Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 7317230 | Fin FET structure A fin FET structure employs a negative word line scheme. A gate electrode of a fin FET employs an electrode doped with n+ impurity, and a channel doping for a control of threshold voltage is not executed, or the channel doping is executed by a low density, thereby r... | 01/08/2008 |
| 7265059 | Multiple fin formation A FinFET includes a plurality of semiconductor fins. Over a semiconductor layer, patterned features (e.g. of minimum photolithographic size and spacing) are formed. In one example of fin formation, a first set of sidewall spacers are formed adjacent to the sides of ... | 09/04/2007 |
| 7170118 | Field effect transistor (FET) device having corrugated structure and method for fabrication thereof Within both a field effect transistor (FET) device and a method for fabricating the field effect transistor (FET) device there is provided: (1) a semiconductor substrate; (2) a gate electrode formed over the semiconductor substrate and covering a channel region with... | 01/30/2007 |
| 7145191 | P-channel field-effect transistor with reduced junction capacitance The source/drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zo... | 12/05/2006 |
| 6696323 | Method of manufacturing semiconductor device having trench filled up with gate electrode In a semiconductor device, a p-type base region is provided in an n- -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+ -type source region extends in the ... | 02/24/2004 |
| 6639260 | Semiconductor device having a vertical semiconductor element A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+ -type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plural... | 10/28/2003 |
| 6627499 | Semiconductor device and method of manufacturing the same Formed in a part of the base region is an impurity diffusion region extending in a vertical direction and having an impurity concentration lower than that in the other portion of the base region. By the formation of the impurity diffusion region, the depl... | 09/30/2003 |
| 6621107 | Trench DMOS transistor with embedded trench schottky rectifier A merged device is that comprises a plurality of MOSFET cells and a plurality of Schottky rectifier cells, as well as a method of designing and making the same. According to an embodiment of the invention, the MOSFET cells comprise: (a) a source region of... | 09/16/2003 |
| 6621132 | Semiconductor device The super-junction semiconductor device, which facilitates increased switching speed and reduced on-resistance, includes an alternating conductivity type layer formed of n-type drift regions and p-type partition regions arranged alternately, a pair of the... | 09/16/2003 |
| 6603173 | Vertical type MOSFET A vertical power MOSFET, which can improve a surge withstand voltage and a surge withstand voltage against a surge voltage from an inductance load L. The vertical power MOSFET has a plurality of unit cells. The unit cell is formed from a MOSFET that uses ... | 08/05/2003 |
| 6541818 | Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region A field effect transistor configuration with a trench gate electrode and a method for producing the same. An additional highly doped layer is provided in the body region under the source. The layer is used for influencing the conductibility of the source ... | 04/01/2003 |
| 6521497 | Method of manufacturing a field effect transistor A method of manufacturing a trenched field effect transistor that includes a heavy body structure. The method includes forming a plurality of trenches into a semiconductor substrate having dopants of a first conductivity type, wherein the gate electrode o... | 02/18/2003 |
| 6518624 | Trench-gate power semiconductor device preventing latch-up and method for fabricating the same A trench-gate power semiconductor device and a method for fabricating the same are provided. The trench-gate power semiconductor device includes a semiconductor substrate of a first conductivity type used as a collector region, a buffer layer of a second ... | 02/11/2003 |
| 6476443 | MOSgated device with trench structure and remote contact and process for its manufacture A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with a single common layer of conductive polysilicon which extends into each trench and overlies the silicon surface wh... | 11/05/2002 |
| 6452228 | Silicon carbide semiconductor device A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×1015 cm-3. Accordingly, when a gate oxide film is formed on the surface... | 09/17/2002 |
| 6445036 | Semiconductor device having trench-structured rectangular unit cells A semiconductor device is provided which has a structure being suitable for scale-down of cells and is capable of, without an increase in channel resistance, improving a resistance property against device breakdown required when a semiconductor device bre... | 09/03/2002 |
| 6441406 | Semiconductor device In order that the threshold value of a cell separated from an emitter wire bonding portion (W1, W2) be larger than that of a cell immediately below the emitter wire bonding portion, the area of a diffusion layer (8a) of a cell separated from the wire bond... | 08/27/2002 |
| 6429481 | Field effect transistor and method of its manufacture A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d... | 08/06/2002 |
| 6400003 | High voltage MOSFET with geometrical depletion layer enhancement In a field-effect semiconductor device, for example a power MOSFET, a body portion separates a channel-accommodating region from a drain region at a surface of a semiconductor body. This body portion includes a drift region which serves for current flow o... | 06/04/2002 |
| 6354825 | Helical blade fluid compressor having an aluminum alloy rotating member A fluid compressor comprising a helical blade type compression mechanism that includes a cylinder, a roller arranged inside the cylinder and a helical blade interposed between the roller and the cylinder. The blade, the roller and the cylinder are formed ... | 03/12/2002 |
| 6337498 | Semiconductor device having directionally balanced gates and manufacturing method A semiconductor device such as an IGBT having trench gates in a form of stripes, and manufacturing method, wherein concentration of stresses in only a single direction is relieved and the generation of a leakage current and crystal defects in the IGBT is ... | 01/08/2002 |
| 6331466 | Insulated gate semiconductor device and manufacturing method thereof An insulated gate semiconductor device in which the ON voltage is decreased by providing strip like trenches (207) having gate electrodes (210) buried therein are formed in an upper main surface of a semiconductor base body (200), and an N+ emi... | 12/18/2001 |
| 6323508 | Insulated gate semiconductor device and manufacturing method thereof An insulated gate semiconductor device in which the ON voltage is decreased by providing strip like trenches (207) having gate electrodes (210) buried therein are formed in an upper main surface of a semiconductor base body (200), and an N+ emi... | 11/27/2001 |
| 6320223 | Electronic device comprising a trench gate field effect device A trench gate field effect device has a semiconductor body (2) with a trench (3) extending into a first major surface (2a) so as to define a regular array of polygonal source cells (4). Each source cell contains a source region (5a,5b) and a body region (... | 11/20/2001 |
| 6271562 | Semiconductor component which can be controlled by a field effect A power semiconductor component that can be controlled by a field effect has a multiplicity of parallel-connected individual components disposed in cells, the cells are disposed tightly packed on a relatively small space in a cell array. Parallel-connecte... | 08/07/2001 |
| 6249023 | Gated semiconductor device A gated semiconductor device comprising a substrate defining an active surface area including source regions, and a series of gates formed adjacent and insulated from the source regions. A source electrode contacts the source regions. A termination extend... | 06/19/2001 |
| 6221721 | Method of manufacturing an insulated trench gate semiconductor device It is an object to compatibly realize a decrease in an on-state voltage and an increase in a current capable of turn-off. An N layer (43) having an impurity concentration higher than that of an N- layer (42) is formed between the N- ... | 04/24/2001 |
| 6218217 | Semiconductor device having high breakdown voltage and method of manufacturing the same In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at ... | 04/17/2001 |
| 6165822 | Silicon carbide semiconductor device and method of manufacturing the same A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×1015 cm-3. Accordingly, when a gate oxide film is formed on the surface... | 12/26/2000 |
| 6137136 | Power semiconductor device An injection enhanced insulated gate bipolar transistor is disclosed in which an average roughness of silicon on the side and bottom surfaces of trench grooves below a gate oxide film is made to be 0.6 nm or smaller. Irregular portions on the surface of s... | 10/24/2000 |
| 6117734 | Method of forming a trench MOS gate on a power semiconductor device A method of fabricating a semiconductor device which includes the steps of forming a trench (4), and repeating the formation and removal of an oxide film (a sacrificial oxide film) twice to provide a rounded configuration (5b) of an opening portion of the... | 09/12/2000 |
| 6118150 | Insulated gate semiconductor device and method of manufacturing the same The RBSOA of a device is improved. A gate electrode (10) is linked to a p base layer (4) which is formed in a cell region (CR), and a p semiconductor layer (13) is formed to surround the cell region (CR). An emitter electrode (11) is connected to a top su... | 09/12/2000 |
| 6111290 | Semiconductor device having high breakdown voltage and method of manufacturing the same In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at... | 08/29/2000 |
| 6107661 | Semiconductor device and method of manufacturing same A concave channel type DMOS structure having an improved gate-to-source breakdown voltage are disclosed. By establishing a curvature at a corner portion of a lattice-like pattern in a groove portion for forming the concave channel structure, the shape of ... | 08/22/2000 |
| 6107650 | Insulated gate semiconductor device and manufacturing method thereof An insulated gate semiconductor device in which the ON voltage is decreased by providing strip like trenches (207) having gate electrodes (210) buried therein are formed in an upper main surface of a semiconductor base body (200), and an N+ em... | 08/22/2000 |
| 6072214 | IGBT with trench gate structure An IGBT includes two trenches extending from an emitter terminal toward a first side of a substrate of a first conductivity material. A collector layer of a second conductivity material is disposed on a second side of the substrate. The trenches each have... | 06/06/2000 |
| 6060731 | Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region A MOSFET wherein the formation of a channel in a channel formation region is controlled by a voltage applied to an insulated gate, comprising: a semiconductor substrate; a first semiconductor layer (drain region) of a first conductivity type formed on a s... | 05/09/2000 |
| 6060747 | Semiconductor device A semiconductor device is characterized in that source electrode contact regions, each of which is formed of a first conductivity type source layer and a second conductivity type base layer in a surface of a semiconductor surface, are formed at respective... | 05/09/2000 |
| 6040599 | Insulated trench semiconductor device with particular layer structure It is an object to compatibly realize a decrease in an on-state voltage and an increase in a current capable of turn-off. An N layer (43) having an impurity concentration higher than that of an N- layer (42) is formed between the N-... | 03/21/2000 |
| 6031265 | Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area This invention discloses a vertical DMOS power device formed in a semiconductor substrate with a top surface and a bottom surface. The power device includes a core cell area and a gate runner area. The power device includes a plurality of vertical DMOS tr... | 02/29/2000 |
