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| Number | Title | Issue Date |
| 7439107 | Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the attenuator. As a result, the attenuation ratio of the attenuator fluc... | 10/21/2008 |
| 7416925 | Doped structure for finfet devices A semiconductor device includes a substrate and an insulating layer on the substrate. The semiconductor device also includes a fin structure formed on the insulating layer, where the fin structure includes first and second side surfaces, a dielectric layer formed on... | 08/26/2008 |
| 7417252 | Flat panel display The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, ... | 08/26/2008 |
| 7396765 | Method of fabricating a liquid crystal display device A method of fabricating a liquid crystal display device according to an embodiment of the present invention includes forming first and second conductive layers on a substrate, wherein the first layer is transparent; patterning the second conductive layer and the fir... | 07/08/2008 |
| 7388265 | Thin film transistor and fabrication method thereof A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and t... | 06/17/2008 |
| 7352002 | Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy b... | 04/01/2008 |
| 7352037 | Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions A semiconductor device may include at least one pair of fins on a semiconductor substrate. A channel region may be formed in each fin. The semiconductor device may further include a gate electrode corresponding to each pair of channel regions, a source contact plug ... | 04/01/2008 |
| 7307282 | Thin film transistors and semiconductor device The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not lar... | 12/11/2007 |
| 7256457 | Thin-film transistor device, utilizing different types of thin film transistors A TFT device, a method of manufacturing the same, a TFT substrate and a display device, making it possible to decrease the photolithography steps, to improve the productivity and to decrease the cost of production. There are formed on the same substrate a first n-ch... | 08/14/2007 |
| 7247882 | Display device There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second g... | 07/24/2007 |
| 7235813 | Thin film transistor and pixel structure thereof A thin film transistor and a pixel structure with the same are disclosed. The thin film transistor includes a gate electrode with at least one notch, a gate dielectric layer, a source region, a drain region, and a channel layer. The gate electrode is on a substrate.... | 06/26/2007 |
| 7224008 | Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell The invention relates to a manufacturing method for an insulated gate semiconductor device cell, comprising the steps of forming a cell window (3) in a layered structure that is located on top of a semiconductor substrate (1), forming at least one proc... | 05/29/2007 |
| 7202501 | Thin film transistor and method for fabricating the same A thin film transistor formed by using a Metal Induced Lateral Crystallization process and method for fabricating the same. The thin film transistor comprises an active layer having source/drain regions and a channel region, a gate electrode, an insulating layer hav... | 04/10/2007 |
| 7180156 | Thin-film devices and method for fabricating the same on same substrate To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of t... | 02/20/2007 |
| 7173280 | Electro-optical device and manufacturing method thereof A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap th... | 02/06/2007 |
| 7132322 | Method for forming a SiGe or SiGeC gate selectively in a complementary MIS/MOS FET device Form a dielectric layer on a semiconductor substrate. Deposit an amorphous Si film or a poly-Si film on the dielectric layer. Then deposit a SiGe amorphous-Ge or polysilicon-Ge thin film theteover. Pattern and etch the SiGe film using a selective etch leaving the Si... | 11/07/2006 |
| 7087505 | Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy b... | 08/08/2006 |
| 6693294 | Schottky barrier tunnel transistor using thin silicon layer on insulator and method for fabricating the same Provided are a Schottky barrier tunnel transistor (SBTT) and a method of fabricating the same. The SBTT includes a buried oxide layer formed on a base substrate layer and having a groove at its upper surface; an ultra-thin silicon-on-insulator (SOI) layer... | 02/17/2004 |
| 6693328 | Semiconductor device formed in a semiconductor layer provided on an insulating film A semiconductor device includes an insulating film provided on a semiconductor substrate and a semiconductor layer provided on the insulating film. An element separating insulating film separates element area. A first gate insulating film is provided on t... | 02/17/2004 |
| 6689650 | Fin field effect transistor with self-aligned gate The present invention provides a process for fabricating a metal oxide semiconductor field effect transistor (MOSFET) having a double-gate and a double-channel wherein the gate region is self-aligned to the channel regions and the source/drain diffusion j... | 02/10/2004 |
| 6686606 | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along w... | 02/03/2004 |
| 6674130 | High performance PD SOI tunneling-biased MOSFET A new type of partially-depleted SOI MOSFET is described in which a tunneling connection between the gate and the base is introduced. This is achieved by using a gate dielectric whose thickness is below its tunneling threshold. The gate pedestal is made s... | 01/06/2004 |
| 6664165 | Semiconductor device and fabrication method therefor There is provided a semiconductor apparatus, and a fabrication method thereof, which are improved such that a reduction in concentration at the SOI active layer is prevented, and a parasitic MOSFET is not formed even in cases where Mesa-type isolation tec... | 12/16/2003 |
| 6664569 | Liquid crystal display device array substrate and method of manufacturing the same An array substrate for use in a liquid crystal display device includes a thin film transistor as a switching element, having a gate electrode, a source electrode and a drain electrode, wherein the gate electrode is a portion of a gate line near the crossi... | 12/16/2003 |
| 6661096 | Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature at 300° C. or less, setting the sputtering power from 1 kW to 9 kW, and setting the sputtering gas pressure from 1.0 Pa to 3... | 12/09/2003 |
| 6661026 | Thin film transistor substrate A TFT substrate includes a gate electrode and gate pad on a transparent substrate, an insulating layer on the gate electrode and exposing a portion of the gate pad, a semiconductor film on the insulating layer and the gate electrode, an impurity doped sem... | 12/09/2003 |
| 6657228 | Semiconductor integrated circuit and fabrication method thereof A semiconductor integared circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabriacting such circuits will be provided. A gate insulating film of t... | 12/02/2003 |
| 6649934 | Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same A gate wire is formed on an insulating substrate by a photolithography process using the first mask, and a gate insulating layer and a semiconductor layer are sequentially deposited. Then, an ohmic contact layer made of silicide or microcrystallized and d... | 11/18/2003 |
| 6649460 | Fabricating a substantially self-aligned MOSFET The present invention includes methods and structures for forming at least a substantially self-aligned MOSFET. According to the present invention, a method of fabricating a semiconductor device includes providing a substrate; providing first materials (s... | 11/18/2003 |
| 6649935 | Self-aligned, planarized thin-film transistors, devices employing the same A semiconductor device is presented which includes a self-aligned, planarized thin-film transistor which can be used in various integrated circuit devices, such as static random access memory (SRAM) cells. The semiconductor device has a first field-effect... | 11/18/2003 |
| 6646287 | Semiconductor device with tapered gate and insulating film In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and th... | 11/11/2003 |
| 6630388 | Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insu... | 10/07/2003 |
| 6624473 | Thin-film transistor, panel, and methods for producing them The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or pla... | 09/23/2003 |
| 6624446 | Thin film transistor for liquid crystal display and method of manufacturing the same Disclosed is a thin film transistor (TFT) for a liquid crystal display (LCD) and a method for manufacturing the same that allows the number of photomasks used in a photolithography process to be decreased as compared to conventional methods. A passivation... | 09/23/2003 |
| 6620656 | Method of forming body-tied silicon on insulator semiconductor device An integrated circuit using silicon-on-insulator (SOI) has most of its transistors with their channels (bodies) floating. Some of the transistors, however, must have their channels coupled to a predetermined bias in order to achieve desired operating char... | 09/16/2003 |
| 6617644 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second... | 09/09/2003 |
| 6611029 | Double gate semiconductor device having separate gates A semiconductor device may include a substrate and an insulating layer formed on the subtrate. A fin may be formed on the insulating layer and may include a number of side surfaces and a top surface. A first gate may be formed on the insulating layer prox... | 08/26/2003 |
| 6611023 | Field effect transistor with self alligned double gate and method of forming same A fully depleted silicon on insulator (SOI) field effect transistor (FET) includes a gate positioned above a channel region and an aligned back gate positioned below the channel region and the buried oxide later. Alignment of the back gate with the gate i... | 08/26/2003 |
| 6597015 | Method of fabricating thin-film transistor A method of fabricating a thin-film transistor on an insulation substrate. A first conductive layer, a gate dielectric layer, a silicon layer and a doped silicon layer are formed on the insulation substrate. These four layers are patterned to form a gate ... | 07/22/2003 |
| 6593235 | Semiconductor device with a tapered hole formed using multiple layers with different etching rates A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The depos... | 07/15/2003 |
