Bizarre Patents
Hands free towel carrying system
A hands free towel carrying system for coupling a towel to a user to prevent loss, theft or contamination.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7420227 | Cu-metalized compound semiconductor device The present invention is a compound semiconductor device characterized in that it is Cu-metalized to improved the reliability of the device and to greatly reduce the cost of production. ... | 09/02/2008 |
| 7285857 | GaN-based III—V group compound semiconductor device and p-type electrode for the same Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a... | 10/23/2007 |
| 7190076 | Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN sub... | 03/13/2007 |
| 6977395 | Semiconductor device A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conducti... | 12/20/2005 |
| 6693352 | Contact structure for group III-V semiconductor devices and method of producing the same A contact structure for group III-V and group II-VI compound semiconductor devices, generally used as a light emitting diode (LED), a laser diode (LD), or a photodiode (PD), comprising p-type and/or n-type conduction is disclosed. The contact structure co... | 02/17/2004 |
| 6683332 | Heterojunction bipolar transistor and manufacturing method therefor including electrode alloyed reaction layers A Pt alloyed reaction layer is formed under a base ohmic electrode. This alloyed reaction layer extends through a base protective layer so as to reach a base layer. Besides, a Pt alloyed reaction layer is formed under an emitter ohmic electrode. This allo... | 01/27/2004 |
| 6661037 | Low emitter resistance contacts to GaAs high speed HBT A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipol... | 12/09/2003 |
| 6639316 | Electrode having substrate and surface electrode components for a semiconductor device An electrode for a semiconductor device superior in die-bonding and wire-bonding characteristics with a submount and its manufacturing method are provided. The electrode is formed by ohmic-contacting the surface of a semiconductor, which comprises a subst... | 10/28/2003 |
| 6629640 | Holographic laser scanning method and system employing visible scanning-zone indicators identifying a three-dimensional omni-directional laser scanning volume for package transport navigation A method of and system for automatically identifying packages during manual package sortation operations, wherein, a laser scanning system is supported above a workspace environment of 3-D spatial extent, which can be occupied by a human operator involved... | 10/07/2003 |
| 6610606 | Method for manufacturing nitride compound based semiconductor device using an RIE to clean a GaN-based layer A method for manufacturing a GaN-based semiconductor device in which an ohmic contact can be provided between the semiconductor layer and the electrode material. In a method for manufacturing wherein an n-GaN layer, an emissive layer, a p-GaN layer are fo... | 08/26/2003 |
| 6583454 | Nitride based transistors on semi-insulating silicon carbide substrates A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum ... | 06/24/2003 |
| 6583455 | Fabrication of low resistance, non-alloyed, OHMIC contacts to INP using non-stoichiometric INP layers A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor co... | 06/24/2003 |
| 6570194 | Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same The present invention provides a structure of a semiconductor device, the structure comprising: a compound semiconductor multi-layer structure having at least a channel region; and at least an ohmic contact layer provided adjacent to a first side face of ... | 05/27/2003 |
| 6555457 | Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer. During formation of the contact structure, this thin metal l... | 04/29/2003 |
| 6531715 | Multilayer contact electrode for compound semiconductors and production method thereof A multilayer contact electrode for connecting a bonding wire to a p-type surface of a III/V-compound semiconductor is formed by a first metallizing step followed by a tempering step. Then, a second metallized layer of the same metal as the first metal lay... | 03/11/2003 |
| 6521998 | Electrode structure for nitride III-V compound semiconductor devices In an electrode structure for a nitride III-V compound semiconductor device, a metallic nitride is used as an electrode material. A metallic material of the metallic nitride has a negative nitride formation free energy, and comprises at least one metal se... | 02/18/2003 |
| 6486502 | Nitride based transistors on semi-insulating silicon carbide substrates A high electron mobility transistor (HEMT) (10) is disclosed that includes a semi-insulating silicon carbide substrate (11), an aluminum nitride buffer layer (12) on the substrate, an insulating gallium nitride layer (13) on the buffer layer, an active st... | 11/26/2002 |
| 6452244 | Film-like composite structure and method of manufacture thereof On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor laye... | 09/17/2002 |
| 6429111 | Methods for fabricating an electrode structure The electrode structure of the invention includes a p-type Alx Gay In1-x-y N (0ࣘxࣘ1, 0ࣘyࣘ1, x+yࣘ1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the ele... | 08/06/2002 |
| 6423562 | Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same For forming a contact electrode to an n-type contact layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer... | 07/23/2002 |
| 6410946 | Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer In order to reduce a contact resistance of an electrode of a semiconductor device, a metal layer is directly formed on a source area and a drain area so as to form a source electrode and a drain electrode without providing a cap layer thereunder. Conseque... | 06/25/2002 |
| 6410944 | Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors Disclosed are an epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors and a method for growing such a structure. A very high density of p-type doped GaAs or p-type graded Alx Ga1-x As (0 | 06/25/2002 |
| 6392262 | Compound semiconductor device having low-resistive ohmic contact electrode and process for producing ohmic electrode An indium layer sandwiched between palladium layers are treated with heat so that the indium is diffused into a p-type gallium arsenide, and is alloyed with the palladium, whereby the p-type indium gallium arsenide layer decreases a Schottky barrier betwe... | 05/21/2002 |
| 6365969 | Ohmic electrode, method of manufacturing the same and semiconductor device An ohmic electrode consists of a plurality of metal layers stacked on a p-type group III-V semiconductor crystal base material, in which a layer consisting of a group VB metal is stacked as a first layer as viewed from the side of the base material and a ... | 04/02/2002 |
| 6329716 | Contact electrode for N-type gallium nitride-based compound semiconductor and method for forming the same For forming a contact electrode to an n-type contact layer of a gallium nitride-based compound semiconductor, the n-type contact layer of the gallium nitride-based compound semiconductor is exposed to an oxygen plasma to form an oxygen-doped surface layer... | 12/11/2001 |
| 6326294 | Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices A method of fabricating on ohmic metal electrode. The p-type ohmic metal electrode according to the present invention employs Ru and RuOx as the cover layer in lieu of conventional Au, in order to effectively prevent penetration by contaminants... | 12/04/2001 |
| 6316793 | Nitride based transistors on semi-insulating silicon carbide substrates A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum ... | 11/13/2001 |
| 6313534 | Ohmic electrode, method and multi-layered structure for making same To realize an ohmic electrode having practically satisfactory characteristics relative to GaAs semiconductors, first formed on an n+ -type GaAs substrate are a Ni thin film with a thickness between 8 nm and 30 nm, an In thin film with a thickne... | 11/06/2001 |
| 6287946 | Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor co... | 09/11/2001 |
| 6281528 | Ohmic contact improvement between layer of a semiconductor device An electrode having a good contact between a semiconductor substrate and an electrode film is formed in a semiconductor device, and a manufacturing method therefor. On first AlGaAs of a compound semiconductor substrate, a second semiconductor layer of sec... | 08/28/2001 |
| 6258616 | Method of making a semiconductor device having a non-alloyed ohmic contact to a buried doped layer A semiconductor device having a buried doped layer of semiconductor material and a non-alloyed contact to the buried doped layer. The non-alloyed contact is made ohmic by the presence of an underlying delta-doped monolayer. The semiconductor device is mad... | 07/10/2001 |
| 6239490 | P-contact for a Group III-nitride semiconductor device and method of making same A p-contact that comprises a contact layer of a p-type Group III-nitride semiconductor having an exposed surface and an electrode layer of palladium (Pd) located on the exposed surface of the contact layer. The p-contact is made by providing a p-type Grou... | 05/29/2001 |
| 6228673 | Method of fabricating a surface coupled InGaAs photodetector A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate, an n+ InP contact layer overlying the InP substrate, an undoped InGaAs absorbing layer overlying the n+ InP contact layer, and a p+ doped InGaAs layer overlyin... | 05/08/2001 |
| 6222204 | Electrode structure and method for fabricating the same The electrode structure of the invention includes a p-type Alx Gay In1-x-y N (0ࣘxࣘ1, 0ࣘyࣘ1, x+yࣘ1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the ele... | 04/24/2001 |
| 6207976 | Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof A first surface layer made of compound semiconductor material is defined in a surface area of a substrate. A first intermediate layer is formed on the surface layer, the first intermediate layer being made of compound material having Ga as a III group ele... | 03/27/2001 |
| 6201291 | Semiconductor device and method of manufacturing such a device A semiconductor device, for example an IC, having conductor tracks (3) of a metal (3) exhibiting a better conductance than aluminium, such as copper, silver, gold or an alloy thereof. The tracks are situated on an insulating layer (2) and are connected to... | 03/13/2001 |
| 6191021 | Method of forming a low-resistance contact on compound semiconductor Generally, and in one form of the invention, a method is disclosed for forming an ohmic contact on a GaAs surface 20 comprising the steps of depositing a layer of InGaAs 22 over the GaAs surface 20, and depositing a layer of TiW 24 on the layer of InGaAs ... | 02/20/2001 |
| 6188137 | Ohmic electrode structure, semiconductor device including such ohmic electrode structure, and method for producing such semiconductor device An ohmic electrode structure includes an n-Inx Ga1-x As layer where 0 | 02/13/2001 |
| 6165859 | Method for making InP heterostructure devices The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd--Pt--Au which gives the required critical diffusion proper... | 12/26/2000 |
| 6146931 | Method of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contact A semiconductor device includes an ohmic electrode and a Schottky electrode respectively carrying interconnection patterns with intervening adhesion layer and a diffusion barrier layer, wherein the Schottky electrode further includes a metal layer that pr... | 11/14/2000 |
