Quotables
"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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| Number | Title | Issue Date |
| 7442956 | Organic EL device and electronic apparatus To provide an organic EL device capable of making uniform a dry speed of a liquid material coated in a display area. There is provided an organic EL device in which a plurality of pixels XR, XG, XB is arranged in an effective display... | 10/28/2008 |
| 7417252 | Flat panel display The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, ... | 08/26/2008 |
| 7410842 | Method for fabricating thin film transistor of liquid crystal display device A method for fabricating a thin film transistor for an LCD device is presented that uses six mask processes. Portions of a semiconductor layer formed on a substrate are doped with first and second impurities in different regions. A conductive layer is deposited and ... | 08/12/2008 |
| 7411215 | Display device and method of fabricating the same To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes conn... | 08/12/2008 |
| 7396765 | Method of fabricating a liquid crystal display device A method of fabricating a liquid crystal display device according to an embodiment of the present invention includes forming first and second conductive layers on a substrate, wherein the first layer is transparent; patterning the second conductive layer and the fir... | 07/08/2008 |
| 7365402 | LDMOS transistor An LDMOS semiconductor transistor structure comprises a substrate having an epitaxial layer of a first conductivity type, a source region extending from a surface of the epitaxial layer of a second conductivity type, a lightly doped drain region within the epitaxial... | 04/29/2008 |
| 7352003 | Electro-optical device having thin film transistor with LDD region An electro-optical device, such as a camera, includes a display unit having a thin film transistor including a source region, a drain region, a channel region formed between the source and drain regions, and a LDD region formed between the channel region and at leas... | 04/01/2008 |
| 7348599 | Semiconductor device and manufacturing method thereof A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at l... | 03/25/2008 |
| 7335540 | Low temperature polysilicon thin film transistor and method of manufacturing the same A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the pe... | 02/26/2008 |
| 7321151 | Semiconductor device and method of fabricating the same An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall s... | 01/22/2008 |
| 7291523 | Method of manufacturing a semiconductor device After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performe... | 11/06/2007 |
| 7235843 | Implanting carbon to form P-type source drain extensions The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasin... | 06/26/2007 |
| 7221021 | Method of forming high voltage devices with retrograde well A high voltage device with retrograde well is disclosed. The device comprises a substrate, a gate region formed on the substrate, and a retrograde well placed in the substrate next to the gate region, wherein the retrograde well reduces a dopant concentration on the... | 05/22/2007 |
| 7166893 | Semiconductor integrated circuit device A MISFET capable of a high speed operation includes a metal silicide layer in a high concentration region aligned with a gate side wall layer on a self-alignment basis. A MISFET which can be driven at a high voltage includes an LDD portion having a width greater tha... | 01/23/2007 |
| 7132690 | Multi-channel type thin film transistor and method of fabricating the same A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and sou... | 11/07/2006 |
| 7126190 | Self-aligned gate and method A semiconductor structure includes a silicon substrate of a first conductivity type including wells of a second conductivity type formed on a surface thereof. The wells may be laterally isolated by shallow trench isolation. Transistors are formed in the wells by fir... | 10/24/2006 |
| 7119408 | Semiconductor device and method for fabricating the same A semiconductor device of the present invention includes, as a peripheral MIS transistor 25b, a gate insulating film 13b and a gate electrode 14b provided above an active region 10b, first and second sidewalls ... | 10/10/2006 |
| 7109108 | Method for manufacturing semiconductor device having metal silicide A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidi... | 09/19/2006 |
| 7084458 | Semiconductor device having triple LDD structure and lower gate resistance formed with a single implant process A method of fabricating a semiconductor device having a triple LDD (lateral diffused dopants) structure is disclosed. This fabrication method requires a single implant process, leading to reduction in fabrication costs and fabrication time. Moreover, this fabricatio... | 08/01/2006 |
| 6703265 | Semiconductor device and method of manufacturing the same The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semicond... | 03/09/2004 |
| 6700134 | Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same The present invention provides a semiconductor device and a method of manufacturing the same, the device being provided with a semiconductor circuit consisting of a semiconductor element that is capable of improving characteristics of a TFT and has unifor... | 03/02/2004 |
| 6699738 | Semiconductor doping method and liquid crystal display device fabricating method using the same A semiconductor doping method includes steps of forming an insulation layer on a substrate, forming a semiconductor layer on the insulation layer, forming a photoresist layer on the insulation layer, patterning the photoresist layer to provide a portion o... | 03/02/2004 |
| 6699758 | Semiconductor device and method for manufacturing the same The first insulating film (81) and the second insulating film (82) are so layered in this order on a SOI layer (3) as to cover a gate electrode (6) and a side wall (5) and dry-etched with different etching selection ratio (the etching rate of the second i... | 03/02/2004 |
| 6693257 | Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device YAG laser can simultaneously emit a plurality of laser beams having different wavelengths from each other. By simultaneously irradiating the laser beams having different wavelengths from each other to a same region of a non-single crystal semiconductor fi... | 02/17/2004 |
| 6693258 | Process for producing thin film semiconductor device and laser irradiation apparatus A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a s... | 02/17/2004 |
| 6693044 | Semiconductor device and method of manufacturing the same A semiconductor device, which uses a crystalline silicon film having high crystallinity and a flat surface with few ridges and has high characteristics, and a method of manufacturing the semiconductor device are provided. According to the manufacturing me... | 02/17/2004 |
| 6690034 | Light emitting device There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a pixel portion. In manufacturing the TFTs, after the TFT having... | 02/10/2004 |
| 6690063 | Thin film semiconductor integrated circuit and method for forming the same There is provided an aluminum gate type thin film transistor integrated circuit having a matrix region and a region in which driving circuits thereof are formed wherein impurity regions are selectively formed on a semiconductor thin film in the form of is... | 02/10/2004 |
| 6682964 | TFT for LCD device and fabrication method thereof An object of the present invention is to crystallize and activate the doped amorphous semiconductor layer at the same time. It is also an object to provide the TFT with good electrical connection between the source or drain electrodes and the semiconducto... | 01/27/2004 |
| 6677189 | Method for forming polysilicon thin film transistor with a self-aligned LDD structure A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a sourc... | 01/13/2004 |
| 6677611 | Thin film circuit A practical operational amplifier circuit is formed using thin film transistors. An operational amplifier circuit is formed by thin film transistors formed on a quartz substrate wherein 90% or more of n-channel type thin film transistors have mobility at ... | 01/13/2004 |
| 6677221 | Semiconductor device and the fabricating method therefor In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities... | 01/13/2004 |
| 6677646 | Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS A high-performance recessed channel CMOS device including an SOI layer having a recessed channel region and adjoining extension implant regions and optional halo implant regions; and at least one gate region present atop the SOI layer and a method for fab... | 01/13/2004 |
| 6673659 | Semiconductor device and method of producing the same A base film is formed for the TFTs in order to prevent diffusion of impurities from the glass substrate into the active layer, to maintain stability in the characteristics such as Vth and S-value of the TFTs and to maintain enhanced productivity. A film i... | 01/06/2004 |
| 6674136 | Semiconductor device having driver circuit and pixel section provided over same substrate In a manufacturing method of an active matrix type liquid crystal display device, a semiconductor device having good TFT characteristics is realized. LDD regions of a driver circuit NTFT and LDD regions of a pixel section NTFT are given different impurity... | 01/06/2004 |
| 6670225 | Method of manufacturing a semiconductor device After a catalyst element is introduced into an amorphous silicon film, the amorphous silicon film is converted into a crystalline silicon film by a heat treatment and laser irradiation. After a resist mask is formed on the crystalline silicon film, boron ... | 12/30/2003 |
| 6670641 | Thin film transistor, method of manufacturing the same and thin film transistor liquid crystal display device A thin film transistor (TFT) is provided with a precisely, lightly doped drain (LDD) structure formed on a substrate of insulators, such as a glass sheet. A method of making the TFT and a liquid crystal display device with the same are disclosed. The TFT ... | 12/30/2003 |
| 6667517 | Electrooptical device and electronic device An electrooptical device including a semiconductor device which is formed in a semiconductor layer on an insulating layer in such a manner that floating substrate effects which are essential in a SOI structure is suppressed without reducing the aperture r... | 12/23/2003 |
| 6661096 | Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3... | 12/09/2003 |
| 6656779 | Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating... | 12/02/2003 |
