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| Number | Title | Issue Date |
| 7361586 | Preamorphization to minimize void formation Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. According to one aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, f... | 04/22/2008 |
| 7126199 | Multilayer metal gate electrode A complementary metal oxide semiconductor integrated circuit may be formed with NMOS and PMOS transistors that have high dielectric constant gate dielectric material over a semiconductor substrate. A metal barrier layer may be formed over the gate dielectric. A work... | 10/24/2006 |
| 6579775 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electro... | 06/17/2003 |
| 6573149 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electro... | 06/03/2003 |
| 6537901 | Method of manufacturing a transistor in a semiconductor device There is disclosed a method of manufacturing a transistor in a semiconductor device. The present invention forms a Ta film or a TaNx film at a low temperature or forms a first TaNx film in which the composition(x) of nitrogen is 0.45~0.55, on a gate insul... | 03/25/2003 |
| 6383879 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electro... | 05/07/2002 |
| 6376349 | Process for forming a semiconductor device and a conductive structure Semiconductor devices and conductive structures can be formed having a metallic layer. In one embodiment, a semiconductor device includes an amorphous metallic layer (22) and a crystalline metallic layer (42). The amorphous metallic layer (22) helps to re... | 04/23/2002 |
| 6215149 | Trenched gate semiconductor device A semiconductor device having a trench type gate and a fabrication method therefor is provided. The semiconductor device includes a trench formed in a semiconductor substrate and a gate insulating layer formed on the inner walls of the trench. A gate fill... | 04/10/2001 |
| 6063692 | Oxidation barrier composed of a silicide alloy for a thin film and method of construction A method of fabricating an oxidation barrier for a thin film is provided. The method may include forming a thin film (10) outwardly from a semiconductor substrate (12) and separated from the semiconductor substrate (12) by a primary insulator layer (14). ... | 05/16/2000 |
| 5969386 | Aluminum gates including ion implanted composite layers An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen, carbon, oxygen and boron ions. A composite layer of alumin... | 10/19/1999 |
| 5796166 | Tasin oxygen diffusion barrier in multilayer structures A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon an... | 08/18/1998 |
| 5776823 | Tasin oxygen diffusion barrier in multilayer structures A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon an... | 07/07/1998 |
| 5576579 | Tasin oxygen diffusion barrier in multilayer structures A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon an... | 11/19/1996 |
| 4160261 | MIS Heterojunction structures In a metal-insulator-semiconductor (MIS) structure, the I-layer comprises a single-crystal, semi-insulating layer which forms a substantially lattice-matched heterojunction with the underlying S-layer. Illustratively, the structure, grown by MBE, includes... | 07/03/1979 |
| 4151537 | Gate electrode for MNOS semiconductor memory device Optimized switching and retention characteristics of an MNOS memory device are obtained by using as a gate electrode material either metals or semi-metals having a high work function, in conjunction with a gate dielectric layer having a low density of tra... | 04/24/1979 |
| 3999209 | Process for radiation hardening of MOS devices and device produced thereby An MOS device and a method for making such device where an insulating layer over the gate region is formed at critical temperatures results in hardening the device against high energy particle and electromagnetic radiation effects. A layer of chromium on ... | 12/21/1976 |
