Class 257/E29.246 - With two-dimensional charge carrier gas channel (e.g., HEMT; with two-dimensional charge-carrier layer formed at heterojunction interface) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.242. This subclass
No. of patents: 41
Last issue date: 10/21/2008

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Number	Title	Issue Date
7439555	III-nitride semiconductor device with trench structure A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate die...	10/21/2008
7432538	Field-effect transistor A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. T...	10/07/2008
7425721	Field-effect transistor A field-effect transistor is provided which includes: a first nitride semiconductor layer having a lattice constant a1 and a bandgap Eg1; a second nitride semiconductor layer stacked on the first nitride semiconductor layer and having a lattice...	09/16/2008
7408208	III-nitride power semiconductor device A III-nitride power semiconductor device that includes a two dimensional electron gas having a low field region under the gate thereof. ...	08/05/2008
7408182	Surface passivation of GaN devices in epitaxial growth chamber The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation l...	08/05/2008
7400001	Nitride based hetero-junction field effect transistor A nitride based hetero-junction field effect transistor includes a high resistance nitride semiconductor layer formed on a substrate, an Al-doped GaN layer formed on the high resistance nitride semiconductor layer and having an Al content of 0.1˜1%, an undoped GaN ...	07/15/2008
7361536	Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The structure has a channel layer for the depletion mode and enhancement...	04/22/2008
7355215	Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. ...	04/08/2008
7326971	Gallium nitride based high-electron mobility devices A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A...	02/05/2008
7304328	Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion A method of forming a relaxed SiGe-on-insulator substrate having enhanced relaxation, significantly lower defect density and improved surface quality is provided. The method includes forming a SiGe alloy layer on a surface of a first single crystal Si layer. The fir...	12/04/2007
7268375	Inverted nitride-based semiconductor structure A nitride-based semiconductor structure is provided. The structure includes an active layer that comprises an inverted quantum well structure that includes Indium and Nitrogen. The structure can be used to create a field effect transistor. In this case, the active l...	09/11/2007
7253454	High electron mobility transistor A HEMT device including a GaN channel structure including a very thin (Al,In,Ga)N subchannel layer that is disposed between a first GaN channel layer and a second GaN channel layer, to effect band bending induced from the piezoelectric and spontaneous charges associ...	08/07/2007
7250642	Field-effect transistor The present invention, which aims to provide a gallium arsenide field-effect transistor that can reduce degradation of field-effect transistor characteristics, and to realize miniaturization of the transistor, includes: a substrate; a mesa which includes a channel l...	07/31/2007
7244973	Field-effect semiconductor device and method for making the same A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN,...	07/17/2007
7199408	Semiconductor multilayer structure, semiconductor device and HEMT device A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on a substrate, and a group of stacked semiconductor layers including a first semiconductor layer made of a group-III nitride, preferably GaN, a second ...	04/03/2007
7105868	High-electron mobility transistor with zinc oxide A zinc oxide (ZnO) field effect transistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source con...	09/12/2006
6674101	GaN-based semiconductor device A GaN-based semiconductor device made of GaN-based semiconductor materials includes a bank made of a first undoped material and formed on a base layer, a thin layer made of a second undoped material having higher band-gap energy than the first undoped mat...	01/06/2004
6479842	Field effect transistor with a quantum-wave interference layer A field effect transistor having a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W, and the quantum-wave interference layer is formed in a ...	11/12/2002
6436784	Method of forming semiconductor structure Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brilluin-zone...	08/20/2002
6326650	Method of forming a semiconductor structure Semiconductor structures and a method of forming semiconductor structures The avalanche breakdown characteristics, such as breakdown voltage and impact ionisation coefficient, of a semiconductor structure can be controlled by controlling the Brillouin-zon...	12/04/2001
5898200	Microwave integrated circuit Disclosed in a microwave integrated circuit, having a semiconductor substrate on which a field effect transistor is formed, a micro strip line, a contact hole and an interconnecting line. The microstrip line comprises a ground conductor, a signal line and...	04/27/1999
5882952	Semiconductor device including quantum wells or quantum wires and method of making semiconductor device A method of fabricating a semiconductor device includes: forming multiatomic steps by MOCVD on a (110) semiconductor substrate inclined at an angle toward the 001! direction or the 111! direction; and growing at least one double heterostructure includ...	03/16/1999
5828101	Three-terminal semiconductor device and related semiconductor devices A semiconductor device has trenches formed on the surface of a semiconductor. The device passes a main current through a channel formed between the trenches and controls the main current with the use of gate electrodes buried in the trenches. The main cur...	10/27/1998
5742077	Semiconductor device A semiconductor device comprises a heterostructure which includes first and second mutually separated conductive layers, e.g., active layers in which a respective two-dimensional electron gas can be induced. A source region and drain region each contact b...	04/21/1998
5701019	Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer A semiconductor device (e.g., hetero-junction field-effect transistor) which has decreased capacitance between the gate and drain, and which has decreased source resistance, is provided. Structure in which a contact layer 6 comes in contact with the side ...	12/23/1997
5701016	Semiconductor device and method for its manufacture A semiconductor device according to the invention is characterized by comprising a stacked structure which has a plurality of layers for providing rear barrier confinement potentials, an oblique side surface intersecting edges of the plurality of layers, ...	12/23/1997
5689124	Semiconductor device A semiconductor device comprises a silicon substrate, at least one compound semiconductor layer formed on the silicon substrate and including a GaAs semiconductor layer for serving as a source/drain regions of at least one field-effect transistor (FET), a...	11/18/1997
5436499	High performance gaas devices and method High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by possessing a high degree of electrical insulation, both vertical ...	07/25/1995
5436474	Modulation doped field effect transistor having built-in drift field A MODFET device has highly doped source and drain regions separated by an undoped semiconductor alloy in which the mole fraction is graded between the source and the drain and with a conduction (and/or valence) band discontinuity at the heterojunction bet...	07/25/1995
5412224	Field effect transistor with non-linear transfer characteristic A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each c...	05/02/1995
5399887	Modulation doped field effect transistor A modulation doped field effect transistor (10) is formed to have a drain (28, 12, 11) that is vertically displaced from the source (16, 17) and channel (20, 21) regions. The transistor (10) has the source (16, 17), channel (20, 21) and a portion of the d...	03/21/1995
5313093	Compound semiconductor device A compound semiconductor device includes an undoped semiconductor layer; a doped semiconductor layer formed on the undoped semiconductor layer and having smaller electron affinity than the undoped semiconductor layer; a gate electrode formed on the doped ...	05/17/1994
5296390	Method for fabricating a semiconductor device having a vertical channel of carriers A semiconductor device comprises a substrate having a stepped upper major surface, an emitter layer of a semiconductor material provided on the stepped upper major surface of the substrate and having a corresponding stepped upper major surface, a base lay...	03/22/1994
5266506	Method of making substantially linear field-effect transistor An FET with multiple channels to provide a substantially linear transfer characteristic. The widths and carrier concentrations of the channels, and the depths of the channels below the gate of the FET, are adjusted such that a substantially linear gate vo...	11/30/1993
5223724	Multiple channel high electron mobility transistor An FET with multiple channels to provide a substantially linear transfer characteristic. The widths and carrier concentrations of the channels, and the depths of the channels below the gate of the FET, are adjusted such that a substantially linear gate vo...	06/29/1993
5212404	Semiconductor device having a vertical channel of carriers A semiconductor device comprises a substrate having a stepped upper major surface, an emitter layer of a semiconductor material provided on the stepped upper major surface of the substrate and having a corresponding stepped upper major surface, a base lay...	05/18/1993
4962409	Staggered bandgap gate field effect transistor A field effect transistor having a highly doped gate wherein both the gate and the channel are different semiconductors with an energy band relationship that provides a barrier to both electrons and holes. The energy band relationship is staggered so that...	10/09/1990
4807001	Heterojunction field-effect device For high speed operation and improvement in transconductance, there is disclosed a heterojunction field-effect device comprising, a first layer of a first compound semiconductor material having a relatively high donor impurity concentration, a second laye...	02/21/1989
4737827	Heterojunction-gate field-effect transistor enabling easy control of threshold voltage A heterojunction-gate field-effect transistor comprises an active layer of semiconductor material having source and drain regions, an intermediate layer of another semiconductor material formed on the active layer between the source and drain regions, the...	04/12/1988
4734750	High electron mobility heterojunction semiconductor devices High electron mobility heterojunction semiconductor devices provided with a means to cause exposure of the electron source layer thereof to an electromagnetic wave allows modulation, adjustment and the like of the characteristics thereof even after comple...	03/29/1988

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Class 257/E29.246 - With two-dimensional charge carrier gas channel (e.g., HEMT; with two-dimensional charge-carrier layer formed at heterojunction interface) (EPO)