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| Number | Title | Issue Date |
| 7382040 | Organic field effect transistor and display using same The present invention provides a field effect transistor that includes a semiconductor layer (15) containing an organic substance, and a first electrode (16), a second electrode (12), and a third electrode (14) that are not in contact wit... | 06/03/2008 |
| 6699758 | Semiconductor device and method for manufacturing the same The first insulating film (81) and the second insulating film (82) are so layered in this order on a SOI layer (3) as to cover a gate electrode (6) and a side wall (5) and dry-etched with different etching selection ratio (the etching rate of the second i... | 03/02/2004 |
| 6682966 | Semiconductor device and method for producing the same A semiconductor device according to the present invention includes a semiconductor substrate; device isolation regions provided in the semiconductor substrate; a first conductivity type semiconductor layer provided between the device isolation regions; a ... | 01/27/2004 |
| 6680240 | Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide A silicon-on-insulator (SOI) device with a strained silicon film has a substrate, and a buried oxide layer on the substrate. Silicon islands are formed on the buried oxide layer, the silicon islands being separated from each other by gaps. The buried oxid... | 01/20/2004 |
| 6677644 | Semiconductor integrated circuit having low voltage and high voltage transistors An integrated circuit formed on a SOI substrate has a low withstand voltage MOS transistors formed in the SOI substrate and comprising source and drain regions formed in the semiconductor film of the SOI substrate, a gate insulating film formed over the s... | 01/13/2004 |
| 6674136 | Semiconductor device having driver circuit and pixel section provided over same substrate In a manufacturing method of an active matrix type liquid crystal display device, a semiconductor device having good TFT characteristics is realized. LDD regions of a driver circuit NTFT and LDD regions of a pixel section NTFT are given different impurity... | 01/06/2004 |
| 6660085 | Polycrystal thin film forming method and forming system A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film ... | 12/09/2003 |
| 6661044 | Method of manufacturing MOSEFT and structure thereof A method of manufacturing an MOSFET. A substrate is provided. A trench is formed in the substrate. A sacrificial layer is formed to fill the trench. A doped semiconductive layer is formed over the substrate. The doped semiconductive layer is patterned to ... | 12/09/2003 |
| 6657225 | Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate In contrast to conventional semiconductor components formed on a silicon substrate, the present invention aims at providing a transistor component functioning as a semiconductor component by being placed on an insulating substrate made of plastic and the ... | 12/02/2003 |
| 6656799 | Method for producing FET with source/drain region occupies a reduced area A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide... | 12/02/2003 |
| 6657276 | Shallow trench isolation (STI) region with high-K liner and method of formation A shallow trench isolation region formed in a layer of semiconductor material. The shallow trench isolation region includes a trench formed in the layer of semiconductor material, the trench being defined by sidewalls and a bottom; a liner within the tren... | 12/02/2003 |
| 6653656 | Semiconductor device formed on insulating layer and method of manufacturing the same In a semiconductor device having an SOI structure and a method of manufacturing the same, influence by a parasitic transistor can be prevented, and no disadvantage is caused in connection with a manufacturing process. In this semiconductor device, an uppe... | 11/25/2003 |
| 6653700 | Transistor structure and method of fabrication A novel transistor structure and its method of fabrication. According to the present invention, the transistor includes an intrinsic silicon body having a first surface. A gate dielectric is formed on the first surface of the intrinsic silicon body. A gat... | 11/25/2003 |
| 6649492 | Strained Si based layer made by UHV-CVD, and devices therein A method for fabricating a strained Si based layer, devices manufactured in this layer, and electronic systems comprising such layers and devices are disclosed. The method comprises the steps of growing epitaxially a SiGe layer on a substrate, and creatin... | 11/18/2003 |
| 6645795 | Polysilicon doped transistor using silicon-on-insulator and double silicon-on-insulator Steep concentration gradients are achieved in semiconductor device of small sizes formed on SOI or double SOI wafers by using implanted polycrystalline material such as polysilicon as a solid diffusion source. Rapid diffusion of impurities along grain bou... | 11/11/2003 |
| 6642536 | Hybrid silicon on insulator/bulk strained silicon technology Silicon on insulator technology and strained silicon technology provide semiconductor devices with high performance capabilities. Shallow trench isolation technology provides smaller devices with increased reliability. Bulk silicon technology provides dev... | 11/04/2003 |
| 6635946 | Semiconductor device with trench isolation structure A semiconductor device with trench isolation structure is disclosed. The invention uses a trench isolation structure that can be formed by using conventional methods to prevent problems such as drain induced barrier lowering (DIBL), punch-through leakage ... | 10/21/2003 |
| 6635517 | Use of disposable spacer to introduce gettering in SOI layer A method of forming a self-aligned gettering region within an SOI substrate is provided. Specifically, the inventive method includes the steps of forming a disposable spacer on each vertical sidewall of a patterned gate stack region, the patterned gate st... | 10/21/2003 |
| 6624037 | XE preamorphizing implantation A SOI substrate is preamorphized by ion implanting Xe prior to forming source/drain extensions and source/drain regions, thereby virtually eliminating or significantly reducing floating body effects. Other aspects comprise ion implanting a Xe2 | 09/23/2003 |
| 6613613 | Thin film type monolithic semiconductor device A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor f... | 09/02/2003 |
| 6610142 | Process for fabricating semiconductor and process for fabricating semiconductor device A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon fi... | 08/26/2003 |
| 6611022 | Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having ... | 08/26/2003 |
| 6605827 | Electrooptical substrate device and manufacturing method for same, electrooptical apparatus, electronic apparatus and manufacturing method for a substrate device An electrooptical substrate device has pixel electrodes and pixel-switching TFTs connected thereto, on a substrate. The TFT is a P-channel TFT of an SOI structure that does not have a body contact. Due to this, a transistor is architected in each pixel th... | 08/12/2003 |
| 6583474 | Semiconductor device There is provided a semiconductor device having a new structure which allows a high reliability and a high field effect mobility to be realized in the same time. In an insulated gate transistor having an SOI structure utilizing a mono-crystal semiconducto... | 06/24/2003 |
| 6548859 | MOS semiconductor device and method of manufacturing the same The object of the present invention is to suppress a short channel effect on a threshold voltage. A channel region 5, a pair of source-drain regions and an isolating film 2 having a trench isolation structure are selectively formed in a main surface of a ... | 04/15/2003 |
| 6537862 | Method of forming semiconductor device having a GAA type transistor In a method of fabricating a semiconductor device having a gate all around(GAA) structure transistor, an SOI substrate having a SOI layer, a buried oxide layer, and a bottom substrate is prepared. The SOI layer is patterned to form an active layer pattern... | 03/25/2003 |
| 6521525 | Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having ... | 02/18/2003 |
| 6515340 | Semiconductor device A semiconductor device having a device separation region and an active region includes a gate oxide film, a source/drain region, and an electrode which is electrically coupled to the source/drain region. The active region is in contact with the gate oxide... | 02/04/2003 |
| 6509583 | Semiconductor device formed on insulating layer and method of manufacturing the same In a semiconductor device having an SOI structure and a method of manufacturing the same, influence by a parasitic transistor can be prevented, and no disadvantage is caused in connection with a manufacturing process. In this semiconductor device, an uppe... | 01/21/2003 |
| 6495886 | Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhib... | 12/17/2002 |
| 6462379 | SOI semiconductor device and method for manufacturing the same A SOI semiconductor device comprises: a SOI substrate in which a buried dielectric film and a surface semiconductor layer are laminated; at least one well formed in the surface semiconductor layer; and at least one transistor which is formed in the well a... | 10/08/2002 |
| 6458637 | Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is form... | 10/01/2002 |
| 6432829 | Process for making planarized silicon fin device An improved fin device used as the body of a field effect transistor ("FET") and an improved process of making the fin device. The fin device allows for the fabrication of very small dimensioned metal-oxide semiconductor ("MOS") FETs in the size range of ... | 08/13/2002 |
| 6426532 | Semiconductor device and method of manufacture thereof A semiconductor device according to the present invention includes a semiconductor substrate; device isolation regions provided in the semiconductor substrate; a first conductivity type semiconductor layer provided between the device isolation regions; a ... | 07/30/2002 |
| 6420759 | Semiconductor device There is provided a semiconductor device having a new structure which allows a high reliability and a high field effect mobility to be realized in the same time. In an insulated gate transistor having an SOI structure utilizing a mono-crystal semiconducto... | 07/16/2002 |
| 6413842 | Semiconductor device and method of fabricating the same A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate elect... | 07/02/2002 |
| 6414783 | Method of transferring semiconductors A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. The transfer includes the step of transferring the semiconductor regions onto a stretchable substrate. The resulting c... | 07/02/2002 |
| 6396105 | Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having ... | 05/28/2002 |
| 6365465 | Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques A structure and a method of manufacturing a double-gate metal oxide semiconductor transistor includes forming a laminated structure having a single crystal silicon channel layer and insulating oxide and nitride layers on each side of the single crystal si... | 04/02/2002 |
| 6352899 | Raised silicide source/drain MOS transistors having enlarged source/drain contact regions and method A method is provided for forming silicided source/drain electrodes in active devices in which the electrodes have very thin junction regions. In the process, adjacent active areas are separated by isolation regions, typically by LOCOS isolation, trench is... | 03/05/2002 |
