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Mouse device with a built-in printer
A mouse device for use as an input device of a computer is provided that includes a housing in which recording paper is loadable, and a printer unit provided within the housing for printing on the recording paper print information received from the computer.
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| Number | Title | Issue Date |
| 6573527 | Quantum semiconductor device including quantum dots and a fabrication process thereof A quantum semiconductor device includes intermediate layers of a first semiconductor crystal having a first lattice constant and stacked repeatedly, and a plurality of quantum dots of a second semiconductor crystal having a second lattice constant differe... | 06/03/2003 |
| 6465804 | High power bipolar transistor with emitter current density limiter A heterojunction bipolar transistor (HBT) having an emitter structure capable of reducing the current crowding effect and preventing thermal instabilities is disclosed, wherein a negative differential resistance. (NDR) element is added to the layer struct... | 10/15/2002 |
| 6118136 | Superlatticed negative-differential-resistance functional transistor The invention is to develop a high-speed low power consumption resonant tunneling element--a superlatticed negative-differential-resistance (NDR) functional transistor. The proposed element exhibits amplification and obvious NDR phenomena simultaneously. ... | 09/12/2000 |
| 5981986 | Semiconductor device having a heterojunction A semiconductor device comprises a first semiconductor layer formed of a Group III-V semiconductor layer or a II-VI semiconductor layer; and a second semiconductor layer formed of a Group IV semiconductor layer or a Group II-VI semiconductor layer which i... | 11/09/1999 |
| 5920231 | Negative differential resistance amplifier There is provided a negative differential resistance amplifier comprising a negative differential resistance transistor having negative input conductance by utilizing resonant tunneling effect. The transistor is electrically connected to a signal source c... | 07/06/1999 |
| 5828077 | Long-period superlattice resonant tunneling transistor A new high-speed resonant tunneling device, namely, a long-period superlattice resonant tunneling transistor, is developed according to the invention. The structure of the proposed 20-period superlattice resonant tunneling transistor consists of an InP su... | 10/27/1998 |
| 5825048 | Semiconductor functional device and electronic circuit provided with the same A semiconductor functional device includes a semi-insulating semiconductor substrate; a resonant tunneling structure which includes, on the substrate, an n-type collector layer, an epitaxial multilayer structure including a double barrier structure consti... | 10/20/1998 |
| 5773842 | Resonant-tunnelling hot electron transistor A resonant-tunnelling hot transistor includes buffer layers undoped with impurities on either side of a collector or an emitter potential barrier having a quantum well structure. When a voltage is applied to the transistor, most of the potential drop occu... | 06/30/1998 |
| 5770869 | Resonant tunneling hot electron device A resonant tunneling hot electron device uses an interband tunneling double barrier structure as an electron injection layer and is capable of increasing PVR and peak current using an enhanced resonant interband tunneling effect through alignment of a hol... | 06/23/1998 |
| 5705825 | Resonant tunneling bipolar transistor Excellent negative resistance characteristics are attained in a resonant bipolar transistor (RBT) while improving current gain. A first conduction type collector layers and the opposite conduction type base layer are sequentially formed on a semiconductor... | 01/06/1998 |
| 5629215 | Method of fabricating and contacting ultra-small three terminal semiconductor devices Ultra-small three terminal semiconductor devices and a method of fabrication including patterning the planar surface of a substrate and a control layer to form a first and second pattern edge and consecutively forming a plurality of layers of semiconducto... | 05/13/1997 |
| 5606178 | Bipolar resonant tunneling transistor Base contacts are made to one or both barrier layers of a resonant tunneling bipolar transistor, rather than to the quantum well. This is made possible with the use of a type II rather than a type I energy band alignment in the active region.... | 02/25/1997 |
| 5554860 | Resonant tunneling transistor noise generator This is a method of generating noise comprising the step of switching a plurality of resonant tunneling diodes each located in the emitter or base of a multi finger transistor such that each of the resonant tunneling diodes switches at a different input v... | 09/10/1996 |
| 5489785 | Band-to-band resonant tunneling transistor A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling... | 02/06/1996 |
| 5389798 | High-speed semiconductor device with graded collector barrier A high-speed semiconductor device includes an emitter layer serving as an injection source of hot electrons and a collector barrier layer disposed between a base layer and a collector layer. The potential profile of the collector barrier layer gradually v... | 02/14/1995 |
| 5389804 | Resonant-tunneling heterojunction bipolar transistor device A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face... | 02/14/1995 |
| 5349202 | Tunneling transistor A tunneling transistor comprising an emitter layer, a barrier layer having a conduction band higher in energy than a conduction band of said emitter layer and a valence band lower in energy than a valence band of said emitter layer, and further having a t... | 09/20/1994 |
| 5280182 | Resonant tunneling transistor with barrier layers According to this invention, a resonant tunneling transistor includes a first semiconductor layer having an n-type conductivity and serving as a collector layer, a second semiconductor layer having a p-type conductivity and serving as a base layer, a thir... | 01/18/1994 |
| 5270225 | Method of making a resonant tunneling semiconductor device A resonant tunneling semiconductor device having two large bandgap barrier layers (12, 14) separated by a quantum well (13) is provided. The two barriers (12,14) and the quantum well (13) are formed between first and second semiconductor layers (11, 16) o... | 12/14/1993 |
| 5179037 | Integration of lateral and vertical quantum well transistors in the same epitaxial stack An epitaxial stack (10) is provided that allows integration of both vertical and horizontal quantum effect devices. Epitaxial stack (10) allows fabrication of both quantum well resonant tunneling transistors (27) and Stark-effect transistors (34), thus al... | 01/12/1993 |
| 5153693 | Circuit including bistable, bipolar transistor A bipolar transistor which is inherently bistable, is disclosed. This bipolar transistor has a structure such that the corresponding band diagram includes a first potential barrier within the collector, at or adjacent the base-collector interface. In addi... | 10/06/1992 |
| 5151618 | Resonant-tunneling heterojunction bipolar transistor device A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face... | 09/29/1992 |
| 5138408 | Resonant tunneling hot carrier transistor A resonant tunneling hot carrier transistor according to the present invention is provided with a first multiple-layer structure provided on a substrate and having a first collector layer, a first collector barrier layer, a first base layer and a first qu... | 08/11/1992 |
| 5132746 | Biaxial-stress barrier shifts in pseudomorphic tunnel devices Resonant tunneling devices having improved peak-to-valley current ratios are disclosed. The resonant tunneling device comprises a quantum well layer surrounded by first and second barrier layers, the first and second barrier layers being comprised of an i... | 07/21/1992 |
| 5113231 | Quantum-effect semiconductor devices A novel combination of semiconductor heterojunctions provide a quantum-effect device with resonant or enhanced transmission of electrons (or holes) due to tunneling into a quantum well state in the valence (or conduction) band. A particular heterostructur... | 05/12/1992 |
| 5111265 | Collector-top type transistor causing no deterioration in current gain The collector-top type transistor according to the present invention has at least principal semiconductor layers of an emitter layer, tunnel barrier layers having electron affinities smaller than those of the emitter and a base, the base layer, and a coll... | 05/05/1992 |
| 5031005 | Semiconductor device A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of |Ec3 -Ec1 |.apprxeq.|Ev3 -Ev5 |, where Ec3 is a resonant en... | 07/09/1991 |
| 5027179 | Resonant-tunneling heterojunction bipolar transistor device A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer, a base layer, a collector layer facing the base layer to form a PN junction at the interface betwee... | 06/25/1991 |
| 5024958 | Compound semiconductor device and a manufacturing method thereof A high-speed compound semiconductor device includes semiconductor layers of a group III-V alloy laminated in a vertical direction. The device uses a base electrode that contacts side walls and covers a step portion of a base layer. The device includes an ... | 06/18/1991 |
| 5003366 | Hetero-junction bipolar transistor The present invention provides a hetero-junction bipolar transistor (HBT) whichis so designed that the emitter injection efficiency is improved, the base transit time and base resistance are reduced and yet the lowering of the collector injection efficien... | 03/26/1991 |
| 4999697 | Sequential-quenching resonant-tunneling transistor A plurality of decoupled quantum wells in a transistor device enables such device to operate with multiple-peak characteristics. The device is suitable for a variety of circuit applications in switching systems and in central processor logic units and mem... | 03/12/1991 |
| 4967252 | Compound semiconductor bipolar device with side wall contact A high-speed compound semiconductor device includes semiconductor layers of a group III-V alloy laminated in a vertical direction. The device uses a base electrode that contacts side walls and covers a step portion of a base layer. The device includes an ... | 10/30/1990 |
| 4937204 | Method of making a superlattice heterojunction bipolar device A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fra... | 06/26/1990 |
| 4926232 | Resonant-tunneling bipolar transistor There is disclosed a resonant-tunneling bipolar transistor with a quantum-well comprising an inversion forming layer of an n-type gallium arsenide which is in contact with a first potential barrier layer of an undoped aluminum gallium arsenide partially d... | 05/15/1990 |
| 4866488 | Ballistic transport filter and device An energy filter for carriers in semiconductor devices and devices with such filters are disclosed. The filter is a superlattice and the filtering action arises from the subbands and gaps in the conduction and valence bands of the superlattice. A heteroju... | 09/12/1989 |
| 4849799 | Resonant tunneling transistor A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there i... | 07/18/1989 |
| 4835579 | Semiconductor apparatus A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fra... | 05/30/1989 |
| 4825264 | Resonant tunneling semiconductor device A resonant tunneling semiconductor device having a large peak-to-valley current density Jp /Jv ratio comprises an InP substrate, a first contact compound semiconductor lattice-matched to Inp, a first barrier layer of (In0.52 | 04/25/1989 |
| 4796067 | Semiconductor device having a superlattice structure A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice lay... | 01/03/1989 |
| 4792832 | Superlattice semiconductor having high carrier density The superlattice type semiconductor material has a multilayered structure of first layers of semiconductor containing impurities and having a thickness thinner than electron or hole wavelength and second layers of semiconductor free from impurities or ins... | 12/20/1988 |
