Class 257/E29.141 - Resistive materials for field-effect devices (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.139. This
No. of patents: 54
Last issue date: 10/28/2008

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Number	Title	Issue Date
7442571	Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped...	10/28/2008
7425753	Semiconductor device A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object is disclosed. The semiconductor device includes a lower layer side insulator film formed on a semiconductor substrate, a metal wiring pattern formed on the lower l...	09/16/2008
7332401	Method of fabricating an electrode structure for use in an integrated circuit An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the d...	02/19/2008
6566185	Method of manufacturing a plural unit high frequency transistor A semiconductor device has a plurality of transistor units each of which is constituted by a unit prepared by arranging a plurality of unit cells each made up of a drain, gate, and source adjacent to each other on the major surface of a semiconductor subs...	05/20/2003
6486511	Solid state RF switch with high cutoff frequency A solid state microwave switch having a plurality of adjacent parallel fingers covered with an oxide layer. One end of a finger is an N+ source region while the other end is an N+ drain region, with a current conducting N region between them. The oxide la...	11/26/2002
6441410	MOSFET with lateral resistor ballasting The current density profile in the conduction channel of a field effect transistor is controlled and thermal gradients are limited under extreme operating conditions by providing lateral resistive ballasting at the source/drain regions adjacent the conduc...	08/27/2002
6351015	Transistor device of MOS structure in which variation of output impedance resulting from manufacturing error is reduced A MOS (Metal Oxide Semiconductor) transistor includes a gate electrode, a drain electrode, and a source electrode. The MOS transistor has an on-state resistance when the MOS transistor is in an ON state. The MOS transistor further includes a specific elec...	02/26/2002
6346728	Plural transistor device with multi-finger structure A semiconductor device has a plurality of transistor units each of which is constituted by a unit prepared by arranging a plurality of unit cells each made up of a drain, gate, and source adjacent to each other on the major surface of a semiconductor subs...	02/12/2002
6268286	Method of fabricating MOSFET with lateral resistor with ballasting The current density profile in the conduction channel of a field effect transistor is controlled and thermal gradients are limited under extreme operating conditions by providing lateral resistive ballasting at the source/drain regions adjacent the conduc...	07/31/2001
6236088	Semiconductor device gate structure for thermal overload protection An arrangement for providing thermal overload protection for a gated electrode power semiconductor device comprises connecting the gate electrode of the device in a series circuit between the gate electrode terminal applying a bias voltage to the gate ele...	05/22/2001
6023086	Semiconductor transistor with stabilizing gate electrode A semiconductor device includes a transistor (30, 51) having a gate electrode (15, 52) wherein the gate electrode (15, 52) has a highly resistive portion (24, 25, 55). The highly resistive portion (24, 25, 55) is integrated into the gate electrode (15, 52...	02/08/2000
5831303	Field effect transistor utilizing the gate structure two-dimensionally The object of the invention is a field-effect transistor comprising a drain (D) and a source (S) and a gate (G) with a determined width (W) and length (L), equipped with means (G1-G2) for generating a voltage distribution on the gate in direction of its w...	11/03/1998
5828101	Three-terminal semiconductor device and related semiconductor devices A semiconductor device has trenches formed on the surface of a semiconductor. The device passes a main current through a channel formed between the trenches and controls the main current with the use of gate electrodes buried in the trenches. The main cur...	10/27/1998
5726474	Field effect controlled semiconductor component with integrated resistance therein A semiconductor body is covered by a polysilicon layer having a gate electrode and a contact surface for fastening a gate lead. An integrated ohmic resistor connects the gate electrode to the contact surface....	03/10/1998
5677555	Output driver transistor with multiple gate bodies Method and apparatus for controlling an output transistor in an output driver circuit. In one embodiment of the invention, an input signal is routed to a first gate body which is disposed over a first channel region in a substrate. The first gate body has...	10/14/1997
5663586	Fet device with double spacer An improved FET device in which the hot carrier immunity and current driving capability are improved, and the subthreshold leakage current is minimized. The device has a gate electrode with vertical sidewalls, and a thin layer of SiO2 over the ...	09/02/1997
5641698	Method of fabricating FET device with double spacer An improved FET device in which the hot carrier immunity and current driving capability are improved, and the subthreshold leakage current is minimized. The device has a gate electrode with vertical sidewalls, and a thin layer of SiO2 over the ...	06/24/1997
5592006	Gate resistor for IGBT A polysilicon gate resistor consists of a plurality of parallel polysilicon strips extending from gate finger to gate pad. Different numbers of parallel strips can be selected during manufacture by using different contact masks....	01/07/1997
5498555	Method of making LDD with polysilicon and dielectric spacers An improved FET device in which the hot carrier immunity and current driving capability are improved, and the subthreshold leakage current is minimized. The device has a gate electrode with vertical sidewalls, and a thin layer of SiO2 over the ...	03/12/1996
5449938	MOS-controlled power semiconductor component A power semiconductor component having integrated protection against electrostatic destruction is published. Such a semiconductor component (1) comprises a semiconductor substrate (10) having at least one MOS structure whose gate (7) is arranged insulated...	09/12/1995
5411906	Method of fabricating auxiliary gate lightly doped drain (AGLDD) structure with dielectric sidewalls In a method for producing an auxiliary gate lightly doped drain structure, a gate region is placed on a substrate between two source/drain regions. A first implant of atoms is made into the substrate on two sides of the gate region. Sidewalls are formed o...	05/02/1995
5338948	Charge-coupled device with open gate structure The light gathering capability or quantum efficiency of a charge-coupled device is improved by the configuration of the multi-phase gate structure to leave large surface areas of the semiconductor substrate uncovered. Each of the electrodes of the multi-p...	08/16/1994
5293058	Linear voltage-controlled resistance element The channel resistance of a MOSFET is made independent of VS -VD by maintaining the ends of the gate electrode adjacent the source and drain regions at an offset voltage with respect to the source and drain regions, respectively, and...	03/08/1994
5132758	Semiconductor device and manufacturing method thereof In a MOSFET of an LDD structure, a side wall is made conductive and connected to a gate through a resistance thereby to cause hot carriers taken into the side wall to be discharged to a gate through the resistance, whereby a channel resistance is prevente...	07/21/1992
5128567	Output circuit of semiconductor integrated circuit with reduced power source line noise An output circuit of a semiconductor integrated circuit includes a plurality of output transistors having different current driving abilities for a load, and a plurality of signal delay means for delaying signals for driving each of the output transistors...	07/07/1992
5091763	Self-aligned overlap MOSFET and method of fabrication A high speed submicron transistor which exhibits a high immunity to hot electron degradation and is viable for VLSI manufacturing. An inner gate member is formed on a p type substrate. A first source region and a first drain region are disposed in the p t...	02/25/1992
4977341	Integrated circuit to reduce switching noise A transistor (14) having a plurality of sub-transistors (26a-f) includes a voltage controlling device (45). The voltage controlling device induces a current through an elongated gate (24) producing a voltage drop across the elongated gate (24) by providin...	12/11/1990
4920388	Power transistor with integrated gate resistor A power MOS transistor includes a polycrystalline silicon layer which provides connection to act as a resistor between a first portion of gate metallization disposed above the gate of the device, and a second portion of gate metalization adjacent to the a...	04/24/1990
4783147	Active matrix display screen without spurious transistor An active matrix display screen which does not include a spurious transistor. The screen includes a matrix of pixels with addressing columns and rows. The addressing rows consist of a stack of semiconductive material, insulating material and conductive ma...	11/08/1988
4771195	Integrated circuit to reduce switching noise A transistor (14) having a plurality of sub-transistors (29a-f) includes a voltage controlling device (45). The voltage controlling device induces a current through an elongated gate (24) producing a voltage drop across the elongated gate (24) by providin...	09/13/1988
4738749	Process for producing an active matrix display screen with gate resistance Process for producing an active matrix display screen with gate resistance. A resistive layer, for example of aSi:n+ is inserted under the gate of the transistors. A short circuit in the insulating layer no longer risks short-circuiting a line and ...	04/19/1988
4649414	PNPN semiconductor switches In a planer type PNPN semiconductor switch having a MOS FET structure, a field plate electrode is embedded in an insulator covering a surface of a semiconductor substrate to overlie an interface between the semiconductor substrate and a P gate region for ...	03/10/1987
4602170	Resistive gate field effect transistor logic family A family of digital logic circuits constructed with resistive gate field effect transistors is provided. The logic circuits are comprised of AND and OR circuits, each implemented with resistive gate devices. In constructing the AND circuit, the resistive ...	07/22/1986
4590506	Charge-coupled buried-channel device with high-resistivity gate electrodes By the use of high-ohmic polycrystalline silicon (poly) in MIS elements, a depletion layer can be formed in the poly material which brings about an electric decoupling between the poly (gate) and the underlying semiconductor body. This effect can be utili...	05/20/1986
4590509	MIS high-voltage element with high-resistivity gate and field-plate By the use of high-ohmic polycrystalline silicon(poly) in MIS elements, a depletion layer can be formed in the poly material which brings about an electric decoupling between the poly (gate) and the underlying semiconductor body. This effect can be utiliz...	05/20/1986
4586064	DMOS with high-resistivity gate electrode By the use of high-resistivity polycrystalline silicon (poly) in MIS elements, a depletion layer can be formed in the poly material which brings about an electric decoupling between the poly (gate) and the underlying semiconductor body. This effect can be...	04/29/1986
4490734	Variable impedance circuit employing an RIS field effect transistor A variable impedance circuit employing an RIS field effect transistor which greatly reduces distortion at low and high frequencies is obtained by providing means for applying voltages to the RIS field effect transistor at values determined by the followin...	12/25/1984
4316140	Charge-flow transistors A charge-flow transistor having a source region and a drain region in a semiconductor substrate, a gate insulator and a gapped gate electrode with a gap material having some electrical conductance disposed in the gap thereof....	02/16/1982
4288801	Monolithic HVMOSFET active switch array Integrated monolithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers that may be switched on and off. The HVMOSFET'S include D...	09/08/1981
4270137	Field-effect devices A field-effect device, e.g. an insulated-gate field-effect transistor has field-relief means in the form of a polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the for...	05/26/1981

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Class 257/E29.141 - Resistive materials for field-effect devices (EPO)