Class 257/E29.229 - With field effect produced by insulated gate (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.228. This subclass
No. of patents: 38
Last issue date: 04/15/2008

Number	Title	Issue Date
7358577	High voltage field effect transistor A high voltage field effect transistor according to the present invention has: a p-type low concentration drain region and a low concentration source region formed on both sides of a channel formation region within a n-type region of a semiconductor substrate; a hig...	04/15/2008
6441409	Dual-line type charge transfer device A charge transfer device which comprises vertical charge transfer devices which transfer charges in the vertical direction, first and second horizontal charge transfer devices which transfer the charges from the vertical charge transfer devices in the hor...	08/27/2002
6312970	Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs...	11/06/2001
6194749	CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs...	02/27/2001
6188092	Solid imaging device having an antifuse element and method of making the same A solid imaging device including a substrate voltage generating device possessing high display quality, high reliability, and method of manufacturing. The solid imaging device includes a plurality of photoelectric conversion elements, a vertical charge tr...	02/13/2001
6165908	Single-layer-electrode type charge coupled device having double conductive layers for charge transfer electrodes In a charge coupled device, a plurality of charge transfer electrodes are formed on a first insulating layer formed on a semiconductor substrate. Each of the charge transfer electrodes is formed by a first conductive layer and a second conductive layer na...	12/26/2000
6133596	Near complete charge transfer device A charge transfer structure (30) includes a substrate comprised of semiconductor material and, coupled to a surface of the substrate, a plurality of serially coupled devices each having a gate terminal. The plurality of serially coupled devices include a ...	10/17/2000
5347140	Resonant electron transfer device A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than th...	09/13/1994
5345099	Semiconductor device In a CCD device, on a semiconductor substrate, and in the insulation films, plural first semiconductor regions and plural second semiconductor regions are formed buried in the insulation films, intermediating a tunneling insulation film therebetween in a ...	09/06/1994
5325106	Analog driver for scrollable spatial light modulator A scrollable spatial light modulator--or SLM--provides non-destructively transfer and display of an analog signal, which may include multiple levels of gray scale information, for high speed analog optical processing. Each pixel in the scrollable SLM cons...	06/28/1994
5309005	Charge transfer device having a bent transfer channel A charge transfer device has a transfer section for transferring a signal charge along a transfer channel, and a pickup section connected to the transfer section for converting the signal charge received from the transfer section to a voltage signal, both...	05/03/1994
5289017	Solid state imaging device having silicon carbide crystal layer A solid state imaging device of claim 1, wherein the silicon carbide crystal layer is formed on a silicon substrate such that the insulating film is interposed between said silicon carbide crystal layer and said silicon substrate. Since the charge transfe...	02/22/1994
5055900	Trench-defined charge-coupled device A charge-coupled device (CCD) is formed by first defining relatively deep trenches having relatively small lateral dimensions in the surface of a silicon bulk region. A relatively thin silicon dioxide layer is formed over the silicon surface and inside ea...	10/08/1991
4967249	Gain compression photodetector array An improved gain compression device is disclosed, especially for use in charge-coupled devices. The device is preferably constructed on a semiconductor substrate and includes a first potential well in close proximity to a mobile charge packet generation r...	10/30/1990
4903098	Charge-coupled device The invention relates to a charge-coupled device with an adjustable charge transport route having at least two ccd segments, which can be connected in series with each other by means of a switchable connection. This connection includes an output diode for...	02/20/1990
4888633	Charge transfer device having a buried transfer channel with higher and lower concentrations A charge transfer device comprising a semiconductor body including a first conductivity type region and a second conductivity region which defines a charge transfer channel below a major surface of the semiconductor body. An insulative layer is provided o...	12/19/1989
4878102	Charge-coupled device A charge-coupled device comprising two clock electrodes (4,5) on the two opposite sides of the charge transport channel (3) and which extend the entire length of the channel. Charge storage regions (6-9) are located zigzagwise on both sides of the channel...	10/31/1989
4821081	Large pitch CCD with high charge transfer efficiency A CCD structure wherein the patterned well implant and/or patterned barrier implant geometries are modified to exploit two dimensional potential modification effects to induce potential gradation along the length of the CCD pixel. Preferably these geometr...	04/11/1989
4760273	Solid-state image sensor with groove-situated transfer elements Grooves 8a are formed on a main surface of a semiconductor substrate 8 and a vertical charge transfer element is formed on a side wall of each groove 8a. As a result, the areas occupied by the vertical charge transfer elements on the main surface of the s...	07/26/1988
4749659	Method of manufacturing an infrared-sensitive charge coupled device A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a storage layer. The layers are fixed to a supporting plate ...	06/07/1988
4716580	Charge transfer analog comparator and devices using such a comparator A charge transfer analog comparator comprising two adjacent MIS capacities coupled together by a passage gate and connected respectively to the input and to the output of an amplifier as well as the means for initializing the comparison connected to the i...	12/29/1987
4639678	Absolute charge difference detection method and structure for a charge coupled device Two unknown charge packets are stored in adjacent potential wells of equal depth in a charge coupled device. The charge packets are then merged by changing the potential on an intermediate merge electrode to remove a potential barrier between the two well...	01/27/1987
4589005	Charge transfer device having improved electrodes A charge transfer device in which a number of transfer electrodes, comprised of alternating main electrodes and auxiliary electrodes, are formed on but insulated from a channel region in a semiconductor substrate for transferring charges. The transfer ele...	05/13/1986
4574295	Charge coupled device having meandering channels A charge coupled device transfers a charge via a meandering route in a channel having at least one bend. The selected channel bending angle has a maximum of two right angles, or 180°. When the channel bending angle is less than 180°, the channel may be ...	03/04/1986
4562452	Charge coupled device having meandering channels A charge coupled device transfers a charge via a meandering route in a channel having at least one bend. The selected channel bending angle has a maximum of two right angles, or 180°. When the channel bending angle is less than 180°, the channel may be ...	12/31/1985
4402014	Circuit arrangement for discharging a capacity MOS switch is provided, in particular for a camera, with which within the line flyback time the whole optically generated signal can be transferred by periodically transferring back a fixed quantity of charge from the drain to the source....	08/30/1983
4389615	CCD Demodulator circuit A semiconductor integrated circuit using charged coupled device (CCD) technology for performing demodulation of time-varying signals which have been phase or amplitude modulated. The CCD circuit performs a sampling of the time-varying signal at a suitable...	06/21/1983
4374334	Signal comparator apparatus A first surface charge transistor and a second surface charge transistor are provided in a common substrate. During a first phase of a cycle of operation a first voltage signal is applied to the transfer gate of the first transistor and a second voltage s...	02/15/1983
4301191	Method of providing a conductor layer pattern having parts which are present at a small separation in the manufacture of semiconductor devices A method is set forth for providing on a substrate surface a conductor pattern having portions which are present at a mutual separation distance smaller than 10 microns by directed deposition of the material for the conductor portions in different directi...	11/17/1981
4284907	Charge transfer filter A charge transfer filter utilizing a charge transfer accumulator structure for exponential smoothing of sampled data signals is described. The charge transfer accumulator structure performs charge equilibration at high speed thereby enabling an exponentia...	08/18/1981
4245199	Semiconductor CCD transversal filter with controllable threshold level A filter in the form of a semiconductor charge coupled device (CCD) split electrode transveral filter section (10) of many transfer stages, typically of the order of 150, is characterized by a controllable detection threshold level by means of the additio...	01/13/1981
4156858	Charge transfer transversal filter A transversal filter of the split electrode type employing a bucket-brigade device (BBD) is described. The BBD wells extend beyond the edges of the clocked gates of the BBD below second gates of different areas. These mask programmed second gates provide ...	05/29/1979
4070667	Charge transfer analog-to-digital converter A charge transfer analog-to-digital converter is described wherein an analog signal is converted to a digital equivalent thereof in a structure suitable to be implemented in MOS form. A dual slope technique is employed wherein the digital output is the ra...	01/24/1978
4017883	Single-electrode charge-coupled random access memory cell with impurity implanted gate region A charge-coupled random access memory cell is formed in a semiconductor body divided into three adjacent regions. The first region has an impurity diffused therein and serves alternately as a source and a drain for charge carriers. The second or gate regi...	04/12/1977
4014036	Single-electrode charge-coupled random access memory cell A charge-coupled random access memory cell is formed in a semiconductor body divided into three adjacent regions. The first region has an impurity diffused therein and serves alternately as a source and a drain for charge carriers. The second or gate regi...	03/22/1977
3989956	Charge transfer binary counter A two-phase charge transfer binary counter capable of counting the number of signal pulses in a particular time interval is described. The counter includes a charge storage medium in which is formed at least one charge storage "Q-cell" adapted to quantize...	11/02/1976
3953745	Charge transfer device signal processing system An improved charge transfer device signal processing system is disclosed. In one aspect of the invention the signal at each node of a bucket brigade delay line is detected to provide a continuous output signal over a major portion of a cycle of a multipha...	04/27/1976
3950188	Method of patterning polysilicon A semiconductor substrate is coated with an insulating film followed by a layer of polysilicon. The polysilicon layer is coated with a non-oxidizable mask, such as silicon nitride, and then oxidized to convert the exposed regions to silicon oxide and add ...	04/13/1976

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Class 257/E29.229 - With field effect produced by insulated gate (EPO)