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| Number | Title | Issue Date |
| 6558985 | Charge coupled device and method of fabricating the same A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first trans... | 05/06/2003 |
| 6448592 | Charge coupled device, and method of manufacturing such a device It is known in charge coupled devices to use a dual layer of silicon oxide and silicon nitride as the gate dielectric. Since silicon nitride is practically impermeable to hydrogen, the nitride layer is usually provided with openings through which hydrogen... | 09/10/2002 |
| 6383834 | Charge coupled device The charge coupled device (CCD) formed according the method of the present invention includes a substrate, at least two photodiodes formed in the substrate and a first insulating layer formed on the substrate. A first transfer gate is formed on a portion ... | 05/07/2002 |
| 6312970 | Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs... | 11/06/2001 |
| 6242768 | Charge coupled device and a driving method thereof The present invention relates to a charge coupled device (CCD) and a driving method, and the driving method of the CCD includes the steps of: providing a CCD including a semiconductor substrate, a photodiode in the semiconductor substrate, a charge transf... | 06/05/2001 |
| 6218686 | Charge coupled devices A charge coupled device has a transfer electrode portion having a first gate electrode, a second gate electrode having an end portion partially overlapping an end portion of the first gate electrode, and a third gate electrode having one end portion parti... | 04/17/2001 |
| 6194749 | CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs... | 02/27/2001 |
| 6191440 | Charge transfer device with improved charge detection sensitivity In a charge transfer device, a floating gate is provided in an insulating film which is provided on a charge transfer channel layer. A buffer amplifier is connected with the floating gate, and detects signal charges in the charge transfer channel layer to... | 02/20/2001 |
| 6136629 | Methods for forming a charge coupled devices including buried transmission gates A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a char... | 10/24/2000 |
| 6087685 | Solid-state imaging device A solid-state imaging device includes a plurality of sensor portions, and a vertical shift register corresponding to each of a series of sensor portions. A transfer electrode of the vertical shift register is formed of a first electrode and a second elect... | 07/11/2000 |
| 5986295 | Charge coupled device A charge coupled device and a manufacturing method therefor are provided. The charge coupled device has a transfer electrode portion having a first gate electrode, a second gate electrode having an end portion partially overlapping an end portion of the f... | 11/16/1999 |
| 5914506 | Charge coupled device having two-layer electrodes and method of manufacturing the same A charge coupled device has a plurality of N-diffused regions and a plurality of N- diffused regions arranged alternately along a charge transfer channel. A first electrode and second electrode overlying each N-diffused region and N-... | 06/22/1999 |
| 5904494 | Fabrication process for solid-state image pick-up device with CCD register At first, first transfer electrodes are formed selectively on a semiconductor substrate. Then, the surface of the first transfer electrodes are thermally oxidized at a temperature of 850° to 950° C. to form thermal oxide layers. After depositing a ... | 05/18/1999 |
| 5818075 | Charge transfer device A charge transfer device comprising charge transfer means for transferring charges, a floating diffusion layer for accumulating the charges transferred from said charge transfer means, a floating gate electrode formed on said floating diffusion layer via ... | 10/06/1998 |
| 5793070 | Reduction of trapping effects in charge transfer devices A charge transfer device including a semiconductor substrate, a gate electrode provided in association with the substrate, the gate electrode having a corresponding channel region through which charge is propagated, the channel region having a predetermin... | 08/11/1998 |
| 5731601 | Four-phase driving CCD solid-state imaging device with a two-layer transfer gate electrode According to the present invention, there is provided a solid-state imaging device that has a two-layer transfer electrode structure and is based on a four-phase driving all-pixel reading scheme. The transfer gate electrodes for taking the signal charges ... | 03/24/1998 |
| 5652442 | Charge coupled device and imaging device having a charge coupled device The invention relates to a charge coupled device with a buried channel in which charge is detected by a MOST (MOS transistor) incorporated in the channel and having a surface channel of the conductivity type opposed to that of the charge coupled device. T... | 07/29/1997 |
| 5641700 | Charge coupled device with edge aligned implants and electrodes A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment... | 06/24/1997 |
| 5637891 | Charge coupled device having different insulators A charged coupled device structure (CCD) and a method for fabricating the CCD structure, which induces a maximum potential distribution difference by utilizing gate insulation films having different physical properties. The charged coupled device includes... | 06/10/1997 |
| 5612555 | Full frame solid-state image sensor with altered accumulation potential and method for forming same In accordance with the invention, a full frame solid-state image sensor of altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a surface at which is situated a photodetector that comprises a ... | 03/18/1997 |
| 5612554 | Charge detection device and driver thereof In a charge detection device of a charge coupled device, an unnecessary overlap between a floating gate and other gates are reduced. A gate of a source follower amplifier is also formed in an active region. Further, the floating gate is connected to a gat... | 03/18/1997 |
| 5607872 | Method of fabricating charge coupled device Charge couples devices and methods for the fabrication of the same are disclosed. The charge coupled device is structured to comprise: a first electrode consisting of a first region and second region having lower resistance than the first region; and a se... | 03/04/1997 |
| 5556803 | Method for fabricating a charge coupled device A charged coupled device structure (CCD) and a method for fabricating the CCD structure, which induces a maximum potential distribution difference by utilizing gate insulation films having different physical properties. The charged coupled device includes... | 09/17/1996 |
| 5541133 | Method of manufacturing insulated electrodes in a semiconductor device and semiconductor device manufactured by such a method Method of manufacturing a semiconductor device and semiconductor device manufactured by such a method. A method of manufacturing a semiconductor device whereby a surface of a semiconductor body 1 is covered with an electrically insulating layer 8 and at l... | 07/30/1996 |
| 5539226 | Charge transfer device having an output gate electrode extending over a floating diffusion layer A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate... | 07/23/1996 |
| 5536956 | Charge transfer device with reduced parasitic capacitances for improved charge transferring A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate... | 07/16/1996 |
| 5519749 | Horizontal charge coupled device having a multiple reset gate A horizontal charge coupled device (HCCD) is provided with a multiple reset gate in order to establish a more stable, less noisy voltage in an output node floating diffusion. Charges are transferred from an input of the HCCD to the floating diffusion by m... | 05/21/1996 |
| 5516716 | Method of making a charge coupled device with edge aligned implants and electrodes A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment... | 05/14/1996 |
| 5497020 | Charge drain for a MIS device A semiconductor device which has a diffusion layer region in a semiconductor body, and a MIS transistor with a gate electrode formed on the semiconductor body that is connected to the diffusion layer region. The semiconductor device is made by the steps o... | 03/05/1996 |
| 5483090 | Solid-state image pickup device and method for manufacturing such device A plurality of channel separting regions are formed on a substrate with a space therebetween to segment an channel region. A first insulating layer is formed on the substrate, and a polycrystalline silicon layer is formed thereon and is then subject to pa... | 01/09/1996 |
| 5457332 | Process for manufacturing integrated circuits with juxtaposed electrodes and corresponding integrated circuit The invention relates to integrated circuits and their manufacture. A process is described for producing electrodes juxtaposed very close together, such as those encountered in charge-coupled shift registers. According to the invention, a first polycrystalline... | 10/10/1995 |
| 5451802 | Charge transfer device having a high-resistance electrode and a low-resistance electrode A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with t... | 09/19/1995 |
| 5442207 | Charge coupled device A charge coupled device including a first electrode consisting of a first region and a second region having lower resistance than the first region, and a second electrode consisting of a first region and a second region having lower resistance than this f... | 08/15/1995 |
| 5428231 | Solid-state image device including charge-coupled devices having improved electrode structure A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoel... | 06/27/1995 |
| 5426318 | Horizontal charge coupled device having a multiple reset gate A horizontal charge coupled device (HCCD) is provided with a multiple reset gate in order to establish a more stable, less noisy voltage in an output node floating diffusion. Charges are transferred from an input of the HCCD to the floating diffusion by m... | 06/20/1995 |
| 5393997 | CCD having transfer electrodes of 3 layers A solid state imager device comprises a plurality of pixels arranged in rows and columns, each of the pixels consisting of a light sensing element and a vertical transfer portion adjacent to the light sensing element, the vertical transfer portion having ... | 02/28/1995 |
| 5369293 | Charge-coupled device having reduced cross-talk A charge-coupled device has a series register (A) having charge storage electrodes (3a) for defining charge storage wells and charge transfer electrodes (3b) for transporting charge between the charge storage wells and a parallel section (C) having channe... | 11/29/1994 |
| 5338946 | Solid state image sensor with fast reset A solid-state image sensor has a body of a semiconductor material of one conductivity type having a surface. A plurality of photodetectors are in the body at the surface and are arranged in at least one line. The photodetectors are adapted to photogenerat... | 08/16/1994 |
| 5315137 | Charge transfer device, process for its manufacture, and method of driving the device The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufac... | 05/24/1994 |
| 5314836 | Method of making a single electrode level CCD The disclosure is directed to a method of forming a CCD with two sets of gate electrodes in a single layer of a conductive material. The method comprises forming a channel region in a body of a semiconductor material along a surface thereof and forming a ... | 05/24/1994 |
