Class 257/E29.131 - Having drain and source regions at different vertical level having channel composed only of vertical sidewall connecting drain and source layers (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.13. This
No. of patents: 145
Last issue date: 10/14/2008

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Number	Title	Issue Date
7435628	Method of forming a vertical MOS transistor A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. Th...	10/14/2008
7423317	Split electrode gate trench power device A power semiconductor device which includes gate liners extending along gate insulation liners and an insulation block spacing the two gate liners. ...	09/09/2008
7397081	Sidewall semiconductor transistors A novel transistor structure and method for fabricating the same. The transistor structure comprises (a) a substrate and (b) a semiconductor region, a gate dielectric region, and a gate region on the substrate, wherein the gate dielectric region is sandwiched betwee...	07/08/2008
7388245	Semiconductor device, method for manufacturing the semiconductor device and portable electronic device provided with the semiconductor device A semiconductor device, which is characterized by that two or more island-shaped semiconductor layers including first and second island-shaped semiconductor layers are formed on the same substrate, at least the first island-shaped semiconductor layer has steps in it...	06/17/2008
7388289	Local multilayered metallization An interconnect comprises a trench and a number of metal layers above the trench. The trench has a depth and a width. The depth is greater than a critical depth, and the number of metal layers is a function of the width. In an alternate embodiment, a metallization s...	06/17/2008
7358141	Semiconductor device and method for fabricating the same Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of ...	04/15/2008
7288815	Semiconductor device and manufacturing method thereof A semiconductor device (20, 21, 22), including: a channel region (4) of a first conductivity type formed at a surface layer portion of a semiconductor substrate (1); a source region (25) of a second conductivity type which is different fr...	10/30/2007
7276754	Annular gate and technique for fabricating an annular gate A memory structure having a vertically oriented access transistor with an annular gate region and a method for fabricating the structure. More specifically, a transistor is fabricated such that the channel of the transistor extends outward with respect to the surfac...	10/02/2007
7256454	Electronic device including discontinuous storage elements and a process for forming the same An electronic device can include discontinuous storage elements that lie within a trench. In one embodiment, the electronic device can include a substrate that includes a trench extending into a semiconductor material. The trench can include a ledge and a bottom, wh...	08/14/2007
7217974	Output prediction logic circuits with ultra-thin vertical transistors and methods of formation Very fast integrated OPL circuits, such as pseudo-NMOS OPL and dynamic OPL, comprising CMOS gate arrays having ultra-thin vertical NMOS transistors are disclosed. The ultra-thin vertical NMOS transistors of the CMOS gate arrays are formed with relaxed silicon german...	05/15/2007
7173307	Semiconductor device and manufacturing method thereof An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed he...	02/06/2007
7166891	Semiconductor device with etch resistant electrical insulation layer between gate electrode and source electrode A trench-structure semiconductor device is highly reliable and has an increased resistance to hydrofluoric acid cleaning or other cleaning of an insulation film between a gate electrode, which is embedded in a trench, and source electrode. In a trench-structure semi...	01/23/2007
7115945	Strained silicon fin structure Disclosing is a strained silicon finFET device having a strained silicon fin channel in a double gate finFET structure. The disclosed finFET device is a double gate MOSFET consisting of a silicon fin channel controlled by a self-aligned double gate for suppressing s...	10/03/2006
7112832	Transistor having multiple channels A transistor (10) overlies a substrate (12) and has a plurality of overlying channels (72, 74, 76) that are formed in a stacked arrangement. A continuous gate (60) material surrounds each of the channels. Each of the channels is coupled t...	09/26/2006
7034358	Vertical transistor, and a method for producing a vertical transistor The present invention relates to a method for producing a vertical transistor, and to a vertical transistor. A sacrificial gate oxide and a sacrificial gate electrode are used during the production of the vertical transistor to makes it possible to considerably redu...	04/25/2006
6700158	Trench corner protection for trench MOSFET A method of making a trench MOSFET structure having upper trench corner protection, the method not requiring trench corner rounding or sacrificial oxide/strip steps. The trench MOSFET structure fabricated according to the method of the present invention e...	03/02/2004
6700175	Vertical semiconductor device having alternating conductivity semiconductor regions There is provided a method of manufacturing a vertical semiconductor device including a structural section in which an n- -type semiconductor region and a p- -type semiconductor region are arranged alternately without filling trenche...	03/02/2004
6700156	Insulated gate semiconductor device An insulated gate semiconductor device includes a first semiconductor layer of a first conductivity type. A plurality of second semiconductor layers of a second conductivity type selectively formed in a surface area of the first semiconductor layer. At le...	03/02/2004
6686626	Source-down power transistor The invention relates to a source-down power transistor, in which narrow trenches filled with insulated polysilicon are provided between a source pillar and a drain pillar. Inversion channels form on the side walls of the trenches when a positive drain vo...	02/03/2004
6677202	Power MOS device with increased channel width and process for forming same A power MOS device that has increased channel width comprises a semiconductor substrate and a doped upper layer of a first conduction type disposed on the substrate. The upper layer comprises a plurality of doped well regions of a second, opposite conduct...	01/13/2004
6673680	Field coupled power MOSFET bus architecture using trench technology A power metal oxide semiconductor-field-effect-transistor (MOSFET) device using trench technology to achieve a reduced-mask-production process. The power MOSFET device includes a gate signal bus having multiple gate trenches formed using fewer masks than ...	01/06/2004
6661054	Semiconductor device and method of fabricating the same A gate electrode is provided to fill up a trench while covering its opening. Assuming that WG represents the diameter (sectional width) of a head portion of the gate electrode located upward beyond a P-type base layer and an...	12/09/2003
6642600	Insulated gate semiconductor device having first trench and second trench connected to the same A second trench (105b) is formed inside a semiconductor layer (102), penetrating a base layer (103) and moreover extends along a second direction (D2) while being connected to one end portion of each first portion (P1) of a first trench (105a) extending a...	11/04/2003
6638850	Method of fabricating a semiconductor device having a trench-gate structure Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper ...	10/28/2003
6630389	Method for manufacturing semiconductor device In a trench-gate type power MOSFET in which a gate electrode is formed on a gate oxide layer formed on a surface of a wall defining a trench, the trench is annealed by heating, for example, at the temperature between 1050° C. and 1150° C. in a hydrogen ...	10/07/2003
6627951	High speed trench DMOS A method for making trench DMOS is provided that utilizes polycide and refractory techniques to make trench DMOS which exhibit low gate resistance, low gate capacitance, reduced distributed RC gate propagation delay, and improved switching speeds for high...	09/30/2003
6610574	Process for forming MOSgated device with trench structure and remote contact A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with a single common layer of conductive polysilicon which extends into each trench and overlies the silicon surface wh...	08/26/2003
6603173	Vertical type MOSFET A vertical power MOSFET, which can improve a surge withstand voltage and a surge withstand voltage against a surge voltage from an inductance load L. The vertical power MOSFET has a plurality of unit cells. The unit cell is formed from a MOSFET that uses ...	08/05/2003
6521538	Method of forming a trench with a rounded bottom in a semiconductor device In a method for manufacturing a semiconductor device, first, a trench is formed on a semiconductor substrate by anisotropic etching, and a reaction product is produced and deposited on the inner wall of the trench during the anisotropic etching. Then, iso...	02/18/2003
6512265	Method of fabricating semiconductor device In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconduct...	01/28/2003
6476443	MOSgated device with trench structure and remote contact and process for its manufacture A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with a single common layer of conductive polysilicon which extends into each trench and overlies the silicon surface wh...	11/05/2002
6452228	Silicon carbide semiconductor device A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×1015 cm-3. Accordingly, when a gate oxide film is formed on the surface...	09/17/2002
6448139	Manufacturing method of semiconductor device A semiconductor substrate has a trench for forming a gate insulation film and a gate electrode therein, or an insulated isolation isolating a semiconductor element like a transistor from other elements. The trench is formed by anisotropic dry etching. Aft...	09/10/2002
6410959	Method of fabricating semiconductor device In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconduct...	06/25/2002
6396102	Field coupled power MOSFET bus architecture using trench technology A power metal oxide semiconductor-field-effect-transistor (MOSFET) device using trench technology to achieve a reduced-mask-production process. The power MOSFET device includes a gate signal bus having multiple gate trenches formed using fewer masks than ...	05/28/2002
6351009	MOS-gated device having a buried gate and process for forming same An improved trench MOS-gated device comprises a monocrystalline semiconductor substrate on which is disposed a doped upper layer. The upper layer includes at an upper surface a plurality of heavily doped body regions having a first polarity and overlying ...	02/26/2002
6348388	Process for fabricating a uniform gate oxide of a vertical transistor A process for fabricating a gate oxide of a vertical transistor. In a first step, a trench is formed in a substrate, the trench extending from a top surface of the substrate and having a trench bottom and a trench side wall. The trench side wall comprises...	02/19/2002
6307231	Method of fabricating semiconductor device In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconduct...	10/23/2001
6303410	Methods of forming power semiconductor devices having T-shaped gate electrodes Power semiconductor devices having recessed gate electrodes are formed by methods which include the steps of forming a semiconductor substrate having a drift region of first conductivity type therein extending to a face thereof and forming a trench in the...	10/16/2001
6274431	Method for manufacturing an integrated circuit arrangement having at least one MOS transistor An integrated circuit arrangement contains an MOS transistor surrounded by an insulation structure, the source and drain thereof being arranged laterally and in different depths. A channel thereof proceeds essentially perpendicular to the surface of the c...	08/14/2001

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Class 257/E29.131 - Having drain and source regions at different vertical level having channel composed only of vertical sidewall connecting drain and source layers (EPO)