Class 257/E29.271 - With Schottky drain or source contact (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.255. This subclass
No. of patents: 70
Last issue date: 10/07/2008

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Number	Title	Issue Date
7432579	Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a first drain region of the second-conductivity type, a resurf layer o...	10/07/2008
7352008	Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma...	04/01/2008
7294898	Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effe...	11/13/2007
7195996	Method of manufacturing silicon carbide semiconductor device A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then th...	03/27/2007
6693294	Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same Provided are a Schottky barrier tunnel transistor (SBTT) and a method of fabricating the same. The SBTT includes a buried oxide layer formed on a base substrate layer and having a groove at its upper surface; an ultra-thin silicon-on-insulator (SOI) layer...	02/17/2004
6683362	Metal-semiconductor diode clamped complementary field effect transistor integrated circuits The subject invention relates to a metal-semiconductor diode clamped semiconductor device and method for producing such device. A specific embodiment of the subject invention utilizes one or more Schottky barriers at, for example, the drain and/or source ...	01/27/2004
6674099	MISFET A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2). A drai...	01/06/2004
6624493	Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneous...	09/23/2003
6509609	Grooved channel schottky MOSFET A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 1017 cm-3. A grooved channel is formed in...	01/21/2003
6495882	Short-channel schottky-barrier MOSFET device A MOSFET device and method of fabricating are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket impl...	12/17/2002
6423598	Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit A Schottky diode which provides a structure having no P-N junction while improving voltage resistance against a reverse bias when employed in combination with an insulated gate semiconductor device in particular. In order to attain the aforementioned obje...	07/23/2002
6339005	Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET A silicon on insulator transistor is disclosed which has a Schottky contact to the body. The Schottky contact may be formed on the source and/or drain side of the gate conductor. A spacer, with at least a part thereof being disposable, is formed on the si...	01/15/2002
6303479	Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts The present invention Is a fabrication method for a short-channel Schottky-barrier field-effect transistor device. The method of the present invention includes introducing channel dopants into a semiconductor substrate such that the dopant concentration v...	10/16/2001
6268636	Operation and biasing for single device equivalent to CMOS Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induc...	07/31/2001
6133107	Process for co-integrating DMOS transistors with schottky diode body structure A DMOS device in a complex integrated circuit having a well region defined by a buried isolation region and an overlapping deep drain region within an epitaxial layer formed over a substrate, a body region having two source regions within the well region,...	10/17/2000
5962893	Schottky tunneling device An n-semiconductor layer is arranged on a low-resistance n-substrate. A drain electrode is in ohmic contact with the n-substrate. A source electrode forms a Schottky junction with the n-semiconductor layer. A gate electrode is arranged adjacent to the sou...	10/05/1999
5930605	Compact self-aligned body contact silicon-on-insulator transistors A field effect transistor structure having: a first type conductivity semiconductor body disposed on an insulator and having formed in different regions thereof: (a) a source region; (b) a drain region, such source and drain regions being of a conductivit...	07/27/1999
5925910	DMOS transistors with schottky diode body structure A DMOS device in a complex integrated circuit having a well region defined by a buried isolation region and an overlapping deep drain region within an epitaxial layer formed over a substrate, a body region having two source regions within the well region,...	07/20/1999
5834793	Semiconductor devices A semiconductor device has a semiconductor substrate, a source and a drain region, each formed at the surface of said semiconductor substrate, and each having a potential barrier with respect to the semiconductor substrate. A gate electrode is formed on t...	11/10/1998
5821575	Compact self-aligned body contact silicon-on-insulator transistor A field effect transistor structure having a first type conductivity semiconductor body disposed on an insulator and having formed in different regions of the semiconductor, a source region and a drain region of the opposite type conductivity to the first...	10/13/1998
5801398	Field effect transistor A field effect transistor including a gate electrode, a semiconductor region, a source electrode and a drain electrode, the source and drain electrodes being formed on opposite sides of the semiconductor region and spaced apart from the gate electrode. Th...	09/01/1998
5760449	Regenerative switching CMOS system Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are el...	06/02/1998
5721170	Method of making a high-voltage MOS transistor with increased breakdown voltage In a high-voltage MOS transistor that utilizes a lightly-doped drain region to isolate a heavily-doped drain region from the substrate, the reverse bias which can be applied across the drain-to-substrate junction of the transistor is increased by reducing...	02/24/1998
5693569	Method of forming silicon carbide trench mosfet with a schottky electrode A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequent...	12/02/1997
5663584	Schottky barrier MOSFET systems and fabrication thereof (MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricat...	09/02/1997
5614749	Silicon carbide trench MOSFET A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequent...	03/25/1997
5525829	Field effect transistor with integrated schottky diode clamp A MOSFET device is constructed with an integrated Schottky diode clamp connected between the source or drain terminal and the bulk terminal. In an illustrative implementation, one or more MOSFETs are formed in an n-well located in a p-type silicon substra...	06/11/1996
5438218	Semiconductor device with Shottky junction A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is p...	08/01/1995
5407837	Method of making a thin film transistor This is a method of fabricating a transistor on a wafer. The method comprises: forming a doped silicon layer; patterning the active transistor regions of the doped silicon layer and utilizing a silicon etch to remove the non-transistor regions of the dope...	04/18/1995
5338698	Method of fabricating an ultra-short channel field effect transistor An ultra-short channel field effect transistor provides a combination of a shallow junction for injection of carriers into a conduction channel and a Schottky barrier below the shallow junction with a lowered barrier height to reduce the depletion region ...	08/16/1994
5323053	Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates In accordance with the present invention, a silicon device fabricated on a (100) silicon substrate is provided with a (111) slant surface and an electrical contact comprising epitaxial low Schottky barrier silicide is formed on the (111) surface. For exam...	06/21/1994
5321284	High frequency FET structure A GaAs field effect transistor with a source contact including both an ohmic contact and a Schottky barrier, the Schottky barrier between the ohmic contact and the gate, is disclosed. The Schottky barrier provides a high frequency source contact close to ...	06/14/1994
5216264	Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact A silicon carbide field-effect transistor is disclosed which includes an MOS structure composed successively of a silicon carbide layer, a gate insulator film, and a gate electrode. The field-effect transistor has source and drain regions formed in the si...	06/01/1993
5177572	MOS device using accumulation layer as channel A semiconductor device comprises: a drain region made of one conductivity type semiconductor substrate having first and second major surfaces; a source region made of one conductivity type first impurity region and formed inside said drain region with bei...	01/05/1993
5177568	Tunnel injection semiconductor devices with Schottky barriers A tunnel injection type semiconductor device having an MIS structure comprising a semiconductor region, a source, a drain and a gate electrode, wherein said source and said drain are composed of a metal or metal compound member, respectively, and wherein ...	01/05/1993
5171696	Semiconductor device and method of manufacturing the same The present invention direct to a semiconductor device and a method of manufacturing the same. According to the semiconductor device of the present invention, a first region is partially formed on a major surface of a semiconductor substrate so as to have...	12/15/1992
5170231	Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current A silicon carbide field-effect transistor is provided which includes a semiconductor substrate, a channel formation layer of silicon carbide formed above the substrate, source and drain regions provided in contact with the channel formation layer, a gate ...	12/08/1992
5164802	Power VDMOSFET with schottky on lightly doped drain of lateral driver FET A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second elect...	11/17/1992
5159416	Thin-film-transistor having Schottky barrier Disclosed herein is a semiconductor device including a thin-film-transistor which comprises a silicon film formed on an insulating layer and including a substrate area, a gate provided to form a channel in the substrate area, a source consisting of a firs...	10/27/1992
5086324	Insulated gate bipolar transistor The present invention direct to a semiconductor device and a method of manufacturing the same. According to the semiconductor device of the present invention, a first region is partially formed on a major surface of a semiconductor substrate so as to have...	02/04/1992

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Class 257/E29.271 - With Schottky drain or source contact (EPO)