Quotables
"This is the patent age of new inventions for killing bodies, and for saving souls. All propagated with the best intentions."
Lord Byron ;
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7211464 | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bu... | 05/01/2007 |
| 6683328 | Power semiconductor and fabrication method A power semiconductor containing an anode disposed on either a top side or a bottom side is described. A cathode is disposed on the side that is unoccupied by the anode, and edge terminations are provided on the top side. The power semiconductor is charac... | 01/27/2004 |
| 6664559 | Supermolecular structures and devices made from same Supermolecular structures and devices made from same. Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules within a host matrix to take advan... | 12/16/2003 |
| 6656774 | Method to enhance operating characteristics of FET, IGBT, and MCT structures Doping of the P type base region in a MOSFET or an IGBT with a combination of boron and one or more of indium, aluminum and gallium, provides a structure having a lower P type doping level in the channel portion of the structure than in the remainder of t... | 12/02/2003 |
| 6657251 | Semiconductor memory device having memory transistors with gate electrodes of a double-layer stacked structure and method of fabricating the same A semiconductor memory device has gate electrodes which are formed on a gate insulating film in direct contact therewith and have nitrogen-doped regions on their sides, or gate electrodes which use a nitrogen-doped polysilicon film. The widthwise end port... | 12/02/2003 |
| 6635950 | Semiconductor device having buried boron and carbon regions, and method of manufacture thereof To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an ... | 10/21/2003 |
| 6597016 | Semiconductor device and method for fabricating the same An Si1-y Gey layer (where 0 | 07/22/2003 |
| 6593640 | Bipolar transistor and methods of forming bipolar transistors A bipolar transistor comprises a base region and an an extrinsic base region being located generally adjacent to the base region. The extrinsic base region has implanted therein a dopant and a dopant diffusion-retarding substance. The dopant diffusion-ret... | 07/15/2003 |
| 6559468 | Molecular wire transistor (MWT) Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where o... | 05/06/2003 |
| 6507070 | Semiconductor device and method of making A semiconductor device (10) is formed that is bi-lateral and has a voltage blocking capability that is well suited to applications involving portable electronics. The semiconductor device has an epitaxial layer (14) that is formed on a semiconductor subst... | 01/14/2003 |
| 6504230 | Compensation component and method for fabricating the compensation component A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are provided as p-conductive regions, which are doped with indium,... | 01/07/2003 |
| 6475887 | Method of manufacturing semiconductor device A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth ... | 11/05/2002 |
| 6465864 | Diode structure on MOS wafer Three diode structures on a metal-oxide-semiconductor (MOS) wafer. Each diode structure is capable of reducing parasitic current through the wafer and hence increasing the power conversion efficiency of a voltage step-up circuit.... | 10/15/2002 |
| 6459140 | Indium-enhanced bipolar transistor A method to improve the characteristics of bipolar silicon high-frequency transistor by adding indium into the base of the transistor is described. Instead of replacing boron in the base with indium to improve the beta-Early voltage product, at the price ... | 10/01/2002 |
| 6455911 | Silicon-based semiconductor component with high-efficiency barrier junction termination A silicon-based semiconductor component includes a high-efficiency barrier junction termination. In the semiconductor component, a silicon semiconductor region takes on the depletion region of an active area of the semiconductor component. The junction te... | 09/24/2002 |
| 6376860 | Semiconductor device One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600° C. or less. The crystallization develops from a region where the element has been intr... | 04/23/2002 |
| 6358807 | Bipolar semiconductor device and method of forming same having reduced transient enhanced diffusion A BiCMOS semiconductor device and a method of forming same are disclosed. A bipolar transistor region is formed adjacent a CMOS device region within a semiconductor substrate. Carbon is implanted in an amount ranging from about 1013 to about 10... | 03/19/2002 |
| 6274466 | Method of fabricating a semiconductor device A method for fabricating a semiconductor device to increase the effective concentration of a doped region. A first dopant is implanted into a substrate. A second dopant is implanted into the substrate. The first dopant has a lower diffusion coefficient, a... | 08/14/2001 |
| 6221707 | Method for fabricating a transistor having a variable threshold voltage A method for fabricating a transistor having a variable threshold voltage is disclosed. Energy levels of a transistor can be represented by a valance band, a conduction band, and a Fermi level. In order to fabricate a transistor with a variable threshold ... | 04/24/2001 |
| 6204153 | Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device A fabrication process and transistor are described in which a transistor having decreased susceptibility to punchthrough and increased resistance to impurity diffusion is formed. One or more argon doped silicon epitaxial layers are formed superjacent a se... | 03/20/2001 |
| 6198157 | Semiconductor device having buried boron and carbon regions To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an ... | 03/06/2001 |
| 6198141 | Insulated gate semiconductor device and method of manufacturing the same Dot-pattern-like impurity regions are artificially and locally formed in a channel forming region. The impurity regions restrain the expansion of a drain side depletion layer toward the channel forming region to prevent the short channel effect. The impur... | 03/06/2001 |
| 6153920 | Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby A semiconductor device having a carbon-containing region with an advantageous concentration profile is disclosed. The carbon is introduced into a region of the substrate and at a depth below the space-charge layer of the device and at a concentration such... | 11/28/2000 |
| 6140213 | Semiconductor wafer and method of manufacturing same In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to... | 10/31/2000 |
| 6109207 | Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or ... | 08/29/2000 |
| 6087683 | Silicon germanium heterostructure bipolar transistor with indium doped base The present invention provides, in one embodiment, a method of fabricating a heterostructure bipolar transistor. This particular embodiment comprises forming a n-type doped region in a semiconductor substrate to form a collector, epitaxially forming a bas... | 07/11/2000 |
| 6043139 | Process for controlling dopant diffusion in a semiconductor layer Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.... | 03/28/2000 |
| 6013129 | Production of heavily-doped silicon Provided is a method for the production of a heavily-doped silicon wherein an element X whose ionic radius is larger than Si and an element Y whose ionic radius is smaller than Si are added to a Si crystal growing atmosphere at an atomic ratio of X:Y=1:(1... | 01/11/2000 |
| 6005285 | Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device A fabrication process and transistor are described in which a transistor having decreased susceptibility to punchthrough and increased resistance to impurity diffusion is formed. One or more argon doped silicon epitaxial layers are formed superjacent a se... | 12/21/1999 |
| 5965929 | Bipolar Silicon transistor with arsenic and phosphorous ratio A bipolar silicon transistor includes at least one emitter zone with n+ arsenic doping and with a phosphorus doping. The ratio between arsenic dopant concentration and phosphorus dopant concentration is between 10:1 and 500:1 in the at least o... | 10/12/1999 |
| 5939769 | Bipolar power transistor with high collector breakdown voltage and related manufacturing process There is described a bipolar power transistor with high breakdown voltage, obtained in a heavily doped semiconductor substrate of the N type, over which a lightly doped N type layer, constituting a collector region of the transistor, is superimposed. The ... | 08/17/1999 |
| 5923997 | Semiconductor device One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600° C. or less. The crystallization develops from a region where the element has been intr... | 07/13/1999 |
| 5874348 | Semiconductor wafer and method of manufacturing same In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to... | 02/23/1999 |
| 5866946 | Semiconductor device having a plug for diffusing hydrogen into a semiconductor substrate A semiconductor device formed on a semiconductor substrate includes a layer which is substantially a barrier to hydrogen formed on the semiconductor substrate. A plug, formed of a material through which hydrogen can diffuse, is disposed in an opening thro... | 02/02/1999 |
| 5863831 | Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or ... | 01/26/1999 |
| 5821563 | Semiconductor device free from reverse leakage and throw leakage A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an element at least one selected from the group consisting of... | 10/13/1998 |
| 5821147 | Integrated circuit fabrication Indium is employed as the shallow portion of a lightly doped drain transistor.... | 10/13/1998 |
| 5808321 | Semiconductor device with recrystallized active area One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600° C. or less. The crystallization develops from a region where the element has been intr... | 09/15/1998 |
| 5767557 | PMOSFETS having indium or gallium doped buried channels and n+polysilicon gates and CMOS devices fabricated therefrom Sub-micron PMOSFETs including n+ polysilicon gates and buried channels having impurity concentrations comprising indium or gallium are provided. The buried channel PMOSFETs have improved short channel characteristics and are particularly suitab... | 06/16/1998 |
| 5763319 | Process for fabricating semiconductor devices with shallowly doped regions using dopant compounds containing elements of high solid solubility A method for manufacturing shallowly doped semiconductor devices. In the preferred embodiment, the method includes the steps of: (a) providing a substrate where the substrate material is represented by the symbol Es (element of the substrate); and (b) imp... | 06/09/1998 |
