Class 257/E29.1 - Semiconductor materials other than Group IV, selenium, tellurium, or Group III-V compounds (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.068. This
No. of patents: 39
Last issue date: 03/04/2008

Number	Title	Issue Date
7339187	Transistor structures Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material sele...	03/04/2008
7075111	Nitride semiconductor substrate and its production method A nitride semiconductor substrate having a diameter of 10 mm or more, which has a single-layer structure composed of a nitride semiconductor layer having a basic composition represented by AlxGa1−xN (0≦x≦1), or a multi-layer structure com...	07/11/2006
6670651	Metal sulfide-oxide semiconductor transistor devices A self-aligned enhancement mode metal-sulfide-oxide-compound semiconductor field effect transistor (10) includes a lower sulfide layer that is a mixture of Ga2 S, Ga2 S3, and other gallium sulfide compounds (30), and a sec...	12/30/2003
6451711	Epitaxial wafer apparatus A system for coating the surface of compound semiconductor wafers includes providing a single-wafer epitaxial production system in a cluster-tool architecture with a loading, storage, and transfer modules, a III-V deposition chamber, and an insulator depo...	09/17/2002
6445015	Metal sulfide semiconductor transistor devices A self-aligned enhancement mode metal-sulfide-compound semiconductor field effect transistor (10) includes a lower sulfide layer that is a mixture of Ga2 S, Ga2 S3, and other gallium sulfide compounds (30), and a second in...	09/03/2002
6355941	Semiconductor device A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a ...	03/12/2002
6312617	Conductive isostructural compounds A family of isostructural compounds have been prepared having the general formula An Pbm Bin Q2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electr...	11/06/2001
6207976	Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof A first surface layer made of compound semiconductor material is defined in a surface area of a substrate. A first intermediate layer is formed on the surface layer, the first intermediate layer being made of compound material having Ga as a III group ele...	03/27/2001
5877041	Self-aligned power field effect transistor in silicon carbide The present invention is directed to a silicon carbide field effect transistor. The FET is formed on a silicon carbide monocrystalline substrate. An insulative material gate having a pair of spaced apart sidewalls is patterned on the substrate. The insula...	03/02/1999
5831286	High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb3, P3, or As3. The skutterudite-type crystal lattice structur...	11/03/1998
5800794	Clathrate compounds and processes for production thereof A silicon clathrate compound of the following composition: (Li4)x Ae6 Si46 wherein (Li4) represents a Li4 cluster; Ae is an alkaline earth metal element selected from the group consisting of Ba, Sr a...	09/01/1998
5760462	Metal, passivating layer, semiconductor, field-effect transistor A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device i...	06/02/1998
5682041	Electronic part incorporating artificial super lattice An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition ...	10/28/1997
5670800	Semiconductor device and method for fabricating the same A semiconductor device includes a layer 16 of intermetallic compound layer 16 formed on a base substrate 10. The intermetallic compound is a ternary intermetallic compound 16 mixing a set amount of In with one of CoGa, NiGa, FeGa, CoAl, NiAl and FeAl . Tw...	09/23/1997
5658834	Forming B_1-x C_x semiconductor layers by chemical vapor deposition Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film h...	08/19/1997
5594263	Semiconductor device containing a semiconducting crystalline nanoporous material This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a "p" semiconductor contacting an "n" semiconductor. Said device characterized in that at least one of said "p" or "n" semiconductor is a na...	01/14/1997
5591987	Semiconductor MIS field effect transistor with semi-amorphous semiconductor material A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a ...	01/07/1997
5539248	Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF) A semiconductor device with an improved insulating and passivating layer including the steps of providing a gallium arsenide substrate with a surface, and crystallographically lattice matching an insulating and passivating layer of indium gallium fluoride...	07/23/1996
5468978	Forming B_1-x C_x semiconductor devices by chemical vapor deposition Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film h...	11/21/1995
5358666	Ohmic electrode materials for semiconductor ceramics and semiconductor ceramics elements made thereof An ohmic electrode material for semiconductor ceramics comprises 48-96 weight % of aluminum and 4-52 weight % of silicon. A semiconductor ceramics element includes a semiconductor ceramics such as that of barium titanate system semiconductor ceramics and ...	10/25/1994
5262350	Forming a non single crystal semiconductor layer by using an electric current A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a ...	11/16/1993
5247349	Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably...	09/21/1993
5213906	Composite material comprising a layer of a III-V compound and a layer of rare earth pnictide, production process and application The present invention relates to a composite material. This material comprises at least one layer A of III-V compound and one epitaxial layer B on said layer of III-V compounds, the epitaxial layer corresponding to the empirical formula REPc, where RE is ...	05/25/1993
5032472	Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semicond...	07/16/1991
5030583	Method of making single crystal semiconductor substrate articles and semiconductor device A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon carbide, and gallium nitride. The textured substrate comprises a b...	07/09/1991
5006914	Single crystal semiconductor substrate articles and semiconductor devices comprising same A textured substrate is disclosed which is amenable to deposition thereon of epitaxial single crystal films of materials such as diamond, cubic boron nitride, boron phosphide, beta-silicon carbide, and gallium nitride. The textured substrate comprises a b...	04/09/1991
4847666	Hot electron transistors In one embodiment a hot electron transistor uses lead telluride as the host crystal. The desired layers of increased band gap to provide the needed heterojunctions at the emitting and collecting junctions are realized either by substitution of europium an...	07/11/1989
4822581	Catenated phosphorus materials and their preparation High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semicond...	04/18/1989
4818636	Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semicond...	04/04/1989
4732659	Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor Thin film field effect transistors utilize MPx as the active switched semiconductor where M is at least one alkali metal, P is at least one pnictide, and x ranges from 15 to infinity. Phosphorus is preferred as the dominant pnictide and potassi...	03/22/1988
4713192	Doping of catenated phosphorus materials High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful se...	12/15/1987
4670241	P₄ gas generator using the alkali metal polyphosphide MP₁₅ MP15, where M is an alkali metal is used in a generator of P4 gas. KP15 is preferred. The generator is heated to produce the P4 gas. The generator may be used in various deposition processes such as chemical vap...	06/02/1987
4620968	Monoclinic phosphorus formed from vapor in the presence of an alkali metal Monoclinic phosphorus is produced in a single source vapor transport apparatus comprising a sealed evacuated ampoule containing a mixture or compound of phosphorus and an alkali metal with the phosphorus to alkali metal ratio being 11 or greater. The char...	11/04/1986
4581620	Semiconductor device of non-single crystal structure A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a ...	04/08/1986
4558340	Thin film field effect transistors utilizing a polypnictide semiconductor Thin film field effect transistors utilize MPx as the active switched semiconductor where M is at least one alkali metal, P is at least one pnictide, and x ranges from 15 to infinity. Phosphorus is preferred as the dominant pnictide and potassi...	12/10/1985
4439399	Quaternary alloy A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the formation of p-n junctions....	03/27/1984
4394672	Titanium dioxide rectifier This specification discloses a titanium dioxide rectifier element. A pair of spaced platinum electrodes are on a titanium dioxide main body. Groupings of PtTi3 are interspersed throughout the titanium dioxide main body thereby forming a rectifi...	07/19/1983
4361951	Method of fabricating a titanium dioxide rectifier This specification discloses a method of fabricating a titanium rectifier circuit element. A titanium dioxide main body is formed with a pair of spaced faces each of which having thereon a platinum electrode. A dc voltage is applied across this structure,...	12/07/1982
4170818	Barrier height voltage reference A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The r...	10/16/1979

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Class 257/E29.1 - Semiconductor materials other than Group IV, selenium, tellurium, or Group III-V compounds (EPO)