Class 257/E29.294 - With inverted transistor structure (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.292. This subclass
No. of patents: 150
Last issue date: 08/05/2008

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Number	Title	Issue Date
7408198	Thin film transistor, thin film transistor array and repairing method thereof A thin film transistor (TFT) including a gate, a semiconductor layer, a source and a drain is provided. The gate has a control part, a connection part and a capacitance compensation part. The connection part is disposed between the control part and the capacitance c...	08/05/2008
7361929	Field-effect transistors with weakly coupled layered inorganic semiconductors A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source ...	04/22/2008
7298013	Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric l...	11/20/2007
7187005	Flat panel display with thin film transistor A flat panel display lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same...	03/06/2007
6995429	Semiconductor device with inverted thin film transistor structure that includes a body contact A semiconductor device in accordance with the present invention is equipped with a gate electrode 10 formed on a BOX layer 2, a gate oxide film 11 formed on the gate electrode, a body region 12a composed of epitaxial Si formed on t...	02/07/2006
6693258	Process for producing thin film semiconductor device and laser irradiation apparatus A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a s...	02/17/2004
6693300	Semiconductor thin film and semiconductor device A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semic...	02/17/2004
6670225	Method of manufacturing a semiconductor device After a catalyst element is introduced into an amorphous silicon film, the amorphous silicon film is converted into a crystalline silicon film by a heat treatment and laser irradiation. After a resist mask is formed on the crystalline silicon film, boron ...	12/30/2003
6638797	High performance poly-SiGe thin film transistor and a method of fabricating such a thin film transistor The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1-x Gex alloy material and a channel layer of silicon, in which the channel layer of...	10/28/2003
6632711	Process for producing thin film semiconductor device and laser irradiation apparatus A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a s...	10/14/2003
6624051	Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has f...	09/23/2003
6620711	Method of manufacturing a semiconductor device To efficiently remove catalytic elements from a crystalline semiconductor film. An Ni film is formed so as to come in contact with a semiconductor thin film of low crystallinity made of an amorphous silicon film, a microcrystalline silicon film or the lik...	09/16/2003
6617648	Projection TV Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, det...	09/09/2003
6613618	Thin-film transistor and method of producing the same A thin-film transistor is provided in which the thickness of the insulating film is optimized. A gate electrode is formed on a transparent substrate. A silicon nitride film and a silicon oxide film, acting as a gate insulating film, are formed over the tr...	09/02/2003
6610998	Method and structure for crystallizing a film A method and structure for crystallizing film is disclosed. The method includes the steps of forming a film on a substrate, forming a lens on the film to focus an electromagnetic wave on the film and directing the electromagnetic wave on the film inclusiv...	08/26/2003
6605497	Method of manufacturing semiconductor device over glass substrate having heat resistance When a crystalline semiconductor thin film formed by using a catalytic element for facilitating crystallization is subjected to a heat treatment in an atmosphere containing a halogen element at a temperature exceeding 700° C., a crystal structure in whic...	08/12/2003
6570552	Semiconductor device and manufacturing method thereof This invention is related to a method for controlling a threshold voltage of a bottom gate type thin film transistor as follows. Gate electrodes and a gate insulating film are formed on a glass substrate. An amorphous silicon film is formed thereon and th...	05/27/2003
6555423	Method of manufacturing a thin film transistor and a method of evaluating a polysilicon film In manufacturing a thin-film transistor the condition of a polysilicon film is evaluated, a manufacture margin for the film is determined from the condition evaluated, and the power of an excimer laser annealing apparatus is set based on the manufacture m...	04/29/2003
6541313	Transistor and process for fabricating the same A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalys...	04/01/2003
6541793	Thin-film transistor and semiconductor device using thin-film transistors In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active...	04/01/2003
6534353	Method of fabricating a thin-film transistor A method of fabricating a thin-film transistor including forming a polycrystalline semiconductor thin film on a substrate by irradiating with a laser beam an amorphous semiconductor thin film formed on the substrate. Heat treating the polycrystalline semi...	03/18/2003
6504175	Hybrid polycrystalline and amorphous silicon structures on a shared substrate Amorphous and polycrystalline silicon (hybrid) devices are formed close to one another employing laser crystallization and back side lithography processes. A mask (e.g., TiW) is used to protect the amorphous silicon device during laser crystallization. A ...	01/07/2003
6483124	Thin film transistors and their manufacture A method of manufacturing a bottom gate transistor comprises depositing a first microcrystalline silicon layer (40) over the gate insulator layer (22a) and exposing the microcrystalline silicon layer to a nitrogen plasma (42), thereby forming silicon nitr...	11/19/2002
6465288	Method of manufacturing a semiconductor device using a crystalline semiconductor film After a catalyst element is introduced into an amorphous silicon film, the amorphous silicon film is converted into a crystalline silicon film by a heat treatment and laser irradiation. After a resist mask is formed on the crystalline silicon film, boron ...	10/15/2002
6458635	Method of manufacturing a thin film semiconductor device In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystallizing step and an etch stopper insulating film forming step are continuously performed without exposing the atmos...	10/01/2002
6451636	Semiconductor device and display device having laser-annealed semiconductor element Regarding an element having a channel width W greater than a pitch P of a pulse laser beam, a direction of the channel width W of a channel region CH is inclined with respect to a direction of a major axis of a line beam LB. Consequently, even if a defect...	09/17/2002
6452211	Semiconductor thin film and semiconductor device A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semic...	09/17/2002
6444509	High performance poly-si1-xgex thin film transistor and a method of fabricating such a thin film transistor The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si1-x Gex alloy material and a channel layer of silicon, in which the channel layer of...	09/03/2002
6429483	Semiconductor device and method for forming the same In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOx Ny is formed t...	08/06/2002
6420219	Thin film transistors and method of forming thin film transistors A thin film transistor includes: a) a thin film transistor layer comprising a source region, a channel region and a drain region; the thin film transistor layer further comprising a drain offset region positioned between the drain region and the channel r...	07/16/2002
6417085	Methods of forming a field effect transistor gate construction The invention includes field effect transistors and methods of forming field effect transistors. In one implementation, a field effect transistor includes a semiconductive channel region and a gate construction operatively proximate the channel region. Th...	07/09/2002
6410372	Manufacture of thin film transistors In a method of manufacturing a transistor, a gate conductor is defined over an insulating substrate. A gate insulator layer is formed over the gate conductor. A first microcrystalline silicon layer is deposited over the gate insulator layer and is exposed...	06/25/2002
6380612	Thin film formed by inductively coupled plasma Silicon nitride is formed on a supporting substrate by chemical vapor deposition using an antenna outside a vacuum reaction chamber to apply RF power to form an inductively coupled plasma from a reactant gas....	04/30/2002
6376287	Method of making field effect A thin film field effect transistor includes: a) a thin film channel region; b) a pair of opposing electrically conductive first and second source/drain regions adjacent the thin film channel region; c) a gate insulator and a gate positioned adjacent the ...	04/23/2002
6359320	Thin-film transistor with lightly-doped drain There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturin...	03/19/2002
6344376	Method of forming a thin film transistor A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a fluorine containing...	02/05/2002
6335232	Method of manufacturing a thin film transistor On a transparent substrate where a gate electrode is formed, an amorphous silicon film is deposited by plasma CVD with a gate insulating film interposed therebetween. The silicon film is heated in an nitrogen atmosphere at 430&#b1;20° C. for an hour or l...	01/01/2002
6335541	Semiconductor thin film transistor with crystal orientation A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and...	01/01/2002
6309906	Photovoltaic cell and method of producing that cell The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radio frequency generator (15). The device includes...	10/30/2001
6303415	Semiconductor device and method of fabricating same There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced in...	10/16/2001

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Class 257/E29.294 - With inverted transistor structure (EPO)