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| Number | Title | Issue Date |
| 7442976 | DRAM cells with vertical transistors The invention includes a semiconductor structure having U-shaped transistors formed by etching a semiconductor substrate. In an embodiment, the source/drain regions of the transistors are provided at the tops of pairs of pillars defined by crossing trenches in the s... | 10/28/2008 |
| 7439581 | Transistors, semiconductor integrated circuit interconnections and methods of forming the same Provided are transistors, semiconductor integrated circuit interconnections and methods of forming the same. The transistors, semiconductor integrated circuit interconnections and methods of forming the same may improve electrical characteristics between gate electr... | 10/21/2008 |
| 7439579 | Power semiconductor with functional element guide structure A trench transistor is described. In one aspect, the trench transistor has a cell array having a plurality of cell array trenches and a plurality of mesa zones arranged between the cell array trenches, and a semiconductor functional element formed in one of the mesa... | 10/21/2008 |
| 7423317 | Split electrode gate trench power device A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners. ... | 09/09/2008 |
| 7408224 | Vertical transistor structure for use in semiconductor device and method of forming the same According to some embodiments, a structure of vertical transistor includes gate electrodes distanced by a predetermined interval in an active region, formed in a vertical shape to have a predetermined depth from a top surface of a semiconductor substrate. A gate ins... | 08/05/2008 |
| 7393749 | Charge balance field effect transistor A field effect transistor is formed as follows. A semiconductor region of a first conductivity type with an epitaxial layer of a second conductivity extending over the semiconductor region is provided. A trench extending through the epitaxial layer and terminating i... | 07/01/2008 |
| 7388254 | MOS-gated device having a buried gate and process for forming same An improved trench MOS-gated device comprises a monocrystalline semiconductor substrate on which is disposed a doped upper layer. The upper layer includes at an upper surface a plurality of heavily doped body regions having a first polarity and overlying a drain reg... | 06/17/2008 |
| 7385248 | Shielded gate field effect transistor with improved inter-poly dielectric A field effect transistor (FET) includes a trench extending into a silicon region of a first conductive type. A shield insulated from the silicon region by a shield dielectric extends in a lower portion of the trench. A gate electrode is in the trench over but insul... | 06/10/2008 |
| 7372088 | Vertical gate semiconductor device and method for fabricating the same A source region is formed by performing ion implantation plural times to diffuse an impurity from the upper surface of a semiconductor region toward a region far dawn therefrom and to increase impurity concentration in the vicinity of the upper surface of the semico... | 05/13/2008 |
| 7361954 | Power semiconductor device Disclosed is a power semiconductor device, including: a gate electrode having a cross section having a length in a vertical direction, and having a shape extending in a direction orthogonal to the cross section; a gate insulating film surrounding the gate electrode;... | 04/22/2008 |
| 7358565 | Semiconductor device having improved insulated gate bipolar transistor and method for manufacturing the same An n-type first base layer is formed on a semiconductor substrate 1 having a first major surface and a second major surface, and a p-type second base layer is formed thereon. Between the first base layer and the second base layer, a carrier stored layer is fo... | 04/15/2008 |
| 7335946 | Structures of and methods of fabricating trench-gated MIS devices In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact bet... | 02/26/2008 |
| 7332772 | Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same A semiconductor device, having a recessed gate and asymmetric dopant regions, comprises a semiconductor substrate having a trench with a first sidewall and a second sidewall, the heights of which are different from each other, a gate insulating layer pattern dispose... | 02/19/2008 |
| 7332397 | Method for fabricating semiconductor device A method for fabricating a semiconductor device includes forming a doped polysilicon layer on a semiconductor substrate forming an oxide film for device isolation in a predetermined region of the doped polysilicon layer and the semiconductor substrate, forming an et... | 02/19/2008 |
| 7319257 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 01/15/2008 |
| 7319256 | Shielded gate trench FET with the shield and gate electrodes being connected together A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. The trench extends in an active region of the FET, a... | 01/15/2008 |
| 7279743 | Closed cell trench metal-oxide-semiconductor field effect transistor Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body regi... | 10/09/2007 |
| 7262430 | Organic photocurrent multiplication device Organic semiconductor layers (2, 4) are laminated sandwiching an insulator thin layer (3), and translucent electrodes (1, 5) are formed on the surfaces of the organic semiconductor layers (2, 4), respectively. While a voltage is applied s... | 08/28/2007 |
| 7253473 | Semiconductor device and method of manufacturing the same A semiconductor device includes: a semiconductor substrate of the first-type; a semiconductor region of the first-type formed on the substrate; a gate electrode a part of which is present within a trench selectively formed in part of the semiconductor region, and an... | 08/07/2007 |
| 7235842 | Insulated gate power semiconductor devices A trench-gate semiconductor device (100) has a trench network (STR1, ITR1) surrounding a plurality of closed transistor cells (TCS). The trench network comprises segment trench regions (STR1) adjacent sides of the transistor cells (TCS) a... | 06/26/2007 |
| 7211837 | Insulated gate semiconductor device A CSTBT includes a carrier stored layer (113) formed between a P base region (104) and a semiconductor substrate (103) and the carrier stored layer has an impurity concentration higher than that of the semiconductor substrate (103). The P... | 05/01/2007 |
| 7211861 | Insulated gate semiconductor device An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate l... | 05/01/2007 |
| 7205605 | Semiconductor component and method of manufacturing A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component als... | 04/17/2007 |
| 7183609 | Semiconductor devices and methods for fabricating the same Semiconductor devices and methods for fabricating the same are disclosed. A disclosed method includes forming a trench in a region where a main gate pattern is to be formed, forming an insulating film having a fixed thickness in the trench, and fixing a scale of the... | 02/27/2007 |
| 7176521 | Power semiconductor device A power semiconductor device comprises a semiconductor layer; a polysilicon-containing gate; a first semiconductor region formed in said semiconductor layer at one surface of said semiconductor layer and operative to serve as at least one of a source region and an e... | 02/13/2007 |
| 7161208 | Trench mosfet with field relief feature A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing. ... | 01/09/2007 |
| 7119384 | Field effect transistor and method for fabricating it The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channe... | 10/10/2006 |
| 7112843 | Semiconductor device with low resistance region A method for manufacturing a semiconductor device including the steps of: forming a hole having a predetermined depth in a semiconductor layer of a first conductivity type in correspondence with a drain region, the semiconductor layer being formed on a semiconductor... | 09/26/2006 |
| 6700157 | Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an... | 03/02/2004 |
| 6696323 | Method of manufacturing semiconductor device having trench filled up with gate electrode In a semiconductor device, a p-type base region is provided in an n- -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+ -type source region extends in the ... | 02/24/2004 |
| 6683346 | Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge The cellular structure of the power device includes a substrate that has a highly doped drain region. Over the substrate there is a more lightly doped epitaxial layer of the same doping. Above the epitaxial layer is a well region formed of an opposite typ... | 01/27/2004 |
| 6683343 | High voltage semiconductor device having two buffer layer In an IGBT, an n buffer layer is formed under an n- high resistance layer in which a MOS gate structure is formed. An n+ buffer layer is formed between the n buffer layer and a p+ drain layer. Since the p+ drain... | 01/27/2004 |
| 6683331 | Trench IGBT An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P- base region which is about 7 microns deep. A deep narrow N+ emitter diffusion is at the t... | 01/27/2004 |
| 6673681 | Process for forming MOS-gated power device having segmented trench and extended doping zone A process for constructing a trench MOS-gated device includes: forming in a semiconductor substrate an extended trench that comprises an upper segment and a bottom segment, wherein the bottom segment has a lesser width relative to a greater width of the t... | 01/06/2004 |
| 6670658 | Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type ... | 12/30/2003 |
| 6664591 | Insulated gate semiconductor device An insulated gate semiconductor device includes a first base layer of a first conduction type; a second base layer of a second conduction type formed on a first surface of the first base layer; a source layer of the first conduction type selectively forme... | 12/16/2003 |
| 6661036 | Semiconductor switches with evenly distributed fine control structures Semiconductor structure configured as a semiconductor switch that can be used in various forms to switch currents. Semiconductor switch comprising non-doped or very lightly doped semiconductor crystal for switching currents in at least one direction at hi... | 12/09/2003 |
| 6661054 | Semiconductor device and method of fabricating the same A gate electrode is provided to fill up a trench while covering its opening. Assuming that WG represents the diameter (sectional width) of a head portion of the gate electrode located upward beyond a P-type base layer and an... | 12/09/2003 |
| 6656774 | Method to enhance operating characteristics of FET, IGBT, and MCT structures Doping of the P type base region in a MOSFET or an IGBT with a combination of boron and one or more of indium, aluminum and gallium, provides a structure having a lower P type doping level in the channel portion of the structure than in the remainder of t... | 12/02/2003 |
| 6650001 | Lateral semiconductor device and vertical semiconductor device A lateral semiconductor device includes an n-type buffer layer (15) selectively formed in the surface of an n-type base layer (14), a p-type drain layer (16) selectively formed in the surface of the n-type buffer layer (15), a p-type base layer (17) forme... | 11/18/2003 |
