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| Number | Title | Issue Date |
| 7432175 | Quantum dots nucleation layer of lattice mismatched epitaxy Lattice mismatched epitaxy and methods for lattice mismatched epitaxy are provided. The method includes providing a growth substrate and forming a plurality of quantum dots, such as, for example, AlSb quantum dots, on the growth substrate. The method further include... | 10/07/2008 |
| 7408235 | Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wa... | 08/05/2008 |
| 7407865 | Epitaxial growth method An epitaxial growth method for forming a high-quality epitaxial growth semiconductor wafer is provided. The method includes forming a single crystalline layer on a single crystalline wafer; forming a mask layer having nano-sized dots on the single crystalline layer;... | 08/05/2008 |
| 7402832 | Quantum dots of group IV semiconductor materials The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free s... | 07/22/2008 |
| 7399988 | Photodetecting device and method of manufacturing the same A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots embedded by the embedding layer is formed. A quantum well structure inclu... | 07/15/2008 |
| 7372067 | Refractive index changing apparatus and method Refractive index changing apparatus includes quantum dots each having discrete energy levels including ground level and excited level, the excited level being higher than the ground level even if energy due to ambient temperature is provided on the quantum dots, bar... | 05/13/2008 |
| 7358101 | Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots The present invention relates to a method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots, it adopts high temperature processing and atmospheric-pressure chemical vapor deposition (APCVD), and directly deposit to form a silicon n... | 04/15/2008 |
| 7316967 | Flow method and reactor for manufacturing noncrystals A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method. ... | 01/08/2008 |
| 7265375 | Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically ... | 09/04/2007 |
| 7160822 | Method of forming quantum dots for extended wavelength operation A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots c... | 01/09/2007 |
| 7102152 | Device and method for emitting output light using quantum dots and non-quantum fluorescent material A device and method for emitting output light utilizes both quantum dots and non-quantum fluorescent material to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of t... | 09/05/2006 |
| 7087923 | Photon source and a method of fabricating a photon source A photon source comprising a quantum dot layer having a plurality of quantum dots with an n-modal distribution in emission wavelength, said n-modal distribution in emission wavelength comprising n peaks in a plot of dot density as a function of emission wavelength w... | 08/08/2006 |
| 7045811 | Signal amplification using architectures of nanodots and connecting channels Particle localization by geometrical nanostructures allows for the fabrication of artificial atoms and molecules suitable for use as building blocks for molecular electronic devices. Artificial lattices made from the artificial atoms and molecules can be used to cre... | 05/16/2006 |
| 6930318 | Device for reinitializing a quantum bit device having two energy states The device for reinitializing to a state |0> a quantum bit device, or Qubit as it is otherwise known, having two states |0> and |1> associated with respective energy levels E0 and E1 where E0 | 08/16/2005 |
| 6696313 | Method for aligning quantum dots and semiconductor device fabricated by using the same A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D)... | 02/24/2004 |
| 6690027 | Method for making a device comprising layers of planes of quantum dots A method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe, or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate is described. Electrochemical treatment of the stack of layers to make the layers porous and f... | 02/10/2004 |
| 6683013 | Method of formation for quantum dots array using tilted substrate Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using th... | 01/27/2004 |
| 6667492 | Quantum ridges and tips The present invention provides a quantum structure product comprising a substrate having quantum ridges and quantum tips on at least one surface thereof. In some embodiments of the invention quantum ridges may support quantum wires and the quantum tips ma... | 12/23/2003 |
| 6605772 | Nanostructured thermoelectric materials and devices Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSex Te1-x /PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of me... | 08/12/2003 |
| 6596555 | Forming of quantum dots A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth ... | 07/22/2003 |
| 6583436 | Strain-engineered, self-assembled, semiconductor quantum dot lattices A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, a... | 06/24/2003 |
| 6579780 | Method for growing a compound semiconductor, quantum well structure using the same, and compound semiconductor device including the same A method for growing a compound semiconductor includes a first formation step of forming a first group III-V compound layer; a second formation step of forming a second group III-V compound layer including nitrogen and at least one group V element other t... | 06/17/2003 |
| 6573527 | Quantum semiconductor device including quantum dots and a fabrication process thereof A quantum semiconductor device includes intermediate layers of a first semiconductor crystal having a first lattice constant and stacked repeatedly, and a plurality of quantum dots of a second semiconductor crystal having a second lattice constant differe... | 06/03/2003 |
| 6525337 | Light and/or electron element An optical and/or electronic device is operated by degeneracy of density of states caused by confinement of electrons in a fractal region having a self-similarity. An AlGaAs/GaAs light emitting device is configured by distributing GaAs quantum dots in a f... | 02/25/2003 |
| 6512242 | Resonant-tunneling electronic transportors An electronic transportor that allows for the resonant tunneling of electrons between guided states, such as those found in a quantum wire or a line defect in a solid, and localized states, such as those found in a quantum dot or a point defect in a solid... | 01/28/2003 |
| 6507042 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device with quantum dots and a method of manufacturing the same, and a structure of the semiconductor device which can control an emission wavelength of the quantum dots and a method of manufacturing the sa... | 01/14/2003 |
| 6489041 | Magnetic body formed by quantum dot array using non-magnetic semiconductor A practically realizable semiconductor magnetic body having a flat-band structure is disclosed. The semiconductor magnetic body is formed by semiconductor quantum dots arranged on lattice points such that electrons can transfer between neighboring quantum... | 12/03/2002 |
| 6459120 | Semiconductor device and manufacturing method of the same A regular tetrahedral groove is formed in a wafer, and a memory unit is formed, which includes a channel layer as a first semiconductor layer to serve as a channel, a three-layer structure floating layer as a second semiconductor layer to serve as a float... | 10/01/2002 |
| 6452205 | Sparse-carrier devices and method of fabrication A sparse-carrier device including a crystal structure (10) formed of a first material and having a crystallographic facet (26) with a width (w) and a length and quantum dots (30) formed of a second material and positioned in at least one row on the crysta... | 09/17/2002 |
| 6444896 | Quantum dot thermoelectric materials and devices Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSex Te1-x /PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of me... | 09/03/2002 |
| 6392914 | Storage device encompassing a diffusion process and a dissipation process of information carriers and storage method thereof A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer ha... | 05/21/2002 |
| 6375737 | Method of self-assembly silicon quantum dots A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an an... | 04/23/2002 |
| 6333516 | Quantum effect device An inverter comprising four quantum dot cells. When the quantum dot cells are arranged in 9 o'clock direction, 12 o'clock direction and 3 o'clock direction, the quantum dot cell is arranged in 6 o'clock direction.... | 12/25/2001 |
| 6313479 | Self-organized formation of quantum dots of a material on a substrate Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. T... | 11/06/2001 |
| 6294794 | Non-linear optical device using quantum dots A non-linear optical device includes a plurality of quantum dots in an active layer such that the quantum dots have a composition or doping modified asymmetric in a direction perpendicular to the active layer.... | 09/25/2001 |
| 6281519 | Quantum semiconductor memory device including quantum dots A quantum semiconductor memory device includes a quantum structure formed on a substrate, wherein the quantum structure includes a plurality of self-organized quantum dots forming a strained heteroepitaxial system with respect to the substrate and an accu... | 08/28/2001 |
| 6242326 | Method for fabricating compound semiconductor substrate having quantum dot array structure A method for fabricating a compound semiconductor substrate having a quantum dot array structure includes the steps of forming a plurality of dielectric thin layer patterns on a substrate, thereby forming an exposed area of the substrate, sequentially for... | 06/05/2001 |
| 6235547 | Semiconductor device and method of fabricating the same In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave secti... | 05/22/2001 |
| 6221720 | Method of making an electronic device and the same Laminated layers including semiconductor or metal thin layers and insulative thin layers are formed on a substrate and after the laminated layers are patterned, the laminated layers are oxidized from their side to form an oxidized area. This way, a 0-dime... | 04/24/2001 |
| 6211530 | Sparse-carrier devices and method of fabrication A sparse-carrier device includes a crystal structure with a crystallographic facet having contacts at opposite ends. Quantum dots are formed in first and second rows on the facet approximately one quantum dot wide and a plurality of quantum dots long, the... | 04/03/2001 |
