Class 257/E29.015 - With insulating layer characterized by dielectric or electrostatic property (e.g., including fixed charge or semi-insulating surface layer) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.008. This
No. of patents: 79
Last issue date: 06/03/2008

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Number	Title	Issue Date
7382013	Dielectric thin film, dielectric thin film device, and method of production thereof To provide a dielectric thin with a high dielectric constant, a low leakage current, and stable physical properties and electrical properties and to provide a thin film capacitor or other thin film dielectric device with a high capacitance and high reliability and a...	06/03/2008
7378310	Method for manufacturing a memory device having a nanocrystal charge storage region A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first...	05/27/2008
7375403	Semiconductor device and method of manufacturing the same A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a ...	05/20/2008
7372114	Semiconductor device, and method of fabricating the same A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled...	05/13/2008
7061094	Multilayer printed circuit board including first and second signal traces and a first ground trace A multilayer printed circuit board (PCB) includes a substrate; a ground layer having edges which define a gap portion, the ground layer being provided on a bottom face of the substrate; and at least two signal traces and provided on a top face of the substrate so as...	06/13/2006
6605862	Trench semiconductor devices A semiconductor device, such as a MOSFET or PN diode rectifier, has a p-n junction (24) between a first device region (23) and an underlying voltage-sustaining zone (20). Trenched field-shaping regions (40) extend through the voltage-sustaining zone (20) ...	08/12/2003
6558983	Semiconductor apparatus and method for manufacturing the same A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and a silicon oxide film formed on the silicon substrate, such...	05/06/2003
6528373	Layered dielectric on silicon carbide semiconductor structures A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a layer of silicon dioxide on the silicon carbide layer, a layer of another insulating material on th...	03/04/2003
6495864	High-voltage semiconductor component, method for the production and use thereof The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconduc...	12/17/2002
6489213	Method for manufacturing semiconductor device containing a silicon-rich layer A semiconductor device having a controlled resistance value within a predetermined range. The semiconductor device includes a substrate and an oxide layer provided above the substrate. There is also included a first dielectric layer that is silicon-rich a...	12/03/2002
6475861	Semiconductor device and fabrication method thereof A semiconductor device and fabrication method thereof restrains an amplified current between input voltage Vin and ground voltage Vss, and first and second n-wells are biased into internal voltage sources, whereby the current-voltage characteristic of the...	11/05/2002
6465844	Power semiconductor device and method of manufacturing the same A power semiconductor device has a plurality of U-shaped buried layers buried in a drift layer and made of either an insulating material or a semiconductor having a wider bandgap than that of the semiconductor of the drift layer. The ratio of the product ...	10/15/2002
6452230	High voltage mosgated device with trenches to reduce on-resistance Parallel, spaced SIPOS (semi-insulating polysilicon) filled trenches extend vertically through the epi layer of a MOSgated device and act to deplete carriers from the vertical conduction volume of the epi between trenches during voltage blocking condition...	09/17/2002
6437416	Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance The breakdown voltage of a semiconductor device, such as a transistor fabricated in a device region in and abutting the surface of a semiconductor body with a field oxide surrounding the device region, is improved by etching the field oxide abutting the d...	08/20/2002
6436779	Semiconductor device having a plurality of resistive paths A semiconductor device has first and second opposed major surfaces (10a and 10b). A semiconductor first region (11) is provided between second (12 or 120) and third (14) regions such that the second region (12 or 120) forms a rectifying junction (13 or 13...	08/20/2002
6437371	Layered dielectric on silicon carbide semiconductor structures A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a layer of silicon dioxide on the silicon carbide layer, a layer of another insulating material on th...	08/20/2002
6316794	Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and a silicon oxide film formed on the silicon substrate, such...	11/13/2001
6313482	Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein Silicon carbide power devices having trench-based charge coupling regions include a silicon carbide substrate having a silicon carbide drift region of first conductivity type (e.g., N-type) and a trench therein at a first face thereof. A uniformly doped s...	11/06/2001
6307232	Semiconductor device having lateral high breakdown voltage element A diode having a p+ semiconductor region, an n- drift region and an n+ semiconductor region is formed in an SOI layer. An SiC layer is formed in the bottom surface of a semiconductor layer. Further, a capacitive coupled mu...	10/23/2001
6303954	Semiconductor device with a high-voltage component in semiconductor on insulator A semiconductor device comprises a semiconductor layer on an insulator film that is contiguous to a semiconductor substrate. A component, such as a high-voltage diode, forming region is provided in the semiconductor layer and electrically insulated from o...	10/16/2001
6297532	Semiconductor device and method of manufacturing the same The present invention aims to provide a semiconductor device in which a satisfactory breakdown voltage can be obtained without increasing its chip size, and a method of manufacturing the same. A first electrode layer and a second electrode layer are forme...	10/02/2001
6246076	Layered dielectric on silicon carbide semiconductor structures A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a layer of silicon dioxide on the silicon carbide layer, a layer of another insulating material on th...	06/12/2001
6222231	Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method Continuously after forming a semiconductive film, a conducting film is formed on the semiconductive film. This conducting film serves as a block film for blocking diffusion of oxygen when a heated wafer is transferred from a furnace to the atmosphere. As ...	04/24/2001
6201279	Semiconductor component having a small forward voltage and high blocking ability The semiconductor component has a small forward voltage and a high blocking ability. At least one drift path suitable for taking up voltage is formed in a semiconductor body between two electrodes that are arranged at a distance from one another. At least...	03/13/2001
6198126	Semiconductor device and power converter using same A high voltage semiconductor device is provided with a p layer which forms a main pn-junction, a plurality of p layers which surround the p layer in a ring form, a ring-like n+ layer which further surrounds those p layers, forward field plates extending i...	03/06/2001
6150701	Insulative guard ring for a semiconductor device A semiconductor device and fabrication method thereof restrains an amplified current between input voltage Vin and ground voltage Vss, and first and second n-wells are biased into internal voltage sources, whereby the current-voltage characteristic of the...	11/21/2000
5981349	Method of forming semiconducting planar junction termination with high breakdown voltage and low parasitic capacitance The breakdown voltage of a semiconductor device, such as a transistor fabricated in a device region in and abutting the surface of a semiconductor body with a field oxide surrounding the device region, is improved by etching the field oxide abutting the d...	11/09/1999
5861657	Graded concentration epitaxial substrate for semiconductor device having resurf diffusion The epitaxial substrate of a semiconductor chip device has a resurf diffusion in at least one of its isolated wells in the device chip surface. The wells are separated by junction diffusions. The thickness of the epitaxial layer is reduced by placing an i...	01/19/1999
5859458	Semiconductor device containing a silicon-rich layer A semiconductor device having a controlled resistance value within a predetermined range. The semiconductor device includes a substrate and an oxide layer provided above the substrate. There is also included a first dielectric layer that is silicon-rich a...	01/12/1999
5801431	MOS gated semiconductor device with source metal covering the active gate An MOS gated semiconductor device includes a metal source contact electrode which extends across the top of a overlaying oxide layer that is formed atop the gate electrode. The source metal thus extends over the channel region to provide a physical metal ...	09/01/1998
5793110	MOS transistor with good hot carrier resistance and low interface state density After a MOS transistor having a gate electrode layer is formed on the surface of a semiconductor substrate, a first interlayer insulating film and a moisture blocking film are sequentially formed. After necessary contact holes are formed in the films, a f...	08/11/1998
5777373	Semiconductor structure with field-limiting rings and method for making An improved edge termination scheme for semiconductor structures includes field-limiting rings (13, 14 and 15) having a fine-to-coarse incrementing scheme (18, 19 and 20) which is spatially additive assuring constancy against lateral junction variation. T...	07/07/1998
5763915	DMOS transistors having trenched gate oxide Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve cost savings by simplified device structure and fabrication processes, and also by reducing the required die size. Specifically, in a novel MOSFET device, ...	06/09/1998
5731628	Semiconductor device having element with high breakdown voltage A semiconductor device which contains an electrode or an interconnection subjected to a high voltage prevents current leakage due to polarization of a mold resin. In this semiconductor device, a glass coat film 13a covering a semiconductor element has an ...	03/24/1998
5691553	Semiconductor device and power converter using same A high voltage semiconductor device is provided with a p layer which forms a main pn- junction, a plurality of p layers which surround the p layer in a ring form, a ring-like n+ layer which further surrounds those p layers, forward field plates extending ...	11/25/1997
5665634	Method of increasing maximum terminal voltage of a semiconductor device In a semiconductor island structure with passive side isolation, a method and structure for reducing corner breakdown where a device conductor crosses the edge of the island. The decrease in the field strength at the island edge between the conductor and ...	09/09/1997
5640040	High breakdown voltage semiconductor device A high breakdown voltage semiconductor device comprising a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivi...	06/17/1997
5592014	High breakdown voltage semiconductor device A high breakdown voltage semiconductor apparatus comprises a substrate having an insulating layer formed thereon, a high resistance semiconductor layer of a first conductivity type formed on said insulating layer, a base region of the first conductivity t...	01/07/1997
5561319	Integrated circuit structure including CMOS devices protected by patterned nitride passivation and method for the fabrication thereof A CMOS integrated circuit structure is disclosed having a patterned nitride passivation layer, wherein the nitride is patterned such that it does not overlie the thin gate oxide portions of one or more of the MOS devices. When protection against the effec...	10/01/1996
5552625	Semiconductor device having a semi-insulating layer A semiconductor device has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type contacted by respective first and second electrodes. A semi-insulating layer extends between the first and...	09/03/1996

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Class 257/E29.015 - With insulating layer characterized by dielectric or electrostatic property (e.g., including fixed charge or semi-insulating surface layer) (EPO)