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Apparatus for Simulating a High Five
A self-righting hand-arm configuration which is adapted to pivot when struck by a user, thereby simulating a "high five."
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| Number | Title | Issue Date |
| 7429747 | Sb-based CMOS devices A group III-V material CMOS device may have NMOS and PMOS portions that are substantially the same through several of their layers. This may make the CMOS device easy to make and prevent coefficient of thermal expansion mismatches between the NMOS and PMOS portions.... | 09/30/2008 |
| 6605772 | Nanostructured thermoelectric materials and devices Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSex Te1-x /PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of me... | 08/12/2003 |
| 6444896 | Quantum dot thermoelectric materials and devices Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSex Te1-x /PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of me... | 09/03/2002 |
| 4847666 | Hot electron transistors In one embodiment a hot electron transistor uses lead telluride as the host crystal. The desired layers of increased band gap to provide the needed heterojunctions at the emitting and collecting junctions are realized either by substitution of europium an... | 07/11/1989 |
| 4743949 | Infrared optical-electronic device On a semiconductor substrate (1), e.g. of Si, a IIa-metal-fluoride layer (2) and in that a narrow-gap semiconductor layer (3), e.g. of a lead-chalcogenide, is epitaxially grown. In the narrow-gap semiconductor layer (3) one or more infrared sensors (4) ar... | 05/10/1988 |
| 4415531 | Semiconductor materials A novel pseudobinary alloy of Pb1-x Mx S, wherein 0 | 11/15/1983 |
| 4350990 | Electrode for lead-salt diodes A significantly more stable ohmic contact for a lead-salt semiconductor surface, especially for use in infrared lasers. The contact has layers of platinum, palladium or nickel alternating with gold, and then covered with indium. An Au-Pd-Au-In contact is ... | 09/21/1982 |
| 4339764 | PbSx Se1-x semiconductor A high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb]a [Sx Se1-x ]1-a wherein x varies between one and zero, inclusive, and a=0.500&#b1... | 07/13/1982 |
| 4171996 | Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a ... | 10/23/1979 |
| 4170818 | Barrier height voltage reference A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The r... | 10/16/1979 |
| 4137545 | Gate turn-off thyristor with anode rectifying contact to non-regenerative section A gate controlled semiconductor controlled rectifier comprises an integral combination of a regenerative thyristor section and an adjacent non-regenerative section. The non-regenerative section includes rectifying contact means to reduce the lateral curre... | 01/30/1979 |
| 4126732 | Surface passivation of IV-VI semiconductors with As2 S3 The process of coating epitaxial films of lead chalcogenide materials with s2 S3 to insulate the films from the effects of oxygen upon exposure to air.... | 11/21/1978 |
