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| Number | Title | Issue Date |
| 7385271 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo... | 06/10/2008 |
| 6373079 | Thyristor with breakdown region The thyristor is based on a semiconductor body with an anode-side base zone of the first conductivity type and one or more cathode-side base zones of the opposite, second conductivity type. Anode-side and cathode-side emitter zones are provided, and at le... | 04/16/2002 |
| 6093955 | Power semiconductor device A semiconductor device having two or more p-n junctions, being in particular a bipolar transistor or a thyristor. The device has an gold ion implant in a region of the device between two of or the two p-n junctions, which region is the base in the case of... | 07/25/2000 |
| 6066864 | Thyristor with integrated dU/dt protection Given too great a dU/dt load of a thyristor, this can trigger in uncontrolled fashion in the region of the cathode surface. Since the plasma only propagates poorly there and the current density consequently reaches critical values very quickly, there is t... | 05/23/2000 |
| 5939736 | Insulated gate thyristor A semiconductor device for conducting a in current across a cathode electrode and an anode electrode, includes a thyristor formed of an n+ floating region connected electrically to the cathode electrode, a p+ anode connected electric... | 08/17/1999 |
| 5914502 | Assembly of thyristors having a common cathode A monolithic assembly of thyristors having a common cathode and a single gate includes a lightly-doped substrate, several anode regions, on the front surface side, a cathode gate layer on the rear surface side of the substrate, a cathode layer on the rear... | 06/22/1999 |
| 5900651 | High-withstand-voltage semiconductor device A distance from the bottom of a mesa groove to an underlying pn junction exceeds the elongation of a depletion layer from the underlying pn junction that occurs when a voltage nearly equal to a target withstand voltage is applied, and a groove width of a ... | 05/04/1999 |
| 5818074 | Smooth switching thyristor A semiconductor thyristor has multiple different semiconductor layers with regions arranged in predetermined configurations to cause a plasma of carriers to flow in an expanding volume over a finite time to reach a full conduction condition, after the thy... | 10/06/1998 |
| 5793066 | Base resistance controlled thyristor structure with high-density layout for increased current capacity An insulated gate base resistance controlled thyristor with a high controllable current capability is described. The device has a high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. T... | 08/11/1998 |
| 5767555 | Compound semiconductor device controlled by MIS gate, driving method therefor and electric power conversion device using the compound semiconductor device and the driving method A compound semiconductor device including a MISFET and a thyristor connected in series wherein either the withstanding voltage between the MISFET p base layer and the thyristor p base layer is set lower than the withstanding voltage of the MISFET, the MIS... | 06/16/1998 |
| 5710442 | Semiconductor device and method of manufacturing same A semiconductor device sets an impurity density of a p base layer in a bevel end-face region to a density lower than that in an operating region and has a parasitic channel preventive region provided between the bevel end-face region and the operating reg... | 01/20/1998 |
| 5644150 | Insulated gate thyristor A double gate type insulated gate thyristor is provided which improves the breakdown withstand capability by turning on at low on-voltage by a thyristor operation mode and by turning off at high speed by an IGBT operation mode. In the insulated gate thyri... | 07/01/1997 |
| 5637888 | Insulated gate thyristor The maximum controllable current of an insulated gate thyristors is improved by optimizing the length and sheet resistance of the poly-silicon constituting the gate electrodes. The device has an n- base layer with high resistivity, on the first... | 06/10/1997 |
| 5587595 | Lateral field-effect-controlled semiconductor device on insulating substrate A field-effect-controlled semiconductor device has a cathode, an anode, and a gate, and extends laterally on a first insulating layer covering a substrate. The device includes a main thyristor, a MOSFET switch and a diode which connects a highly doped reg... | 12/24/1996 |
| 5561077 | Dielectric element isolated semiconductor device and a method of manufacturing the same A high-breakdown voltage semiconductor device and a fabrication method are disclosed. A dielectric layer (3) dielectrically isolates a semiconductor substrate (1) from a n- type semiconductor layer (2). An n+ type semiconductor regi... | 10/01/1996 |
| 5550392 | Semiconductor switching devices A process for manufacturing a semiconductor switching device (such as a thyristor device) comprises: etching a face of a semiconductor body to provide islands and channels which define a mesa-contoured surface; diffusing dopant of a first conductivity typ... | 08/27/1996 |
| 5489789 | Semiconductor device A P type source region is formed in a grid mesh-like pattern in one major surface portion of an N- type semiconductor substrate. A P type base region and P- type base region are each formed in the one major surface portion of the N... | 02/06/1996 |
| 5485030 | Dielectric element isolated semiconductor device and a method of manufacturing the same A high-breakdown voltage semiconductor device and a fabrication method are disclosed. A dielectric layer dielectrically isolates a semiconductor substrate from an n- type semiconductor layer. An n+ type semiconductor region having ... | 01/16/1996 |
| 5455434 | Thyristor with breakdown region A thyristor includes a semiconductor body with a surface. The semiconductor body has an inner zone of a first conduction type; a cathode-side base zone of a second conduction type opposite the first type, the base zone having a recess formed therein; a la... | 10/03/1995 |
| 5324966 | MOS-controlled thyristor The present invention has for its object to provide a planar MOS-controlled thyristor of improved main thyristor turn-ON characteristics and a vertical MOS-controlled thyristor of improved main thyristor turn-ON characteristics and increased integration d... | 06/28/1994 |
| 5319221 | Semiconductor device with MISFET-controlled thyristor MOS-controlled thyristor is formed of a P-type first base layer (23), an N-type floating emitter layer (24), and a P-type second base layer (25) on an N- -type base layer (14), by a double diffusion process. The thyristor mode is realized early... | 06/07/1994 |
| 5317172 | PNPN semiconductor device capable of supporting a high rate of current change with time A PNPN semiconductor device has an inner P-type region which includes at least one ridge which extends into its outer N-type region and terminates short of the outer boundary of the outer N-type region, the inner P-type region includes a formation which i... | 05/31/1994 |
| 5086242 | Fast turn-off of thyristor structure A fast turn-off thyristor including a first active shunt region in the cathode gate region connected electrically to the anode terminal for shunting carriers around the anode gate region in response to the thyristor being on and a second shunt region in t... | 02/04/1992 |
| 5081050 | Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle () is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high e... | 01/14/1992 |
| 5021855 | Gate turn-off thyristor A gate turn-off thyristor includes a cathode emitter of n-type, a cathode base of p-type, an anode base of n-type and an anode emitter of p-type. A gate electrode is electrically connected to the p cathode base to enclose and define an elemental gate turn... | 06/04/1991 |
| 5017991 | Light quenchable thyristor device A thyristor device comprising an SI (Static induction) thyristor or beam base thyristor and an SIT (static induction transistor) or SIT-mode bipolar transistor connected to the gate of the thyristor in order to make it possible to turn-on and-off a direct... | 05/21/1991 |
| 5003367 | Sucking electrode for shortening the turn-off time in a semiconductor component A sucking electrode for shortening the turn-off time in a semiconductor component includes a diffusion zone of the sucking electrode, a zone adjoining the diffusion zone of the sucking electrode defining a junction therebetween, and a metal short-circuit ... | 03/26/1991 |
| 5003368 | Turn-off thyristor In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle () is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high e... | 03/26/1991 |
| 4994696 | Turn-on/off driving technique for insulated gate thyristor A turn-on/off driving method for an insulated gate thyristor which has a first gate electrode insulatively provided above a first base layer and functioning as the gate of MOSFET, and a second gate electrode formed on the second base layer. To execute the... | 02/19/1991 |
| 4982258 | Metal oxide semiconductor gated turn-off thyristor including a low lifetime region In a depletion mode thyristor of the type including a regenerative portion and a non-regenerative portion, the turn-off time for the thyristor is substantially reduced without producing a corresponding increase in the on-resistance of the device by provid... | 01/01/1991 |
| 4959703 | Turn-on/off driving technique for insulated gate thyristor A turn-on/off driving technique for an insulated gate thyristor which has a first gate electrode insulatively provided above a first base layer and fuctioning as a gate of MOSFET, and a second gate electrode formed on the second base layer. To drive the t... | 09/25/1990 |
| 4951109 | Turn-off power semiconductor component Conventional turnoff power semiconductor devices each comprise a p-n junction blocking in case of turnoff, one zone of which, lying at the p-n junction, has a high doping gradient. But this produces a low dynamic voltage stability characteristic for the p... | 08/21/1990 |
| 4908687 | Controlled turn-on thyristor A multistage amplifying thyristor incorporates integral current control resistor regions between adjacent thyristor stages for limiting turn-on current in all but the main thyristor stage. The thyristor is essentially immune from di/dt turn-on failure wit... | 03/13/1990 |
| 4901130 | Protection thyristor with auxiliary gate The instant invention relates to protection semiconductive components, thrystors or triacs. Those components do not usually comprise gate electrodes and are triggered by an overvoltage between the main electrodes. When one wishes to obtain however a gate ... | 02/13/1990 |
| 4866315 | Turn-on/off driving technique for insulated gate thyristor A turn-on/off driving technique for an insulated gate thyristor which has a first gate electrode insulatively provided above a first base layer and functioning as a gate of MOSFET, and a second gate electrode formed on the second base layer. To drive the ... | 09/12/1989 |
| 4841350 | Static induction photothyristor having a non-homogeneously doped gate In a photothyristor provided with a cathode, a gate and an anode, the impurity densities of gate (base) portions 20 and 21 are made unequal to each other. The minority carriers are stored in the high impurity density regions 20, the majority carriers are ... | 06/20/1989 |
| 4829348 | Disconnectable power semiconductor component A field-controlled thyristor having a sequence of layers consisting of anode layer, channel layer and gate regions and cathode regions, which regions are alternately arranged at the cathode side, wherein an improvement in the turn-off gain is achieved by ... | 05/09/1989 |
| 4825270 | Gate turn-off thyristor The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small b... | 04/25/1989 |
| 4757025 | Method of making gate turn off switch with anode short and buried base A GTO switch is provided in which the upper base layer (gate) is formed by a diffusion step. An epitaxial layer grown over the upper base layer contains cathode and gate diffusions which are separated by an undiffused gap. This "buried base" technique pro... | 07/12/1988 |
| 4717940 | MIS controlled gate turn-off thyristor An MIS controlled gate turn-off thyristor includes a pnpn structure comprised of a first emitter layer, a first base layer, a second base layer and a second emitter layer, and a turn-off MIS transistor for short-circuiting the second base layer to the sec... | 01/05/1988 |
