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| Number | Title | Issue Date |
| 7396731 | Method for preparing a non-self-aligned heterojunction bipolar transistor with a small emitter-to-base spacing The present invention refers to a method for preparing a non-self-aligned heterojunction bipolar transistor comprising: preparing a patterned emitter metal on an emitter epi layer of a HBT epi structure on a substrate; preparing an emitter epitaxy below the emitter ... | 07/08/2008 |
| 7388237 | Local collector implant structure for heterojunction bipolar transistors A bipolar transistor structure includes an intrinsic base layer formed over a collector layer, an emitter formed over the intrinsic base layer, and an extrinsic base layer formed over the intrinsic layer and adjacent the emitter. A ring shaped collector implant stru... | 06/17/2008 |
| 7368764 | Heterojunction bipolar transistor and method to make a heterojunction bipolar transistor A heterojunction bipolar transistor and a method of making a heterojunction bipolar transistor. The heterojunction bipolar transistor includes: a regrown emitter region; an intrinsic base region forming a junction with the regrown emitter region; and an extrinsic ba... | 05/06/2008 |
| 7358545 | Bipolar junction transistor A bipolar junction transistor is provided. A p-type well region surrounds an n-type emitter and connects with the bottom of the emitter to serve as a base. A p-type base pick-up region connects with the base and surrounds the emitter. An n-type deep well, connected ... | 04/15/2008 |
| 7285457 | Heterojunction bipolar transistor and manufacturing method thereof In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pat... | 10/23/2007 |
| 7271429 | Nitride semiconductor device In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an ... | 09/18/2007 |
| 7265394 | Spin tunnel transistor Some spin tunnel transistors with a larger current transmittance and a higher MR ratio are described. One of the spin tunnel transistor comprises a collector; an emitter; abase formed between the collector and the emitter, including a first ferromagnetic meta... | 09/04/2007 |
| 7224005 | Heterojunction bipolar transistor structure A material made by arranging layers of gallium-arsenide-antimonide (GaAsxSb1-x, 0.0≦x≦1.0) and/or indium-gallium-arsenic-nitride (InyGa1-yAszN1-z, 0.0≦y, z≦1.0) in a specific order is used to ... | 05/29/2007 |
| 7214593 | Passivation for improved bipolar yield A SiGe heterojunction bipolar transistor including at least an emitter formed on a SiGe base region wherein the sidewalls of the emitter are protected by a conformal passivation layer. The conformal passivation layer is formed on the exposed sidewalls of said emitte... | 05/08/2007 |
| 7190047 | Transistors and methods for making the same Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound se... | 03/13/2007 |
| 7067898 | Semiconductor device having a self-aligned base contact and narrow emitter A semiconductor structure having a self-aligned base contact and an emitter, where the base contact is electrically isolated from the emitter by a dielectric layer. The separation between the base contact and the emitter is determined by the thickness of the dielect... | 06/27/2006 |
| 6696710 | Heterojunction bipolar transistor (HBT) having an improved emitter-base junction A heterojunction bipolar transistor (HBT) having a base-emitter junction that exhibits the desirable properties of a GaAsSb/AlInAs interface, but which includes an intermediate layer in the emitter such that the intermediate layer contacts the GaAsSb base... | 02/24/2004 |
| 6680235 | Method for fabricating a selective eptaxial HBT emitter According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example... | 01/20/2004 |
| 6677625 | Bipolar transistor The invention provides a bipolar transistor attaining large MSG and a method of fabricating the same. The bipolar transistor of this invention includes a collector layer; abase layer deposited on the collector layer; and a semiconductor layer deposited on... | 01/13/2004 |
| 6661037 | Low emitter resistance contacts to GaAs high speed HBT A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipol... | 12/09/2003 |
| 6649482 | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor A low-power bipolar transistor is formed to have a silicon germanium base region, an intrinsic emitter region with a sub-lithographic width, and an oxide layer that is self aligned to an overlying extrinsic emitter. The silicon germanium base region incre... | 11/18/2003 |
| 6617619 | Structure for a selective epitaxial HBT emitter According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example... | 09/09/2003 |
| 6611008 | Heterojunction bipolar transistor capable of restraining the conductivity modulation of the ballast layer A heterojunction bipolar transistor has a stack comprised of a base layer, an emitter layer and a ballast layer made of AlGaAs. The emitter layer is comprised of a single layer or a multiplicity of layers, and at least one of which is comprised of a mater... | 08/26/2003 |
| 6593604 | Heterojunction bipolar transistor, manufacturing method therefor, and communication device therewith An emitter of a heterojunction bipolar transistor has a double-layer protrusion formed of a first emitter layer and a second emitter layer and protruded outside an external base region. The protrusion of 50 nm in total thickness is enough to prevent damag... | 07/15/2003 |
| 6552375 | Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer The present invention relates to a heterojunction bipolar transistor, and comprises a collector region, and a graded profile SiGe base layer overlying the collector region. The transistor further comprises a diffusion blocking layer overlying the graded p... | 04/22/2003 |
| 6451659 | Method for forming a bipolar transistor stabilized with electrical insulating elements A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact ... | 09/17/2002 |
| 6444535 | Method to reduce emitter to base capacitance and related structure According to a disclosed embodiment, a base region is grown on a transistor region. A dielectric layer is next deposited over the base region. The dielectric layer can comprise, for example, silicon dioxide, silicon nitride, or a suitable low-k dielectric... | 09/03/2002 |
| 6426266 | Manufacturing method for an inverted-structure bipolar transistor with improved high-frequency characteristics In an element intrinsic region 12 of a bipolar transistor, an emitter is formed by two emitter layers 31,32 so as to reduce the potential barrier presented to minority carriers, this resulting in a smooth flow of minority carriers that are injected into t... | 07/30/2002 |
| 6410945 | Heterojunction bipolar transistor and its manufacturing process A heterojunction bipolar transistor having a ballast resistance layer between an AlGaAs emitter layer and an emitter electrode, wherein the ballast resistance layer comprises n-Alx Ga1-X As, wherein 0 | 06/25/2002 |
| 6362065 | Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer The present invention relates to a method of forming a bipolar transistor or a heterojunction bipolar transistor. The method comprises forming a collector region associated with a semiconductor substrate, and forming a base region base region over at leas... | 03/26/2002 |
| 6271098 | Heterojunction bipolar transistor and method for producing the same A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor ଲ from decreasing. The n-GaAs carrier supply layer having a specified carrier concentration is formed b... | 08/07/2001 |
| 6147371 | Bipolar transistor and manufacturing method for same In an element intrinsic region 12 of a bipolar transistor, an emitter is formed by two emitter layers 31,32 so as to reduce the potential barrier presented to minority carriers, this resulting in a smooth flow of minority carriers that are injected into t... | 11/14/2000 |
| 6081003 | Heterojunction bipolar transistor with ballast resistor A heterojunction bipolar transistor is provided with a ballast resistor layer in an emitter layer which prevents the current amplification factor ଲ from decreasing. The n-GaAs carrier supply layer having a specified carrier concentration is formed b... | 06/27/2000 |
| 6031255 | Bipolar transistor stabilized with electrical insulating elements A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact ... | 02/29/2000 |
| 6025615 | Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Alx Ga1-x As, where x>0.4, abutting a base layer 8.... | 02/15/2000 |
| 5864152 | Semiconductor memory and method of writing, reading, and sustaining data A semiconductor memory has bit lines, word lines, ground lines, and memory cells. The bit lines intersect the word and ground lines, to form intersections where the memory cells are arranged, respectively. Each of the memory cells consists of a double-emi... | 01/26/1999 |
| 5859447 | Heterojunction bipolar transistor having heterostructure ballasting emitter An HBT device having heterostructure ballasting emitter is disclosed. The heterostructure ballasting emitter includes an n-type emitter setback layer on a base layer and a wide-gap ballasting emitter layer on the setback layer. The heterostructure ballast... | 01/12/1999 |
| 5767540 | Hetero-junction bipolar transistor having AlGaAsP emitter layer underneath a base electrode A hetero-junction bipolar transistor comprising a collector layer, a base layer and an emitter layer formed stepwise in this order wherein the emitter layer comprises a plurality of layers including an AlGaAs layer, and a passivation layer is formed at a ... | 06/16/1998 |
| 5721437 | Heterojunction-type bipolar transistor with ballast resistance layer A heterojunction type AlGaAs/GaAs bipolar transistor includes an n-GaAs collector layer, a p+ -GaAs base layer and an n-Alx Ga1-x As emitter layer formed in a stack, and an n-Aly Ga1-y As ballast resi... | 02/24/1998 |
| 5710058 | Method of making multi-terminal resonant tunneling transistor A transistor according to the invention for simultaneously providing at least two current-voltage characteristics includes a base, a collector, and an emitter. At least one of the base, collector, and emitter includes a first layer grown using molecular b... | 01/20/1998 |
| 5698862 | Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT) The invention presents a structure of heterostructure-emitter and heterostructure-base transistor. The device structure are, from bottom upward in succession, a substrate, a buffer layer, a collector layer, a base layer, a quantum well, an emitter layer, ... | 12/16/1997 |
| 5561306 | Hetero-bipolar transistor having a plurality of emitters A hetero-bipolar transistor includes a collector layer of a first conductivity type, a base layer of a second conductivity type provided on the collector layer, a first emitter structure of the first conductivity type provided on the base layer, and a sec... | 10/01/1996 |
| 5528060 | Microwave heterojunction bipolar transistors suitable for low-power, low-noise, and high-power applications Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter, a base 50 and a collector 70 is disclosed, wherein the emitter composed of one or m... | 06/18/1996 |
| 5518937 | Semiconductor device having a region doped to a level exceeding the solubility limit A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity... | 05/21/1996 |
| 5389554 | Method for fabricating microwave heterojunction bipolar transistors with emitters designed for high power applications In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Alx Ga1-x As, where x>0.4, abutting a base layer 8.... | 02/14/1995 |
