Class 257/E29.124 - Base electrodes for bipolar transistors (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.123. This
No. of patents: 127
Last issue date: 10/28/2008

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Number	Title	Issue Date
7442616	Method of manufacturing a bipolar transistor and bipolar transistor thereof A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154...	10/28/2008
7141865	Low noise semiconductor amplifier A Low Noise semiconductor amplifier structure formed from layers of differently doped semiconductor material. This structure when properly biased will amplify voltage signals applied to the input terminal (Base1 or signal-base), and provide the same signal, a...	11/28/2006
7091100	Polysilicon bipolar transistor and method of manufacturing it In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal layer is produced on the etch stop layer and an emitter window is etched ...	08/15/2006
6657242	Trench-isolated bipolar devices In order to produce an electrical connection to an inner layer such as a bottom diffusion (103), which has a good electrical conductivity and is located inside a bipolar semiconductor device isolated by trenches (119) and which for example forms a subcoll...	12/02/2003
6657280	Redundant interconnect high current bipolar device A bipolar transistor having a base contact surrounded by an emitter contact. A plurality of wires extending from the base contact and the emitter contact of the bipolar transistor, wherein the wires of the base contact are stacked higher than the wires of...	12/02/2003
6614073	SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are preferably formed at one or more lateral faces of the semiconduc...	09/02/2003
6611043	Bipolar transistor and semiconductor device having the same A bipolar transistor is provided with a collector layer of a first conductive type, a base layer of a second conductive type formed at a surface of the collector layer, and an emitter layer of the first conductive type formed at a surface of the base laye...	08/26/2003
6577200	High-frequency semiconductor device A high-frequency semiconductor amplifier circuit minimizing deterioration of high-frequency characteristics and attaining high thermal stability. A driver stage of a power amplifier has a multi-stage configuration with multi-finger HBTs connected in shunt...	06/10/2003
6495869	Method of manufacturing a double-heterojunction bipolar transistor on III-V material The invention relates to a method of manufacturing a double heterojunction bipolar transistor (1) comprising successively at least one sub-collector layer, a collector layer, a base layer and a metallic layer (10) deposited on the said base layer; the sai...	12/17/2002
6476452	Bipolar/BiCMOS semiconductor device An N type buried layer is buried in a P type silicon substrate. An N type epitaxial layer is formed on this buried layer. A P type intrinsic base region and an extrinsic base region are formed on the surface of the epitaxial layer. An N type emitter regio...	11/05/2002
6399999	Semiconductor device with extra control wiring for improving breakdown voltage In a lateral bipolar transistor, a control wiring layer is laid down under an emitter electrode wiring layer, and a voltage according to a reverse bias voltage applied to the collector diffusion layer is applied to the control wiring layer, thereby preven...	06/04/2002
6355972	Semiconductor device and method of manufacturing same The invention relates to a semiconductor device comprising a bipolar transistor having a collector (1), a base (2) and an emitter (3) at its active area (A). The semiconductor body (10) of the device is covered with an insulating layer (20). At least a pa...	03/12/2002
6297700	RF power transistor having cascaded cells with phase matching between cells The power delivered by an RF power transistor having cascaded cells or unit elements is improved by reducing the phase imbalance between elements and thereby reducing transverse effects between cells. Phase imbalance is reduced by varying the number of tr...	10/02/2001
6292390	Semiconductor device A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE	09/18/2001
6287930	Methods of forming bipolar junction transistors having trench-based base electrodes Bipolar junction transistors utilize trench-based base electrodes and lateral base electrode extensions to facilitate the use of preferred self-alignment processing techniques. A bipolar junction transistor is provided that includes an intrinsic collector...	09/11/2001
6255716	Bipolar junction transistors having base electrode extensions Methods of forming bipolar junction transistors having preferred base electrode extensions include the steps of forming a base electrode of second conductivity type (e.g., P-type) on a face of a substrate. A conductive base electrode extension layer is th...	07/03/2001
6255184	Fabrication process for a three dimensional trench emitter bipolar transistor A process for fabricating a bipolar junction transistor, featuring an N type, polysilicon emitter structure, located in an emitter trench, and featuring a narrow width. P type base region, located directly underlying an N type, emitter region, which is fo...	07/03/2001
6232822	Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE	05/15/2001
6121102	Method of electrical connection through an isolation trench to form trench-isolated bipolar devices In order to produce an electrical connection to an inner layer such as a bottom diffusion (103), which has a good electrical conductivity and is located inside a bipolar semiconductor device isolated by trenches (119) and which for example forms a subcoll...	09/19/2000
6114744	Semiconductor integration device and fabrication method of the same A lead electrode is formed to expose an active base region. A lead electrode for an emitter electrode is formed on the lead electrode in an emitter region, through an insulating film. The insulating film on the lead electrode is then etched to form a cont...	09/05/2000
6051872	Semiconductor integration device and fabrication method of the same A lead electrode (57) is formed to expose an active base region (61). On the lead electrode (57) is formed a lead electrode (64) for an emitter electrode via an insulation film (56). When a base contact hole (65') for exposing the lead electrode (57) and ...	04/18/2000
6048773	Methods of forming bipolar junction transistors having preferred base electrode extensions and transistors formed thereby Methods of forming bipolar junction transistors having preferred base electrode extensions include the steps of forming a base electrode of second conductivity type (e.g., P-type) on a face of a substrate. A conductive base electrode extension layer is th...	04/11/2000
6020250	Stacked devices Chips having subsurface structures within or adjacent a horizontal trench in bulk single crystal semiconductor are presented. Structures include three terminal devices, such as FETs and bipolar transistors, rectifying contacts, such as pn diodes and Schot...	02/01/2000
5986325	Microwave integrated circuit device The present invention provides a microwave integrated circuit device in which a sufficiently large gain can be obtained even in a high-frequency region by effectively reducing a ground inductance of a transistor. The device includes both a semiconductor s...	11/16/1999
5986323	High-frequency bipolar transistor structure A high-frequency bipolar transistor structure includes a base region of a first conductivity type formed in a silicon layer of a second conductivity type, the base region comprising an intrinsic base region surrounded by an extrinsic base region, an emitt...	11/16/1999
5962913	Bipolar transistor having a particular contact structure A base region and an emitter region are formed at a surface of an n-well region (collector region). A contact hole reaching a portion of the surface of the collector region is formed, a contact hole reaching a portion of the surface of the emitter region ...	10/05/1999
5861659	Semiconductor device In a semiconductor device having regions of a vertical pnp bipolar transistor, that is, a collector region composed of a p-type semiconductor region, a base region composed of an n-type semiconductor region and an emitter region composed of a p-type semic...	01/19/1999
5843828	Method for fabricating a semiconductor device with bipolar transistor A semiconductor device with a bipolar transistor that enables to realize a reliable, electric connection of an intrinsic base region with a base electrode is provided. A semiconductor substructure has a surface area. An intrinsic base region is formed in ...	12/01/1998
5804486	Process for manufacturing a high-frequency bipolar transistor structure A high-frequency bipolar transistor structure includes a base region of a first conductivity type formed in a silicon layer of a second conductivity type, the base region comprising an intrinsic base region surrounded by an extrinsic base region, an emitt...	09/08/1998
5726468	Compound semiconductor bipolar transistor A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active laye...	03/10/1998
5719415	Hetero-junction bipolar transistor A hetero-junction bipolar transistor includes: a substrate; a first conductive type collector layer disposed on the substrate; a second conductive type base layer having an external base region; and a first conductive type emitter layer having a bandgap l...	02/17/1998
5705407	Method of forming high performance bipolar devices with improved wiring options High-performance bipolar transistors with improved wiring options and fabrication methods therefore are set forth. The bipolar transistor includes a base contact structure that has multiple contact pads which permit multiple device layouts when wiring to ...	01/06/1998
5631495	High performance bipolar devices with plurality of base contact regions formed around the emitter layer High-performance bipolar transistors with improved wiring options and fabrication methods therefore are set forth. The bipolar transistor includes a base contact structure that has multiple contact pads which permit multiple device layouts when wiring to ...	05/20/1997
5594272	Bipolar transistor with base and emitter contact holes having shorter central portions An insulating film formed on a base region is patterned to form emitter contact holes and base contact holes arranged alternately in such a manner that those contact holes are short in the center portion and become longer toward the peripheral portions, a...	01/14/1997
5583368	Stacked devices Chips having subsurface structures within or adjacent a horizontal trench in bulk single crystal semiconductor are presented. Structures include three terminal devices, such as FETs and bipolar transistors, rectifying contacts, such as pn diodes and Schot...	12/10/1996
5541444	Device and method of manufacturing the same and semiconductor device and method of manufacturing the same A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film,...	07/30/1996
5528066	Bipolar transistor having a collector well with a particular concentration A bipolar transistor module which can be implemented into existing CMOS processes without the use of buried layers of epitaxy is described. The transistor makes use of a synthesis of new ideas to achieve high performance. Extended polysilicon electrodes (...	06/18/1996
5523244	Transistor fabrication method using dielectric protection layers to eliminate emitter defects A method for fabricating a super self-aligned bipolar junction transistor which reduces or eliminates emitter defects caused during critical etching steps by providing a non-critically thick dielectric etch stop (protection) layer (116) during all potenti...	06/04/1996
5523614	Bipolar transistor having enhanced high speed operation through reduced base leakage current A semiconductor device includes an n-type low-resistance region (2) formed on a p-type monocrystalline semiconductor substrate (1), an n-type epitaxial layer (3) formed on the n-type low-resistance region (2), an insulating film (5) formed on the n-type e...	06/04/1996
5500554	Bipolar transistor having reduced base-collector capacitance while maintaining improved cut-off frequency A bipolar transistor with a structure such that it is possible to reduce the parasitic capacity without sacrificing improvements in cut-off frequency fT, in which a P+ -type polycrystalline silicon film 122A is provided on the side w...	03/19/1996

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Class 257/E29.124 - Base electrodes for bipolar transistors (EPO)