Did You Know...
...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Number | Title | Issue Date |
| 7396777 | Method of fabricating high-k dielectric layer having reduced impurity Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed o... | 07/08/2008 |
| 7323709 | Method for increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi... | 01/29/2008 |
| 7259437 | High performance spin-valve transistor The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of spin-valve transistors which can be used in numerous fields of electronics.... | 08/21/2007 |
| 7166881 | Multi-sensing level MRAM structures The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially co... | 01/23/2007 |
| 6703283 | Discontinuous dielectric interface for bipolar transistors A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the two regions of semi... | 03/09/2004 |
| 6674130 | High performance PD SOI tunneling-biased MOSFET A new type of partially-depleted SOI MOSFET is described in which a tunneling connection between the gate and the base is introduced. This is achieved by using a gate dielectric whose thickness is below its tunneling threshold. The gate pedestal is made s... | 01/06/2004 |
| 6674099 | MISFET A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG2) and a source mid-gap value (EGM2), the source layer having a source Fermi-Level (EF2). A drai... | 01/06/2004 |
| 6656812 | Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process A vertical bipolar transistor includes a semiconductor substrate, an extrinsic collector layer in the semiconductor substrate, an intrinsic collector on the extrinsic collector, a lateral isolating region surrounding an upper part of the intrinsic collect... | 12/02/2003 |
| 6518105 | High performance PD SOI tunneling-biased MOSFET A new type of partially-depleted SOI MOSFET is described in which a tunneling connection between the gate and the base is introduced. This is achieved by using a gate dielectric whose thickness is below its tunneling threshold. The gate pedestal is made s... | 02/11/2003 |
| 6380010 | Shielded channel transistor structure with embedded source/drain junctions Microelectronic structures embodying the present invention include a silicon pillar contiguous with a bulk semiconductor, the pillar being surrounded by a shallow trench isolation insulator, which has been recessed to receive polysilicon and a superjacent... | 04/30/2002 |
| 6320211 | Semiconductor device and electronic device by use of the semiconductor A semiconductor device is provided with a collector region having a first material of a first conductivity type. A base region is provided having a second material of the opposite conductivity type, and an emitter region is also provided having a third ma... | 11/20/2001 |
| 6284582 | MOS-gate tunneling-injection bipolar transistor A method of forming a metal oxide semiconductor (MOS)-controlled bipolar transistor includes tilt angle implanting a first impurity into a semiconductor substrate and implanting a second impurity into the semiconductor substrate to form an emitter and a c... | 09/04/2001 |
| 6274913 | Shielded channel transistor structure with embedded source/drain junctions Microelectronic structures embodying the present invention include a silicon pillar contiguous with a bulk semiconductor, the pillar being surrounded by a shallow trench isolation insulator, which has been recessed to receive polysilicon and a superjacent... | 08/14/2001 |
| 6228732 | Tunnel nitride for improved polysilicon emitter A method is disclosed for reproducibly and controllably enhancing the current gain of a bipolar junction transistor. Prior to depositing an extrinsic emitter region of polycrystalline silicon, the surface of a monocrystalline silicon substrate is nitridiz... | 05/08/2001 |
| 6211562 | Homojunction semiconductor devices with low barrier tunnel oxide contacts A homojunction bipolar transistor with performance characteristics similar to more costly heterojunction or retrograde base transistors. The high emitter resistivity found in prior homojunction devices is circumvented using a low work function material la... | 04/03/2001 |
| 6118136 | Superlatticed negative-differential-resistance functional transistor The invention is to develop a high-speed low power consumption resonant tunneling element--a superlatticed negative-differential-resistance (NDR) functional transistor. The proposed element exhibits amplification and obvious NDR phenomena simultaneously. ... | 09/12/2000 |
| 5949103 | MOSFET with tunneling insulation and fabrication method thereof A tunneling insulation film MOSFET and a fabrication method for a tunneling insulation film MOSFET avoid a short channel effect and prevent a punchthrough phenomenon by forming a tunneling insulation film between a channel area and one of source area and ... | 09/07/1999 |
| 5734183 | Heterojunction bipolar transistor structure A semiconductor device is provided with an emitter area and a collector area of a first conductive type and a base area of a second conductive type, arranged in a horizontal structure. The semiconductor device comprises an area constituting at least a par... | 03/31/1998 |
| 5712491 | Lateral theta device A lateral THETA device formed of a sandwich of first and second layers of semiconductor material forming a heterojunction therebetween and a two dimensional carrier gas in the second layer. First and second spaced electrodes are disposed on the surface of... | 01/27/1998 |
| 5646418 | Quantum effect switching device A quantum effect switching device comprising a substrate 12, first and second tunnel barriers 14 and 18, and a quantum well 16. The current between a drain region 20 and the substrate 12 can be switched by placing a potential on a gate layer 24. The poten... | 07/08/1997 |
| 5610435 | Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio A bipolar transistor having a control electrode area of a semiconductor of a first conductive type, and first and second main electrode areas positioned in contact with the control electrode area and composed of a semiconductor of a second conductive type... | 03/11/1997 |
| 5541422 | Tunnel diode with several permanent switching states The invention relates to a tunnel diode provided with two metallically conducting electrodes (1, 2) with an insulating dielectric (3) in between, which forms a barrier with a barrier level for electrons and which has a thickness such that electrons can tu... | 07/30/1996 |
| 5486704 | Semiconductor device and electronic device by use of the semiconductor A semiconductor devive comprises; a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region and capable of flowing therein a tunnel current;... | 01/23/1996 |
| 5389804 | Resonant-tunneling heterojunction bipolar transistor device A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face... | 02/14/1995 |
| 5323021 | Semiconductor integrated circuit device having diode and bipolar transistor held in contact through oxygen-leakage film with emitter electrode A bipolar transistor and a diode are incorporated in a semiconductor integrated circuit device, and an emitter electrode is constituted by lower and upper doped polysilicon films sandwiching an oxygen-leakage film which tunnels minority carriers of the ba... | 06/21/1994 |
| 5272357 | Semiconductor device and electronic device by use of the semiconductor A semiconductor device comprises; a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region and capable of flowing therein a tunnel current;... | 12/21/1993 |
| 5206524 | Heterostructure bipolar transistor Improved heterojunction bipolar transistor (HBT) are disclosed. Inventive devices can attain high cut-off frequency (fT), exemplarily 80 GHz or higher, and high DC current gain (ଲ), exemplarily 25 or higher. The devices exhibit lateral sc... | 04/27/1993 |
| 5151618 | Resonant-tunneling heterojunction bipolar transistor device A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer; a base layer; a collector layer operatively facing the base layer to form a PN junction at the face... | 09/29/1992 |
| 5140299 | Article comprising a high value resistor In an electronic circuit that normally includes a high-value resistor, the resistive function may be usefully provided by a thin dielectric layer. Electric current is transported through the layer by quantum tunneling. In one embodiment, a resistor useful... | 08/18/1992 |
| 5031005 | Semiconductor device A semiconductor device comprises stacked first through fifth semiconductor layers. The semiconductor device has an energy level condition of |Ec3 -Ec1 |.apprxeq.|Ev3 -Ev5 |, where Ec3 is a resonant en... | 07/09/1991 |
| 5027179 | Resonant-tunneling heterojunction bipolar transistor device A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer, a base layer, a collector layer facing the base layer to form a PN junction at the interface betwee... | 06/25/1991 |
| 4999697 | Sequential-quenching resonant-tunneling transistor A plurality of decoupled quantum wells in a transistor device enables such device to operate with multiple-peak characteristics. The device is suitable for a variety of circuit applications in switching systems and in central processor logic units and mem... | 03/12/1991 |
| 4958201 | Resonant tunneling minority carrier transistor A semiconductor device has an emitter potential barrier, a collector potential barrier, a base between the emitter potential barrier and the collector potential barrier, an emitter in contact, through the emitter potential barrier, with the base, and a co... | 09/18/1990 |
| 4845541 | Tunneling emitter bipolar transistor A bipolar transistor has a barrier layer interposed between its base and its emitter. The barrier layer is formed of a different, wider band gap, semiconductor material than the base and the emitter and has the same conductivity type as the emitter. The b... | 07/04/1989 |
| 4683642 | Method for fabricating MOMS semiconductor device An MOMS tunnel emission transistor is provided by a plurality of mesa stacked horizontal layers including at least one semiconductor layer (63) having an exposed edge (68) at a generally vertical side (67) of the mesa, such as the 111 plane. A first metal... | 08/04/1987 |
| 4672413 | Barrier emitter transistor A bipolar transistor, and a corresponding method for its fabrication, in which the injection efficiency, and therefore the common emitter current gain, is greatly increased without significant increase in the emitter resistance of the transistor. An emitt... | 06/09/1987 |
| 4631560 | MOMS tunnel emission transistor An MOMS tunnel emission transistor is provided by a plurality of mesa stacked horizontal layers including at least one semiconductor layer (63) having an exposed edge (68) at a generally vertical side (67) of the mesa, such as the 111 plane. A first metal... | 12/23/1986 |
| 4380774 | High-performance bipolar microwave transistor A high-frequency transistor and method of making same wherein the parasitic apacitance between base and collector is reduced. The collector layer of GaAs is impregnated with boron ions to form an insulative region under the base contact structure thereby r... | 04/19/1983 |
| 4131902 | Novel bipolar transistor with a dual-dielectric tunnel emitter A dual-dielectric emitter bipolar transistor device is disclosed. Two dielectric layers are deposited over the base region of a base-collector junction and are used to emulate an emitter of a conventional bipolar transistor. The transistor device obtained... | 12/26/1978 |
| 4015282 | Solid state amplifier device and circuit therefor A solid state amplifier device which comprises contiguous layers of material forming emitter, base, and collector electrodes, preferably, the emitter electrode-forming layer being made of a semiconductor switch material which, when a voltage above a given... | 03/29/1977 |
