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| Number | Title | Issue Date |
| 7423316 | Semiconductor devices The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− ... | 09/09/2008 |
| 7417282 | Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the dr... | 08/26/2008 |
| 7408234 | Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate;... | 08/05/2008 |
| 7402874 | One time programmable EPROM fabrication in STI CMOS technology The formation of a one time programmable (OTP) transistor based electrically programmable read only memory (EPROM) cell (100) is disclosed. The cell (100) includes multiple concentric rings (108, 110) out of which gate structures are formed. An ... | 07/22/2008 |
| 7397084 | Semiconductor device having enhanced performance and method In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation. ... | 07/08/2008 |
| 7388255 | Semiconductor device having separation region A semiconductor device includes: a semiconductor substrate; a separation region in the substrate; an embedded layer; a channel forming region; a source region; a drain region; a first electrode for the source region; a second electrode for the channel forming region... | 06/17/2008 |
| 7372100 | Semiconductor device A semiconductor device includes: a semiconductor layer of a first conductivity type; a plurality of first cylindrical semiconductor pillar regions of the first conductivity type periodically provided on a major surface of the semiconductor layer; a plurality of seco... | 05/13/2008 |
| 7372104 | High voltage CMOS devices A transistor suitable for high-voltage applications is provided. The transistor is formed on a substrate having a deep well of a first conductivity type. A first well of the first conductivity type and a second well of a second conductivity type are formed such that... | 05/13/2008 |
| 7365402 | LDMOS transistor An LDMOS semiconductor transistor structure comprises a substrate having an epitaxial layer of a first conductivity type, a source region extending from a surface of the epitaxial layer of a second conductivity type, a lightly doped drain region within the epitaxial... | 04/29/2008 |
| 7348629 | Metal gated ultra short MOSFET devices MOSFET devices suitable for operation at gate lengths less than about 40 nm, and methods of their fabrication is being presented. The MOSFET devices include a ground plane formed of a monocrystalline Si based material. A Si based body layer is epitaxially disposed o... | 03/25/2008 |
| 7335944 | High-voltage vertical transistor with a multi-gradient drain doping profile A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being... | 02/26/2008 |
| 7319257 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 01/15/2008 |
| 7309894 | High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor There is provided a high voltage gate driver integrated circuit. The high voltage gate driver integrated circuit includes: a high voltage region; a junction termination region surrounding the high voltage region; a low voltage region surrounding the junction termina... | 12/18/2007 |
| 7276405 | Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semicondu... | 10/02/2007 |
| 7259411 | Vertical MOS transistor A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. Th... | 08/21/2007 |
| 7253484 | Low-power multiple-channel fully depleted quantum well CMOSFETs A multiple-channel semiconductor device has fully or partially depleted quantum wells and is especially useful in ultra large scale integration devices, such as CMOSFETs. Multiple channel regions are provided on a substrate with a gate electrode formed on the upperm... | 08/07/2007 |
| 7250639 | Insulated gate bipolar transistor An IGBT includes a plurality of n+ doped regions (11) selectively formed in a main surface (103) of a p+ semiconductor layer (12) opposite from an n type semiconductor layer (80) without being connected to the n type... | 07/31/2007 |
| 7211861 | Insulated gate semiconductor device An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate l... | 05/01/2007 |
| 7192814 | Method of forming a low capacitance semiconductor device and structure therefor In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator. ... | 03/20/2007 |
| 7183169 | Method and arrangement for reducing source/drain resistance with epitaxial growth A method and arrangement for reducing the series resistance of the source and drain in a MOSFET device provides for epitaxially grown regions on top of the source and drain extensions to cover portions of the top surfaces of the silicide regions formed on the substr... | 02/27/2007 |
| 6703664 | Power FET device A power FET device includes a semiconductor wafer substrate having first and second surfaces, a gate electrode extending over the first surface of the substrate but insulated therefrom, and a drain electrode extending over the second surface of the substr... | 03/09/2004 |
| 6696728 | Super-junction semiconductor device To provide a super-junction MOSFET reducing the tradeoff relation between the on-resistance and the breakdown voltage greatly and having a peripheral structure, which facilitates reducing the leakage current in the OFF-state thereof and stabilizing the br... | 02/24/2004 |
| 6696323 | Method of manufacturing semiconductor device having trench filled up with gate electrode In a semiconductor device, a p-type base region is provided in an n- -type substrate to extend from a principal surface of the substrate in a perpendicular direction to the principal surface. An n+ -type source region extends in the ... | 02/24/2004 |
| 6693340 | Lateral semiconductor device A lateral semiconductor device has a semiconductor layer on an insulating layer on a semiconductor substrate. The semiconductor layer has a region of a first conduction type and a region of a second conduction type with a drift region therebetween. The dr... | 02/17/2004 |
| 6693338 | Power semiconductor device having RESURF layer A semiconductor device includes a drain layer, first and second drift layers, a RESURF layer, a drain electrode, a base layer, a source layer, a source electrode, and a gate electrode. The first drift layer is formed on the drain layer. The second drift l... | 02/17/2004 |
| 6683348 | Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter A semiconductor device capable of lowering the ON voltage by decreasing the area of the invalid region compared to that of prior art yet maintaining the ability for suppressing the latch-up comparable to that of the conventional IGBTS. The semiconductor d... | 01/27/2004 |
| 6683344 | Rugged and fast power MOSFET and IGBT A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the... | 01/27/2004 |
| 6667515 | High breakdown voltage semiconductor device A high breakdown voltage semiconductor device includes an active area and a surrounding region. In the active area, a second semiconductor layer of a second conductivity type is formed in a first semiconductor layer of a first conductivity type. A third s... | 12/23/2003 |
| 6664595 | Power MOSFET having low on-resistance and high ruggedness A power MOSFET is provided. In this power MOSFET, a drift region is formed on a drain region having the same conductivity type as that of the drain region using a semiconductor substrate of a first conductivity type. A gate electrode is formed on the drif... | 12/16/2003 |
| 6653691 | Radio frequency (RF) power devices having faraday shield layers therein Integrated power devices include a plurality of field effect transistor unit cells and a Faraday shield layer that reduces parasitic gate-to-drain capacitance (Cgd) and concomitantly improves high frequency switching performance. These power devices may i... | 11/25/2003 |
| 6649975 | Vertical power devices having trench-based electrodes therein Vertical power devices include a semiconductor substrate having a drift region of first conductivity type therein and first and second stripe-shaped trenches that extend in the semiconductor substrate and define a drift region mesa therebetween. First and... | 11/18/2003 |
| 6650001 | Lateral semiconductor device and vertical semiconductor device A lateral semiconductor device includes an n-type buffer layer (15) selectively formed in the surface of an n-type base layer (14), a p-type drain layer (16) selectively formed in the surface of the n-type buffer layer (15), a p-type base layer (17) forme... | 11/18/2003 |
| 6639277 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 10/28/2003 |
| 6639274 | Semiconductor device A trench lateral MOSFET including a gate region where gate polysilicon is lead out to a substrate surface, and an active region where electric current is driven in a MOSFET operation, and with a trench width, in the gate region Wg, being narrower than a t... | 10/28/2003 |
| 6635926 | Field effect transistor with high withstand voltage and low resistance A field effect transistor with a high withstand voltage and a low resistance is provided. A ring-shaped channel region is disposed inside a source region formed in a ring, and the inside of the channel region is taken as a drain region. A depletion layer ... | 10/21/2003 |
| 6633065 | High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa... | 10/14/2003 |
| 6630698 | High-voltage semiconductor component The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semicond... | 10/07/2003 |
| 6624030 | Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region A vertical semiconductor rectifier device includes a semiconductor substrate of first conductivity type and having a plurality of gates insulatively formed on a first major surface and a plurality of source/drain regions of the first conductivity type for... | 09/23/2003 |
| 6600206 | High voltage semiconductor device having high breakdown voltage isolation region A high voltage semiconductor device is provided. The high voltage semiconductor device includes a tow voltage region, a high voltage region, and a high breakdown voltage isolation region. The high voltage region is surrounded by the low voltage region and... | 07/29/2003 |
| 6566690 | Single feature size MOS technology power device A MOS technology power device includes a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor material layer, and a plurality of elementary functional units. The conductive insulated gate ... | 05/20/2003 |
