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| Number | Title | Issue Date |
| 7329941 | Creating increased mobility in a bipolar device The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressiv... | 02/12/2008 |
| 7323390 | Semiconductor device and method for production thereof The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an a... | 01/29/2008 |
| 7297993 | Bipolar transistor and fabrication method of the same A bipolar transistor having a base electrode of an air bridge structure is simplified in structure and enhanced in the degree of freedom of a contact position of a base wiring line with the base electrode. The bipolar transistor has a semiconductor mesa portion havi... | 11/20/2007 |
| 7084044 | Optoelectronic device and method of manufacture thereof The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over... | 08/01/2006 |
| 6657242 | Trench-isolated bipolar devices In order to produce an electrical connection to an inner layer such as a bottom diffusion (103), which has a good electrical conductivity and is located inside a bipolar semiconductor device isolated by trenches (119) and which for example forms a subcoll... | 12/02/2003 |
| 6355971 | Semiconductor switch devices having a region with three distinct zones and their manufacture In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accord... | 03/12/2002 |
| 6121102 | Method of electrical connection through an isolation trench to form trench-isolated bipolar devices In order to produce an electrical connection to an inner layer such as a bottom diffusion (103), which has a good electrical conductivity and is located inside a bipolar semiconductor device isolated by trenches (119) and which for example forms a subcoll... | 09/19/2000 |
| 5807780 | High frequency analog transistors method of fabrication and circuit implementation A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, l... | 09/15/1998 |
| 5668397 | High frequency analog transistors, method of fabrication and circuit implementation A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, l... | 09/16/1997 |
| 5569952 | Semiconductor device with a semiconductor element provided in a mesa structure A semiconductor device includes a semiconductor body (1) having a semiconductor element with connection points (2, 3) which adjoins a surface (4) of the semiconductor body (1) and is laterally insulated and surrounded by a first depression (5) in the surf... | 10/29/1996 |
| 5508552 | Transistors with multiple emitters, and transistors with substantially square base emitter junctions A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., thr... | 04/16/1996 |
| 5455448 | Bipolar, monolithic, high-power RF transistor with isolated top collector A high frequency, high power transistor is vertically isolated by providing a thermally conductive, electrically insulating substrate, upon which the transistor components (including collector, base, and emitter) are grown, positioned directly on the heat... | 10/03/1995 |
| 5387813 | Transistors with emitters having at least three sides A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., thr... | 02/07/1995 |
| 5374846 | Bipolar transistor with a particular base and collector regions A silicon film 9 and an N+ -type impurity region 9a are provided between a base region 11 and an epitaxial growth layer 3. A silicon oxide film 12 is provided on the inner sidewalls of an opening 16, and an N-type polycrystalline silicon film 1... | 12/20/1994 |
| 5358882 | Method for manufacturing a bipolar transistor in a substrate A method for producing a bipolar transistor completely surrounded by an insulating trench in a substrate. Insulating regions at the surface of the substrate can be produced by depositing an SiO2 layer on the basis of thermal decomposition of TE... | 10/25/1994 |
| 5318917 | Method of fabricating semiconductor device A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming firs... | 06/07/1994 |
| 5298779 | Collector of a bipolar transistor compatible with MOS technology A bipolar transistor comprising a semiconductor substrate, of a first conductivity type, a retrograde well serving as the collector and having a second conductivity type opposite to the first, a base active region having a first conductivity type, a regio... | 03/29/1994 |
| 5280188 | Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors A semiconductor device includes a bipolar transistor and an IIL element fabricated on a single wafer. The emitter region of the bipolar transistor is formed by diffusing the impurity of an impurity layer formed in contact with the base region therein. The... | 01/18/1994 |
| 5250838 | Semiconductor device comprising an integrated circuit having a vertical bipolar transistor The invention relates to an integrated circuit having a vertical transistor. According to the invention, a transistor having a current amplification ଲ considerably higher than a conventional transistor is obtained due to the fact that the emitter (5... | 10/05/1993 |
| 5221856 | Bipolar transistor with floating guard region under extrinsic base A first device region (10) of one conductivity type adjacent one major surface (1a) of a semiconductor body (1) has a relatively highly doped subsidiary region (11) spaced from the one major surface (1a) by a relatively lowly doped subsidiary region (12).... | 06/22/1993 |
| 5219768 | Method for fabricating a semiconductor device Selective ion implantation on the respective polysilicon is performed by utilizing a low temperature accelerated oxidation phenomenon in polysilicon with a high impurity concentration and the dependence of an accelerated energy of the impurity projection ... | 06/15/1993 |
| 5214302 | Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove A semiconductor integrated circuit device having a structure in which each of the following regions, that is, a first region for forming the base and emitter regions of each of the bipolar transistors, a second region for forming the collector lead-out re... | 05/25/1993 |
| 5204274 | Method of fabricating semiconductor device A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming firs... | 04/20/1993 |
| 5198372 | Method for making a shallow junction bipolar transistor and transistor formed thereby Disclosed is a process for forming a bipolar transistor at the face (22) of a semiconductor layer. A refractory metal layer (34) is deposited on the face (22) to cover a base area (38) thereof. A dopant (40) is implanted through the metal layer (34) withi... | 03/30/1993 |
| 5144408 | Semiconductor integrated circuit device and method of manufacturing the same A semiconductor device includes a bipolar transistor and an IIL element fabricated on a single wafer. The emitter region of the bipolar transistor is formed by diffusing the impurity of an impurity layer formed in contact with the base region therein. The... | 09/01/1992 |
| 5141888 | Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the... | 08/25/1992 |
| 5104816 | Polysilicon self-aligned bipolar device including trench isolation and process of manufacturing same A bipolar transistor formed on the face of a semiconductor substrate which includes an extrinsic base of a first conductivity type formed in a portion of an emitter-base region of said semiconductor. A conducting base contacting layer is formed over the e... | 04/14/1992 |
| 5098638 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device forms an intrinsic base layer by doping an impurity in the emitter polysilicon electrode into the intrinsic base region of the surface of a semiconductor substrate by heat treatment through the emitter lead... | 03/24/1992 |
| 5089873 | Integrated circuit having a vertical transistor The invention relates to an integrated circuit including a vertical transistor having an emitter having at least one zone (12), a base (2) having a base contacting region (15) adjoining a major surface of the integrated circuit, and a collector (5). The b... | 02/18/1992 |
| 5059544 | Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy Selective and non-selective epitaxial growth is utilized to form a bipolar transistor having self-aligned emitter and base regions. A substrate of semiconductor material of a first conductivity type is provided and a first layer of semiconductor material ... | 10/22/1991 |
| 5024956 | Method of manufacturing a semiconductor device including mesa bipolar transistor with edge contacts A method of manufacturing a semiconductor device having a monocrystalline silicon region (3) comprising a first zone (9) and an adjacent second zone (10) and laterally enclosed by a sunken oxide layer (4) and by an overlying highly doped polycrystalline s... | 06/18/1991 |
| 5011788 | Process of manufacturing semiconductor integrated circuit device and product formed thereby A bipolar type of semiconductor integrated circuit device is provided with U-shaped grooves which are formed by cutting a main surface of a semiconductor body to form isolation regions between bipolar transistors. A silicon oxide film can be formed in the... | 04/30/1991 |
| 5001533 | Bipolar transistor with side wall base contacts A bipolar-type semiconductor device includes a semiconductor substrate on which a collector layer of a first conductivity type, a multilayered structure having a first insulating layer, a first semiconductor layer for connecting a base region, containing ... | 03/19/1991 |
| 4992843 | Collector contact of an integrated bipolar transistor A collector contact (6) is fabricated which is attached on the side to the collector zone (1), and around which a moat (3) is produced which laterally restricts the collector zone (1). The depth of the moat (3) is so dimensioned to be at least equal to th... | 02/12/1991 |
| 4984048 | Semiconductor device with buried side contact Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead... | 01/08/1991 |
| 4979010 | VLSI self-aligned bipolar transistor A self-aligned bipolar transistor in which an emitter polysilicon layer is used to align both an extrinsic base region and a deep collector contact. The diffused extrinsic base is separated from the diffused emitter region by an oxide sidewall segment. Do... | 12/18/1990 |
| 4968635 | Method of forming emitter of a bipolar transistor in monocrystallized film An emitter of a bipolar transistor is formed by depositing a polycrystalline or amorphous film on a substrate and monocrystallizing the deposited film. Further, the base region of the bipolar transistor is formed by ion implantation through the emitter re... | 11/06/1990 |
| 4969026 | Mesa bipolar transistor with edge contacts A semiconductor device having a monocrystalline silicon region (3) comprising a first zone (9) and an adjacent second zone (10) and laterally enclosed by a sunken oxide layer (4) and by an overlying highly doped polycrystalline silicon layer (5). The sili... | 11/06/1990 |
| 4935375 | Method of making a semiconductor device A structured semiconductor body based on a Si substrate and having monocrystalline semiconductor regions and barrier regions which contain polycrystalline silicon which have preferably been produced in an Si-MBE process. The barrier regions are provided t... | 06/19/1990 |
| 4933733 | Slot collector transistor An improved semiconductor device is presented, the improvement comprising a slot collector contact region (38). The slot collector contact region (38) is formed in a semiconductor substrate (39) adjacent to base and emitter regions (40,44) of the bipolar ... | 06/12/1990 |
