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| Number | Title | Issue Date |
| 7057302 | Static random access memory A static random access memory has first and second complementary field-effect transistors. The first complementary field-effect transistor includes a semiconductor substrate, a first field-effect transistor of electron conduction type which has a first drain region ... | 06/06/2006 |
| 6649442 | Fast line dump structure for solid state image sensor The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a ... | 11/18/2003 |
| 6639259 | Charge-coupled device The invention relates to a CCD of the buried-channel type comprising a charge-transport channel in the form of a zone (12) of the first conductivity type, for example the n-type, in a well (13) of the opposite conductivity type, in the example the p-type.... | 10/28/2003 |
| 6590238 | Image sensor having a capacitance control gate for improved gain control and eliminating undesired capacitance A charge-coupled device includes a plurality of cells for forming the charge-coupled device, each of the cells capable of retaining charge a transfer mechanism within the charge-coupled device for moving charge through the plurality of cells, an output re... | 07/08/2003 |
| 6563149 | Solid-state imaging device Signal charges generated by a plurality of photoelectric conversion elements are transferred to first and second horizontal charge transfer registers via corresponding vertical charge transfer registers. The first and second horizontal charge transfer reg... | 05/13/2003 |
| 6541805 | Solid-state image pickup device In the production of an IT-CCD including many photoelectric converters in columns and rows, vertical transfer CCDs for transferring signal charge accumulated in the photoelectric converters to a horizontal transfer CCD, and readout gate regions to control... | 04/01/2003 |
| 6521920 | Solid state image sensor A solid state image sensor is provided with a primary first-conductivity-type semiconductive region which serves as a charge storage region of a photo-sensing area and a secondary first-conductivity-type semiconductive region for enlarging a charge c... | 02/18/2003 |
| 6507056 | Fast line dump structure for solid state image sensor The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a ... | 01/14/2003 |
| 6496223 | Solid-state image sensor A solid-state image sensor in which an interface area between a vertical charge coupled device (VCCD) and a horizontal charge coupled device (HCCD) is formed under the HCCD, thereby maximizing charge-transferring efficiency is disclosed, including a subst... | 12/17/2002 |
| 6392260 | Architecture for a tapped CCD array A charge coupled device includes first and second pluralities of column registers and first and second register segments. The first plurality of column registers are splayed with respect to and on one side of a column direction line, and the second plural... | 05/21/2002 |
| 6310369 | Charge-to-voltage converter with adjustable conversion factor In a floating diffusion output type or a floating gate output type charge-to-voltage converter, the floating diffusion or the floating gate is coupled to one or more diffusion regions by means of one or more switch elements, and such elements are selectiv... | 10/30/2001 |
| 6243135 | Solid state imaging device having overflow drain region A solid state imaging device of the present invention includes a photoelectric convert part, a vertical charge transfer part, a horizontal charge transfer part, an unnecessary charge expelling region. A channel region of the horizontal charge transfer par... | 06/05/2001 |
| 6201268 | Output structure of charge-coupled device and method for fabricating the same A charge-coupled device has a first P-type well layer which forms a charge transfer section and a second P-type well layer which forms a floating diffusion layer section and within which the first P-type well layer is formed. The second P-type well layer ... | 03/13/2001 |
| 6194242 | Fabrication of solid-state imaging device having no transfer error of the signal charge from vertical horizontal charge-transfer section A solid-state imaging device that prevents the transfer errors of the signal charges from vertical charge-transfer sections to a horizontal charge-transfer section. A first plurality of buried channel regions in vertical charge-transfer sections are conne... | 02/27/2001 |
| 6191440 | Charge transfer device with improved charge detection sensitivity In a charge transfer device, a floating gate is provided in an insulating film which is provided on a charge transfer channel layer. A buffer amplifier is connected with the floating gate, and detects signal charges in the charge transfer channel layer to... | 02/20/2001 |
| 6177692 | Solid-state image sensor output MOSFET circuit There is provided a solid-state image sensor including (a) a photoelectric converter which converts light into electric charges, (b) a transfer section which transfers the electric charges, (c) a floating diffusion layer which converts the transferred ele... | 01/23/2001 |
| 6157053 | Charge transfer device and method of driving the same There is provided a charge transfer device including (a) a charge transfer channel for transferring signal charges therethrough, (b) a floating diffusion region for accumulating therein charges transferred from the charge transfer channel, (c) a field eff... | 12/05/2000 |
| 6114717 | Solid-state imaging device having no transfer error of the signal charges from vertical horizontal charge-transfer section A solid-state imaging device that prevents the transfer errors of the signal charges from vertical charge-transfer sections to a horizontal charge-transfer section. A first plurality of buried channel regions in vertical charge-transfer sections are conne... | 09/05/2000 |
| 5949099 | Solid-state image sensing device and its driving method It is an object of the present invention to provide a solid-state image sensing device with a vertical shutter structure allowing the size of the solid-state image sensing device with ease. An electric-charge exhausting unit is provided on the same side o... | 09/07/1999 |
| 5912482 | Solid-state image pickup device capable of reducing fixed pattern noise and preventing smear In a solid-state image pickup device having photoelectric converting sections, vertical charge transfer sections, and a horizontal charge transfer section, the vertical charge transfer sections include first, second, and third vertical charge transfer ele... | 06/15/1999 |
| 5905256 | Imaging device including output amplifier circuit having variable GAIN BANDWIDTH PRODUCT An imaging device of the present invention comprises driver transistors 231 through 23n and load transistors 241 through 24n. The imaging device has a switch switching output of the driver transistor 23n-1 to ou... | 05/18/1999 |
| 5892251 | Apparatus for transferring electric charges A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair ... | 04/06/1999 |
| 5818075 | Charge transfer device A charge transfer device comprising charge transfer means for transferring charges, a floating diffusion layer for accumulating the charges transferred from said charge transfer means, a floating gate electrode formed on said floating diffusion layer via ... | 10/06/1998 |
| 5640028 | Charge transfer device with reduced parasitic capacitances for improved charge transferring A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate... | 06/17/1997 |
| 5621230 | Low capacitance floating diffusion structure for a solid state image sensor A method for producing a low capacitance floating diffusion structure used for charge to voltage conversion in a solid state image sensor having an output amplifier provided with a gate electrode, comprising the steps of: (a) growing a gate oxide on a sub... | 04/15/1997 |
| 5614740 | High-speed peristaltic CCD imager with GaAs fet output An improved CCD imaging array is disclosed which is capable of operating at 10,000 frames-per-second. The imager consists of an array of 512×512 pixels having 16 serial output channels which provides a composite output data rate up to 250 Megasamples/sec... | 03/25/1997 |
| 5612554 | Charge detection device and driver thereof In a charge detection device of a charge coupled device, an unnecessary overlap between a floating gate and other gates are reduced. A gate of a source follower amplifier is also formed in an active region. Further, the floating gate is connected to a gat... | 03/18/1997 |
| 5593910 | Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device A charge detection device for converting a signal charge consisting of carriers of a first polarity externally provided into a voltage signal, the charge detection device comprising a MOS transistor, the MOS transistor including: a first semiconductor lay... | 01/14/1997 |
| 5583071 | Image sensor with improved output region for superior charge transfer characteristics The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases... | 12/10/1996 |
| 5572051 | Solid state image sensing device A solid state image sensing device, comprises: an n-type semiconductor substrate (11), a p-type well (12) formed on a surface of the semiconductor substrate, and a p+ -type diffusion layer (13, 21) having an impurity concentration higher than t... | 11/05/1996 |
| 5569616 | Process for forming an output circuit device for a charge transfer element having tripartite diffusion layer An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage and a method of forming same. A first diffusion region is formed by diffusing into the semiconductor body... | 10/29/1996 |
| 5539226 | Charge transfer device having an output gate electrode extending over a floating diffusion layer A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate... | 07/23/1996 |
| 5536956 | Charge transfer device with reduced parasitic capacitances for improved charge transferring A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate... | 07/16/1996 |
| 5524036 | Charge transfer device having charge injection source for reset drain region A charge transfer device having an improved signal stage is disclosed. This stage includes a floating region formed in a semiconductor layer and receiving signal charges from a charge transfer stage, a reset drain region formed in the semiconductor layer ... | 06/04/1996 |
| 5516714 | Method of making output terminal of a solid-state image device A solid-state image device for outputting the charges transferred in one direction by given transfer clock is disclosed. It has a detection port for finally providing signal charges, a first active region of first conductivity for receiving the transferre... | 05/14/1996 |
| 5514886 | Image sensor with improved output region for superior charge transfer characteristics The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases... | 05/07/1996 |
| 5498887 | Output circuit device for a charge transfer element having tripartite diffusion layer A first diffusion layer in which phosphor of a low concentration is diffused is formed in a semiconductor body, and a second diffusion layer in which arsenic or antimony of a high concentration is formed in a portion of the upper face of the first diffusi... | 03/12/1996 |
| 5495116 | High sensitivity, broad band charge detecting apparatus with suppression of mixing of noise An electric charge detecting apparatus comprising vertical CCD, horizontal CCD and floating diffusion amplifier comprised of floating diffusion layer and source follower amplifier comprising a MOS transistor wherein a buffer electrode is arranged at one e... | 02/27/1996 |
| 5491354 | Floating gate charge detection node The charge coupled device charge detection node includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type in the substrate; virtual gate regions of the first conductivity type formed in t... | 02/13/1996 |
| 5477070 | Drive transistor for CCD-type image sensor A charge-coupled device type image sensor having a floating diffusion-type amplifier including a drive transistor comprising a substrate, a drain region, a source region, a depletion channel region formed between the drain and source regions in contact wi... | 12/19/1995 |
