided. The method for controlling resistivity in an In2... | 03/20/2007 |
| 7176490 | Semiconductor device It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, ... | 02/13/2007 |
| 6710411 | Method for crystallizing silicon film and thin film transistor and fabricating method using the same A method for crystallizing an amorphous silicon film which includes the steps of: preparing a substrate having the amorphous silicon film, the amorphous silicon film being formed on an intermediate layer in which an inner space exists; applying an energy to the amor... | 03/23/2004 |
| 6696309 | Methods for making electrooptical device and driving substrate therefor An electrooptical device including a first substrate including a display section having pixel electrodes and a peripheral-driving-circuit section provided on a periphery of the display section, a second substrate, and an optical material disposed between ... | 02/24/2004 |
| 6680485 | Thin film transistors on plastic substrates A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of... | 01/20/2004 |
| 6670675 | Deep trench body SOI contacts with epitaxial layer formation A silicon-on-insulation (SOI) body contact is formed within a device region of an SOI substrate so that no space of the SOI substrate is wasted for implementing a body contact. The body contact is formed by epitaxially growing silicon and depositing polys... | 12/30/2003 |
| 6667188 | Thin film transistor and method for fabricating same In a thin film transistor provided with a metallic layer with a light-shading property and a Si layer formed on an insulating layer, a dent for locally thinning the insulating layer is formed on a portion corresponding to a drain region. When the Si layer... | 12/23/2003 |
| 6664165 | Semiconductor device and fabrication method therefor There is provided a semiconductor apparatus, and a fabrication method thereof, which are improved such that a reduction in concentration at the SOI active layer is prevented, and a parasitic MOSFET is not formed even in cases where Mesa-type isolation tec... | 12/16/2003 |
| 6660666 | Integrated processing system for forming an insulating layer of thin film transistor liquid crystal display A processing station for forming an insulating film comprises a chemical vapor deposition (CVD) unit, a cleaning unit, a cassette station that receives a plurality of substrates, and a transfer system. The transfer system effectuates the conveyance of a s... | 12/09/2003 |
| 6656775 | Semiconductor substrate, semiconductor device, and manufacturing method thereof A semiconductor substrate that suppresses not only auto doping but also warpage can be provided by disposing an oxide film (4) at a position in a semiconductor substrate (1), so as to be apart from a main surface (1a) and a reverse surface (1b). The oxide... | 12/02/2003 |
| 6657261 | Ground-plane device with back oxide topography A ground-plane SOI device including at least a gate region that is formed on a top Si-containing layer of a SOI wafer, said top Si-containing layer being formed on a non-planar buried oxide layer, wherein said non-planar buried oxide layer has a thickness... | 12/02/2003 |
| 6649492 | Strained Si based layer made by UHV-CVD, and devices therein A method for fabricating a strained Si based layer, devices manufactured in this layer, and electronic systems comprising such layers and devices are disclosed. The method comprises the steps of growing epitaxially a SiGe layer on a substrate, and creatin... | 11/18/2003 |
| 6645826 | Semiconductor device and method of fabricating the same In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semicon... | 11/11/2003 |
| 6642085 | Thin film transistors on plastic substrates with reflective coatings for radiation protection Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be u... | 11/04/2003 |
| 6642092 | Thin-film transistors formed on a metal foil substrate A method for is provided forming a thin-film transistor (TFT) on a flexible substrate. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, stainless steel, or Kovar, having a thickness in the range of 10 to 500 mic... | 11/04/2003 |
| 6638872 | Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 10/28/2003 |
| 6635927 | Semiconductor device and method for fabricating the same The present invention relates to the field of the semiconductor fabrication. Also, the objects of the present invention are to provide a semiconductor device and method for fabricating the same having the MOS transistors capable of improving the thermal c... | 10/21/2003 |
| 6635929 | Uniform thin film semiconductor device A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at leas... | 10/21/2003 |
| 6636185 | Head-mounted display system A head mounted display system including a high resolution active matrix display which reduces center of gravity offset in a compact design. The active matrix display can be either a liquid crystal display or a light emitting display.... | 10/21/2003 |
| 6635909 | Strained fin FETs structure and method A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side o... | 10/21/2003 |
| 6627953 | High density electronic circuit modules The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of comp... | 09/30/2003 |
| 6620658 | Method of manufacturing a semiconductor device A gate insulating film of a TFT is formed without increasing a substrate temperature so that a substrate having a low heat resistance such as a plastic substrate can be used. Further, a structure in which an S value of the above TFT is improved and an off... | 09/16/2003 |
| 6593978 | Method for manufacturing active matrix liquid crystal displays The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors af... | 07/15/2003 |
| 6570184 | Thin film transistor and method for manufacturing the same Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm t... | 05/27/2003 |
| 6566179 | Method of manufacturing a transistor A method of manufacturing a TFT (10) is disclosed comprising source (8) and drain (8") electrodes joined by a semiconductor channel (6) formed from a semiconductor layer (4), a gate insulating layer (7) and a gate electrode (8'). The method comprising the... | 05/20/2003 |
| 6555875 | EL display device with a TFT A strip-like first insulating layer is formed on a glass substrate, and a second insulating layer is formed on the first insulating layer. Furthermore, an island-like semiconductor layer is formed on the second insulating layer. The island-like semiconduc... | 04/29/2003 |
| 6528853 | Method and semiconductor structure for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors A method and semiconductor structure are provided for implementing dual plane body contacts for silicon-on-insulator (SOI) transistors. A bulk silicon substrate is provided. A deep ion implant layer is implanted to reside below an oxide insulator. An oxyg... | 03/04/2003 |
| 6521940 | High density electronic circuit modules The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of comp... | 02/18/2003 |
| 6521511 | Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation ... | 02/18/2003 |
| 6521525 | Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having ... | 02/18/2003 |
| 6521947 | Method of integrating substrate contact on SOI wafers with STI process A method for forming a substrate contact in a substrate that includes a silicon on insulator region. A shallow isolation trench is formed in the silicon on insulator substrate. The shallow isolation trench is filled. Photoresist is deposited on the substr... | 02/18/2003 |
| 6518631 | Multi-Thickness silicide device formed by succesive spacers A transistor device formed on a semiconductor-on-insulator (SOI) substrate with a buried oxide (BOX) layer disposed thereon and an active layer disposed on the BOX layer having active regions defined by isolation trenches. The device includes a gate defin... | 02/11/2003 |
| 6518134 | Method for fabricating a semiconductor device with an air tunnel formed in the lower part of a transistor channel A method for fabricating a semiconductor device, which improves the threshold voltage by forming an air tunnel in the lower part of the transistor channel of a semiconductor device, and also improves the short channel effect by making better the sub-thres... | 02/11/2003 |
