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| Number | Title | Issue Date |
| 7332738 | Quantum phase-charge coupled device A method for reading out the state of a mesoscopic phase device. In the method the mesoscopic phase device is coherently coupled to a mesoscopic charge device using a phase shift device and the quantum state of the mesoscopic charge device is measured. A method for ... | 02/19/2008 |
| 7173272 | Quantum optical CNOT gate A nondeterministic quantum CNOT gate (10) for photon qubits, with success probability 1/9, uses beamsplitters (B1–B5) with selected reflectivities to mix control and target input modes. It may be combined with an atomic quantum memory to const... | 02/06/2007 |
| 7160822 | Method of forming quantum dots for extended wavelength operation A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots c... | 01/09/2007 |
| 7119356 | Forming closely spaced electrodes The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surf... | 10/10/2006 |
| 6930318 | Device for reinitializing a quantum bit device having two energy states The device for reinitializing to a state |0> a quantum bit device, or Qubit as it is otherwise known, having two states |0> and |1> associated with respective energy levels E0 and E1 where E0 | 08/16/2005 |
| 6512242 | Resonant-tunneling electronic transportors An electronic transportor that allows for the resonant tunneling of electrons between guided states, such as those found in a quantum wire or a line defect in a solid, and localized states, such as those found in a quantum dot or a point defect in a solid... | 01/28/2003 |
| 6479842 | Field effect transistor with a quantum-wave interference layer A field effect transistor having a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W, and the quantum-wave interference layer is formed in a ... | 11/12/2002 |
| 6337508 | Transistor with a quantum-wave interference layer A transistor having an electron quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B in a p-layer of a pn junction structure. The second layer B has wider band gap than the first layer W. Each thicknesses o... | 01/08/2002 |
| 6331716 | Variable capacity device with quantum-wave interference layers A variable capacity device having an nin, pip, nn- p, np- p, or nip junction whose middle layer is constituted by a quantum-wave interference layer with plural periods of a first layer W and a second layer B as a unit. The second lay... | 12/18/2001 |
| 6188082 | Diodes with quantum-wave interference layers A diode is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B, having at least one quantum-wave interference layer in a p-layer or an n-layer. The second layer B has wider band gap than t... | 02/13/2001 |
| 6188083 | Diodes with quantum-wave interference layers A pin diode, having a p-layer, an n-layer, and an i-layer sandwiched by the p-layer and the n-layer, is constituted by a quantum-wave interference unit with a plurality of pairs of a first layer W and a second layer B. The second layer B has a wider band ... | 02/13/2001 |
| 6060724 | Quantum wire logic gate A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output... | 05/09/2000 |
| 5994714 | Quantum diffraction transistor The present invention discloses a technique for applying diffraction characteristic of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. A quantum diffraction transistor according to ... | 11/30/1999 |
| 5940696 | Method of manufacturing a quantum diffraction transistor The present invention discloses a technique for applying diffraction characteristics of electrons to a two-dimensional electronic device to manufacture multi-functional transistor having various ON/OFF states. Method of manufacturing a quantum diffraction... | 08/17/1999 |
| 5908306 | Method for making a semiconductor device exploiting a quantum interferences effect A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a channel region connected multiply with multiplicity of n (nࣙ3) and having (n-1)-fold rotational symmetry around an axis of the channel region; a gate e... | 06/01/1999 |
| 5903010 | Quantum wire switch and switching method A quantum wire switch and a switching method for switching charge carriers between a first output and a second output utilizing quantum interference of the charge carriers. A quantum switch includes a quantum wire extending from an input to a first output... | 05/11/1999 |
| 5892247 | Semiconductor device and a manufacturing method thereof The semiconductor device comprises a substrate, a first conductive layer formed on the substrate with a first insulating layer inserted therebetween, thereby to constitute a first gate electrode, a second conductive layer selectively formed on the first g... | 04/06/1999 |
| 5811831 | Semiconductor device exploiting a quantum interference effect A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a semiconductor body; n-1 (nࣙ3) rods of forbidden regions extending along one direction, the forbidden regions being rotationally asymmetric around the o... | 09/22/1998 |
| 5705824 | Field controlled current modulators based on tunable barrier strengths A carrier transport media is doped with impurities or includes barrier structures within or on the carrier transport media and a sinusoidally alternating external electric field(s) with frequencies equal to the Bloch frequency divided by an integer is app... | 01/06/1998 |
| 5640022 | Quantum effect device A quantum effect device which operates in a mesoscopic region and eliminates the need for making monochromatic electron waves for the operation and moreover can operate in a high temperature region. The quantum effect device comprises a first waveguide fo... | 06/17/1997 |
| 5557141 | Method of doping, semiconductor device, and method of fabricating semiconductor device A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in ... | 09/17/1996 |
| 5521735 | Electron wave combining/branching devices and quantum interference devices Novel electron wave combining and/or branching devices and Aharonov-Bohm type quantum interference devices are proposed, which have no curved electron waveguide structures to form an electron branching or decoupling part or ring geometry. But instead the ... | 05/28/1996 |
| 5519232 | Quantum interference device A quantum interference device comprises a semi-insulating GaAs substrate; GaAs and AlGaAs layers sequentially formed with high purity on the substrate; a two-dimensional electron gas layer formed in the GaAs layer and serving as a channel; source/drain re... | 05/21/1996 |
| 5497015 | Quantum interference transistor A semiconductor device using interference effects of electron waves passing through a multichannel, wherein the multichannel is formed by a Dirac-delta-doped layer. A method of manufacturing a semiconductor device comprising the steps of: selectively form... | 03/05/1996 |
| 5453627 | Quantum interference device and complementary logic circuit utilizing thereof A quantum interference device has semiconductor heterojunctions laminated on a semiconductor substrate for forming a two-dimensional electron gas channel. On the semiconductor heterojunctions are formed a first, a second and a third electrode which, upon ... | 09/26/1995 |
| 5412223 | Semiconductor device exploiting a quantum interference effect A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a rod-shaped semiconductor portion extending in one direction; a prism-shaped semiconductor portion covering side faces of the rod-shaped semiconductor por... | 05/02/1995 |
| 5406094 | Quantum interference effect semiconductor device and method of producing the same A quantum interference effect transistor comprising a semiconductor substrate, an n-type first semiconductor layer, a channel second semiconductor layer, an n-type third semiconductor layer, a gate electrode, a source electrode, a drain electrode, a sourc... | 04/11/1995 |
| 5371388 | Electron wave interference devices, methods for modulating an interference current and electron wave branching and/or combining devices and methods therefor An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating electrons from the source electrode to the drain electrode and a ... | 12/06/1994 |
| 5367274 | Quantum wave guiding electronic switch A quantum wave guiding electronic switch includes a substrate which carries electron waveguides disposed in a fork-like configuration. Each of these electron waveguides is connected to a respective electron reservoir. Electrons are driven through the wave... | 11/22/1994 |
| 5350709 | Method of doping a group III-V compound semiconductor A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semi... | 09/27/1994 |
| 5332952 | Quantum phase interference transistor Disclosed is hererin a quantum phase interference transistor comprising: an emitter for emitting electron waves into a vacuum; a gate electrode for controlling the phase difference between a plurality of electron waves; and a collector for collecting the ... | 07/26/1994 |
| 5311011 | Quantum interference devices and methods for processing interference current An electron wave is propagated through a plurality of quantum-structure paths of a quantum interference device and is branched into into plural electron waves that are confined in the quantum-structure paths. The electron waves from the quantum-structure ... | 05/10/1994 |
| 5270557 | Quantum interference semiconductor device having a quantum point contact and fabrication process thereof A quantum interference semiconductor device comprises a channel layer of a first semiconductor material, a carrier supplying layer of a second semiconductor material provided on the channel layer and whereby a two-dimensional carrier gas is formed in the ... | 12/14/1993 |
| 5233205 | Quantum wave circuit A novel concept and structure of a semiconductor circuit are disclosed which utilize the fact that the interaction between the carriers such as electrons and holes supplied in a meso-scopic region and the potential field formed in the meso-scopic region l... | 08/03/1993 |
| 5204588 | Quantum phase interference transistor Disclosed is hererin a quantum phase interference transistor comprising: an emitter for emitting electron waves into a vacuum; a gate electrode for controlling the phase difference between a plurality of electron waves; and a collector for collecting the ... | 04/20/1993 |
| 5191216 | Quantum mechanical semiconductor device with electron/hole diffractive grating A solid state, quantum mechanical electron/hole wave device in the form of a switch or multiplexor includes a layer of semiconductor material supporting substantially ballistic electron/hole transport and a periodic grating structure formed in the layer o... | 03/02/1993 |
| 5157467 | Quantum interference device and method for processing electron waves utilizing real space transfer A quantum interference device includes a source, a drain and waveguides with quantum structures between the source and the drain. An electron wave from the source that is confined in the waveguides is split into plural electron waves. The phase difference... | 10/20/1992 |
| 5153688 | Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied An electron wave interference device controlled by a light is disclosed. The electron wave interference device includes a first channel to propagate an electron wave, a second channel arranged with an interval from the first channel for propagating an ele... | 10/06/1992 |
| 5130766 | Quantum interference type semiconductor device A quantum interference type semiconductor device is composed of at least one bifurcated branch conductive channel with a heterojunction in a semiconductor with a band discontinuity that produced a potential well between two semiconductor regions into whic... | 07/14/1992 |
| 5105232 | Quantum field-effect directional coupler A quantum field-effect directional coupler is described comprised of two quantum waveguides closely spaced apart with an adjacent gate electrode over the space between waveguides. The coupling of electron probability density between waveguides is controll... | 04/14/1992 |
