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| Number | Title | Issue Date |
| 7420241 | Semiconductor memory device and method of manufacturing the same A semiconductor memory device includes a memory cell which includes a first gate insulation film provided on the semiconductor substrate; a floating gate electrode provided on the first gate insulation film; a second gate insulation film provided on the floating gat... | 09/02/2008 |
| 7417252 | Flat panel display The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, ... | 08/26/2008 |
| 7413955 | Transistor for memory device and method for manufacturing the same Disclosed is a transistor for a memory device realizing both a step-gated asymmetry transistor and a fin transistor in a cell and a method for manufacturing the same. The transistor has an active region protruding from a predetermined region of a substrate and a gro... | 08/19/2008 |
| 7402862 | Multi-bit non-volatile memory device having a dual-gate and method of manufacturing the same, and method of multi-bit cell operation The present invention relates to a multi-bit non-volatile memory device having a dual gate employing local charge trap and method of manufacturing the same, and an operating method for a multi-bit cell operation. ... | 07/22/2008 |
| 7372095 | Integrated semiconductor circuit comprising a transistor and a strip conductor An integrated semiconductor circuit includes a transistor and a strip conductor (11). The transistor includes a first (1) and a second source/drain region (2) and a gate electrode. The strip conductor (11) is electrically insulated from a... | 05/13/2008 |
| 7371623 | Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabr... | 05/13/2008 |
| 7312504 | Transistor for memory device and method for manufacturing the same Disclosed is a transistor for a memory device realizing both a step-gated asymmetry transistor and a fin transistor in a cell and a method for manufacturing the same. The transistor has an active region protruding from a predetermined region of a substrate and a gro... | 12/25/2007 |
| 7306995 | Reduced hydrogen sidewall spacer oxide An embodiment of the invention is a method of making a semiconductor structure 10 where the spacer oxide layer 90 is formed by a hydrogen free precursor CVD process. Another embodiment of the invention is a semiconductor structure 10 having a sp... | 12/11/2007 |
| 7307282 | Thin film transistors and semiconductor device The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not lar... | 12/11/2007 |
| 7294882 | Non-volatile memory with asymmetrical doping profile Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the... | 11/13/2007 |
| 7148630 | Light emitting device There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the uneven... | 12/12/2006 |
| 7145196 | Asymmetric field effect transistor A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region fo... | 12/05/2006 |
| 7112844 | Semiconductor device and manufacturing method thereof The objectives of the present invention are achieving TFTs having a small off current and TFT structures optimal for the driving conditions of a pixel portion and driver circuits, and providing a technique of making the differently structured TFTs without increasing... | 09/26/2006 |
| 6700157 | Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 03/02/2004 |
| 6689649 | Methods of forming transistors An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each cond... | 02/10/2004 |
| 6680487 | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides... | 01/20/2004 |
| 6677221 | Semiconductor device and the fabricating method therefor In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities... | 01/13/2004 |
| 6664151 | Method for manufacturing a thin film transistor using steam anneal process to reinforce the surface of the ONO layer Disclosed is a method for manufacturing a thin film transistor of a semiconductor device, wherein an offset area is influenced by a gate voltage to increase the ON-current, which provides a thin film transistor which improves the ON/OFF characteristic of ... | 12/16/2003 |
| 6653657 | Semiconductor device and a method of manufacturing the same To provide a TFT that can operate at a high speed by forming a crystalline semiconductor film while controlling the position and the size of a crystal grain in the film to use the crystalline semiconductor film for a channel forming region of the TFT. Ins... | 11/25/2003 |
| 6639282 | Semiconductor device on silicon-on-insulator and method for manufacturing the semiconductor device A semiconductor device on a SOI and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor wafer having a SOI structure including an insulating layer having a predetermined thickness and a monocrystalline silic... | 10/28/2003 |
| 6627948 | Vertical layer type semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 09/30/2003 |
| 6624473 | Thin-film transistor, panel, and methods for producing them The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or pla... | 09/23/2003 |
| 6614083 | Wiring material and a semiconductor device having wiring using the material, and the manufacturing method An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion ... | 09/02/2003 |
| 6599818 | Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method For manufacture of a semiconductor device using a low heat resistant substrate such as a glass substrate, a method of heat treatment for activating an impurity element that is used to dope a semiconductor film and for performing gettering on the semicondu... | 07/29/2003 |
| 6589828 | Fabricating a thin film transistor having better punch through resistance and hot carrier effects Fabricating thin film transistors. A gate electrode is formed on a substrate. A gate oxide film is then formed on the gate electrode. A polysilicon layer is deposited on the gate oxide film. An impurity ion is implanted into the polysilicon layer to contr... | 07/08/2003 |
| 6580129 | Thin-film transistor and its manufacturing method The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain ... | 06/17/2003 |
| 6566709 | Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 05/20/2003 |
| 6544823 | Method of manufacturing semiconductor device A catalyst element for accelerating crystallization is added to an amorphous silicon film containing an impurity element for threshold voltage control, and a heat treatment is then performed to obtain a crystalline silicon film. Thereafter, the catalyst e... | 04/08/2003 |
| 6534787 | Asymmetrical MOS channel structure with drain extension A method of forming a MOS transistor without a lightly doped drain (LDD) region between the channel region and drain is provided. The channel region and a drain extension are formed from two separate tilted ion implantation processes, after the deposition... | 03/18/2003 |
| 6531713 | Electro-optical device and manufacturing method thereof An electro-optical device having high operation performance and reliability, and a manufacturing method thereof. A TFT structure which is strong agains hot carrier injection is realized by disposing a Lov region 207 in an n-channel TFT 203 which forms a d... | 03/11/2003 |
| 6528846 | Asymmetric high voltage silicon on insulator device design for input output circuits A silicon on insulation device having halo extensions of source and drain regions and an additional implant for inducing silicon lattice damage is able to withstand high operating voltages. A field lowering Lightly Doped Drain implant and removal of stand... | 03/04/2003 |
| 6525381 | Semiconductor-on-insulator body-source contact using shallow-doped source, and method A semiconductor device includes a wafer having a semiconductor layer with source, body and drain regions. A electrically-conducting region of the semiconductor region overlaps and electrically couples the source region and the body region. The electrical ... | 02/25/2003 |
| 6515332 | Insulated-gate field-effect semiconductor device An insulated-gate field-effect semiconductor device, preferably of the SOI type, has source (3) and drain (4) regions in a semiconductor body portion (1) at a first major surface of a semiconductor substrate (10). The gate-terminal metallisation (25) is p... | 02/04/2003 |
| 6509591 | Thin film transistor with photoconductive material A thin film transistor made with photoconductive material. The thin film transistor comprises a transparent substrate, a gate electrode on the transparent substrate, a dielectric layer on the gate electrode and the transparent substrate, a photoconductive... | 01/21/2003 |
| 6507071 | Lateral high-voltage sidewall transistor A lateral high-voltage sidewall transistor configuration includes a low-doped semiconductor substrate of a first conductivity type and a low-doped epitaxial layer of a second conductivity type disposed on the semiconductor substrate. First semiconductor l... | 01/14/2003 |
| 6504226 | Thin-film transistor used as heating element for microreaction chamber The thin film transistor formed of polycrystalline silicon is positioned adjacent a heat reaction chamber. The gate electrode for the transistor is formed within a silicon substrate and a gate dielectric is positioned over the gate electrode. A pass trans... | 01/07/2003 |
| 6501098 | Semiconductor device The gate electrode of a crystalline TFT is constructed as a clad structure which consists of a first gate electrode, a second gate electrode and a third gate electrode, thereby to enhance the thermal resistance of the gate electrode. Besides, an n-channel... | 12/31/2002 |
| 6479332 | Methods of forming integrated circuitry An electrical interconnection method includes: a) providing two conductive layers separated by an insulating material on a semiconductor wafer; b) etching the conductive layers and insulating material to define and outwardly expose a sidewall of each cond... | 11/12/2002 |
| 6458633 | Thin film transistor and method for fabricating the same A thin film transistor and a method for fabricating the same are disclosed, in which an offset region is affected or biased by a gate voltage to increase on-current, thereby improving on/off characteristic of a device. A first semiconductor layer is forme... | 10/01/2002 |
| 6448620 | Semiconductor device and process for producing the same To provide a semiconductor device having a large allowable current, a demanded withstand voltage, and small output capacitance and resistance, the semiconductor device comprises a semiconductor layer formed on a semiconductor substrate, and the semiconduc... | 09/10/2002 |
