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| Number | Title | Issue Date |
| 7271447 | Semiconductor device A semiconductor substrate includes a first semiconductor layer that is formed on a semiconductor base substrate, a second semiconductor layer that is formed on the first semiconductor layer and that has an etching selection ratio smaller than that of the first semic... | 09/18/2007 |
| 7141838 | Buried word line memory integrated circuit system An integrated circuit system includes providing a semiconductor substrate and forming buried word lines in the semiconductor substrate with the buried word lines including vertical charge-trapping dielectric layers. The system further includes forming bit lines furt... | 11/28/2006 |
| 6432738 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 08/13/2002 |
| 6252265 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 06/26/2001 |
| 6242768 | Charge coupled device and a driving method thereof The present invention relates to a charge coupled device (CCD) and a driving method, and the driving method of the CCD includes the steps of: providing a CCD including a semiconductor substrate, a photodiode in the semiconductor substrate, a charge transf... | 06/05/2001 |
| 6194242 | Fabrication of solid-state imaging device having no transfer error of the signal charge from vertical horizontal charge-transfer section A solid-state imaging device that prevents the transfer errors of the signal charges from vertical charge-transfer sections to a horizontal charge-transfer section. A first plurality of buried channel regions in vertical charge-transfer sections are conne... | 02/27/2001 |
| 6114717 | Solid-state imaging device having no transfer error of the signal charges from vertical horizontal charge-transfer section A solid-state imaging device that prevents the transfer errors of the signal charges from vertical charge-transfer sections to a horizontal charge-transfer section. A first plurality of buried channel regions in vertical charge-transfer sections are conne... | 09/05/2000 |
| 6107124 | Charge coupled device and method of fabricating the same A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a ... | 08/22/2000 |
| 6104072 | Analogue MISFET with threshold voltage adjuster A threshold voltage or a channel potential of a MIS device can be set in an analogue fashion. A MIS device includes a multi-layer structure having a gate insulating film in which an oxide film, a nitride film and an oxide film are laminated in that order.... | 08/15/2000 |
| 6100552 | Multi-tapped bi-directional CCD readout register A bi-directional multi-tapped CCD sensor readout structure includes a well formed in a substrate, a channel formed in the well defining a channel direction, and a clocking structure disposed over the channel and oriented transversely to the channel direct... | 08/08/2000 |
| 6018170 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 01/25/2000 |
| 5917208 | Charge coupled device and electrode structure In a method of manufacturing a charge coupled device, a channel layer is formed on a surface of a semiconductor substrate. Then, first layer transfer electrodes are formed in a charge transfer direction above the channel layer via a first insulating film.... | 06/29/1999 |
| 5892251 | Apparatus for transferring electric charges A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair ... | 04/06/1999 |
| 5837563 | Self aligned barrier process for small pixel virtual phase charged coupled devices The method for making a charge coupled device includes: forming a semiconductor region 24 of a first conductivity type; forming gate regions 28 and 30 overlying and separated from the semiconductor region 24; forming clocked barrier implants 36 and 38 of ... | 11/17/1998 |
| 5770870 | Solid-state imaging device having an unwanted charge drain section disposed adjacent to horizonal charge transfer section A solid-stage imaging device has a region in which there is disposed an unwanted charge drain section 106 for receiving unwanted charges drained from vertical charge transfer sections 102 and a horizontal charge transfer section 103. A P-type well layer 3... | 06/23/1998 |
| 5578842 | Charge coupled device image sensor A charge coupled device (CCD) image sensor and more particularly a wiring of charge transfer electrodes of a CCD image sensor which is made suitable for improving the charge transfer efficiency of vertical charge coupled devices (VCCDs) thereof. The CCD i... | 11/26/1996 |
| 5477069 | Charge transfer device and driving method for the same The charge transfer device according to the present invention includes: a plurality of vertical transfer channels; a first transfer gate electrode placed at the ends of the plurality of vertical transfer channels for receiving signal charge from the plura... | 12/19/1995 |
| 5420812 | Bidirectional type CCD A bidirectional-type charge coupled device in which the directions of the signal flow can be changed by an external controlling signal.... | 05/30/1995 |
| 5402459 | Frame transfer image sensor with electronic shutter An image sensing device with electronic shutter having a semiconductor substrate of a first conductivity type and a buried channel layer of a second conductivity type disposed on the substrate. Virtual phase electrodes in the buried channel layer having t... | 03/28/1995 |
| 5315137 | Charge transfer device, process for its manufacture, and method of driving the device The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufac... | 05/24/1994 |
| 5306932 | Charge transfer device provided with improved output structure A charge transfer device in which a charge transfer section, an output gate, a floating diffused region, a reset gate electrode, a reset drain region, a barrier gate electrode and an absorption drain region are provided in semiconductor substrate. The res... | 04/26/1994 |
| 5302544 | Method of making CCD having a single level electrode of single crystalline silicon A charge coupled device (CCD) has a single level electrode of single crystalline silicon on an insulating layer over a surface of a body of single crystalline silicon. The CCD is made by forming a layer of insulating material on a surface of a body of sin... | 04/12/1994 |
| 5292680 | Method of forming a convex charge coupled device A new method of fabricating a convex charge coupled device is achieved. A silicon oxide layer is formed over the surface of a silicon substrate and patterned with a charge coupled device (CCD) electrode mask to provide openings to the silicon substrate. N... | 03/08/1994 |
| 5229630 | Charge transfer and/or amplifying device of low noise to detect signal charges at a high conversion efficiency A charge transfer and/or amplifying device includes a surface channel region of opposite conductivity type formed on the surface of a charge transfer buried channel region, a junction gate type field effect transistor formed of source and drain regions se... | 07/20/1993 |
| 5227650 | Charge coupled device delay line employing a floating gate or floating diffusion gate at its intermediate output portion The present invention is to provide a CCD delay line in which a deterioration of a charge transfer efficiency can be reduced by maintaining a charge amount treated in a charge transfer section provided at the rear stage of an intermediate output section. ... | 07/13/1993 |
| 5221852 | Charge coupled device and method of producing the same A charge coupled device (CCD) has a charge storage region and a potential barrier region. The CCD includes a first layer made of a first conductivity type semiconductor, a second layer made of a second conductivity type semiconductor and provided on the f... | 06/22/1993 |
| 5070380 | Transfer gate for photodiode to CCD image sensor An image sensor formed on a P-type substrate includes a plurality of pinned diode photodiodes, a CCD shift register and a separate buried transfer gate located between each of the photodiodes and the CCD shift register. The photodetectors are arranged in ... | 12/03/1991 |
| 5024963 | Method of fabricating a BCCD channel with stair-case doping by self-alignment This invention relates to a method of forming a charge coupled device (CCD) channel which has a trench-type multi-potential profile. To form the multi-potential profile, ion implantation is performed several times with a self-alignment mask using a polysi... | 06/18/1991 |
| 4994875 | Virtual phase charge transfer device A uniphase, buried-channel, semiconductor charge transfer device wherein a portion of each cell includes an inversion layer, or "virtual electrode" at the semiconductor surface, shielding that region from any gate-induced change in potential. Each cell is... | 02/19/1991 |
| 4906584 | Fast channel single phase buried channel CCD A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and th... | 03/06/1990 |
| 4812887 | Charge-coupled device The invention relates to a charge-coupled device with bulk transport (PCCD or BCCD), in which the lateral boundary is formed by zones (6) of the same type as and having a lower concentration than the charge transport channel. The potential barriers necess... | 03/14/1989 |
| 4807005 | Semiconductor device The present invention involves a semiconductor device, such as a shift register, wherein information in the form of charge carriers is moved laterally through the bulk of a semiconductor layer by means of an electric field, while the charge carriers are s... | 02/21/1989 |
| 4742016 | Method of manufacture of a two-phase CCD The fabrication of a two-phase buried channel silicon CCD involves the use of arsenic diffusion out of selected regions of an overlying oxide layer into selected portions of a buried channel in the underlying silicon intended to serve as the storage regio... | 05/03/1988 |
| 4725872 | Fast channel single phase buried channel CCD A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and th... | 02/16/1988 |
| 4667213 | Charge-coupled device channel structure A buried-channel charge-coupled device includes a substrate of semiconductor material of one conductivity type having therein and along a surface thereof a major channel region of the opposite conductivity type and at least one supplemental channel region... | 05/19/1987 |
| 4665420 | Edge passivated charge-coupled device image sensor A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of th... | 05/12/1987 |
| 4594604 | Charge coupled device with structures for forward scuppering to reduce noise A charge coupled device incorporates a P+ region which may be forward biased with respect to the channel to provide PNP transistor action with the channel acting as the base region at first times and at other times the P+ region is reverse biased, permitt... | 06/10/1986 |
| 4586010 | Charge splitting sampler systems Methods and apparatus for high speed signal sampling and recording utilizing mutual repulsion field-induced splitting of charge carriers in a charge transfer channel.... | 04/29/1986 |
| 4546368 | Charge transfer device having a precisely controlled injection rate An input part of a charge transfer device includes first, second and third gate electrodes on a semiconductor substrate. The first gate electrode is located close to a charge injection region but far from a shift register part. The third gate electrode is... | 10/08/1985 |
| 4412343 | Charge transfer circuits with dark current compensation Dark current compensation is obtained in a charge transfer circuit such as a charge coupled device (CCD) delay line by subtracting from each charge packet, after each predetermined number of shifts of that charge packet, a certain amount of charge. In a p... | 10/25/1983 |
