Class 257/E29.013 - With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with PN or Schottky junction) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E29.012. This
No. of patents: 242
Last issue date: 08/12/2008

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Number	Title	Issue Date
7411257	Semiconductor device having guard ring and manufacturing method thereof An interlayer insulation film is etched to form contact holes in an integrated circuit part. At this time, a trench is not formed in a guard ring part. Subsequently, ion implantation is carried out in source/drain regions in a peripheral circuit part for contact com...	08/12/2008
7405449	Semiconductor device and method of manufacturing the same A semiconductor device includes a semiconductor substrate, and a MOS transistor provided on the semiconductor substrate and having a channel type of a first conductivity, the MOS transistor comprising a semiconductor region of the first conductivity type including f...	07/29/2008
7405445	Semiconductor structure and method for ESD protection A semiconductor integrated circuit structure includes a plurality of diodes disposed in the substrate. These diodes are electrically coupled in series. At least one insertion region is disposed in the substrate between two of the diodes and a supply voltage node ele...	07/29/2008
7384826	Method of forming ohmic contact to a semiconductor body A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance...	06/10/2008
7378310	Method for manufacturing a memory device having a nanocrystal charge storage region A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first...	05/27/2008
7335949	Semiconductor device and method of fabricating the same A semiconductor device 100 includes an element-forming region having gate electrode 108 formed therein, and a circumferential region formed in the outer circumference of the element-forming region and having an element-isolating region 118 forme...	02/26/2008
7307330	Reverse blocking semiconductor device and a method for manufacturing the same A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, w...	12/11/2007
7288799	Semiconductor device and fabrication method thereof A semiconductor device includes a semiconductor substrate, a circuit part formed on and above the semiconductor substrate, a passivation film covering the circuit part, an electrode pad provided outside the circuit part in such a manner that the electrode pad is exp...	10/30/2007
7274077	Trench transistor A trench transistor has a cell array, in which at least one cell array trench (2) is provided, and an edge structure framing the cell array. An edge trench (15) spaced apart from the cell array trenches (2) is provided in the edge structure....	09/25/2007
7230297	Trench-gated MOSFET including schottky diode therein Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer forme...	06/12/2007
7145211	Seal ring for mixed circuitry semiconductor devices In mixed-component, mixed-signal, semiconductor devices, selective seal ring isolation from the substrate and its electrical potential is provided in order to segregate noise sensitive circuitry from electrical noise generated by electrically noisy circuitry. Approp...	12/05/2006
7132720	Semiconductor device having guard ring and manufacturing method thereof An interlayer insulation film is etched to form contact holes in an integrated circuit part. At this time, a trench is not formed in a guard ring part. Subsequently, ion implantation is carried out in source/drain regions in a peripheral circuit part for contact com...	11/07/2006
7126151	Interconnected high speed electron tunneling devices An integrated circuit chip includes a formation of integrated layers configured to define at least one integrated electronic component. The integrated layers further define an integrated electron tunneling device, which includes first and second non-insulating layer...	10/24/2006
6703684	Semiconductor device and method of forming a semiconductor device A power semiconductor device (10) has an active region that includes a drift region (20). At least a portion of the drift region (20) is provided in a membrane (16) which has opposed top and bottom surfaces (15,17). In one embodiment, the top surface (15)...	03/09/2004
6703292	Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Semiconductor devices are known comprising a multiple p-n junction RESURF semiconductor material (10) that provides a voltage-sustaining space-charge zone when depleted from a blocking junction (40). Charge balance is important in the alternating p-type (...	03/09/2004
6700157	Semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an...	03/02/2004
6699775	Manufacturing process for fast recovery diode A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two spaced silicon dioxide rings used in the definition of the two ...	03/02/2004
6693338	Power semiconductor device having RESURF layer A semiconductor device includes a drain layer, first and second drift layers, a RESURF layer, a drain electrode, a base layer, a source layer, a source electrode, and a gate electrode. The first drift layer is formed on the drain layer. The second drift l...	02/17/2004
6693323	Super-junction semiconductor device A method of manufacture reduces costs and provides an excellent mass-productivity, a super-junction semiconductor device, that facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteris...	02/17/2004
6693308	Power SiC devices having raised guard rings Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of g...	02/17/2004
6683347	Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on- resistance while maintaining a high breakdow...	01/27/2004
6677626	Semiconductor device with alternating conductivity type layer and method of manufacturing the same This invention achieves a high inverse voltage of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. An n- high resistance r...	01/13/2004
6677210	High voltage transistors with graded extension High voltage transistors with high breakdown voltages are provided. These high voltage transistors are formed with graded drain extension regions. The concentration of charge carriers increases farther away from the gate across each drain extension region...	01/13/2004
6673681	Process for forming MOS-gated power device having segmented trench and extended doping zone A process for constructing a trench MOS-gated device includes: forming in a semiconductor substrate an extended trench that comprises an upper segment and a bottom segment, wherein the bottom segment has a lesser width relative to a greater width of the t...	01/06/2004
6670685	Method of manufacturing and structure of semiconductor device with floating ring structure A high voltage semiconductor device includes a drain region disposed within a semiconductor substrate. The semiconductor device further includes a field oxide layer disposed outwardly from the drain region of the semiconductor substrate. The semiconductor...	12/30/2003
6670688	Semiconductor device including at least one schottky metal layer surrounding PN junction A semiconductor device which can prevent an operation thereof from being uncontrollable to obtain a high reliability, and can be manufactured easily and can reduce a manufacturing cost. A p-type impurity layer containing a p-type impurity in a relatively ...	12/30/2003
6667515	High breakdown voltage semiconductor device A high breakdown voltage semiconductor device includes an active area and a surrounding region. In the active area, a second semiconductor layer of a second conductivity type is formed in a first semiconductor layer of a first conductivity type. A third s...	12/23/2003
6657273	Termination for high voltage schottky diode A composite field ring for a Schottky diode has a low concentration deep portion to increase breakdown voltage withstand and a high concentration, shallow region to enable minority carrier injection during high forward current conduction. The composite ri...	12/02/2003
6649459	Method for manufacturing a semiconductor component The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types exten...	11/18/2003
6649539	Semiconductor contact fabrication method A method for reducing damage to a semiconductor structure resulting from migration of constituents of a first component part (3) of the structure into a subsequently deposited second component part (8) of the structure which makes contact with a surface o...	11/18/2003
6646304	Universal semiconductor wafer for high-voltage semiconductor components A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones o...	11/11/2003
6642558	Method and apparatus of terminating a high voltage solid state device Termination of a high voltage device is achieved by a plurality of discrete deposits of charge that are deposited in varying volumes and/or spacing laterally along a termination region. The manner in which the volumes and/or spacing varies also varies bet...	11/04/2003
6639277	High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa...	10/28/2003
6635906	Voltage sustaining layer with opposite-doped islands for semi-conductor power devices A semiconductor high-voltage device comprising a voltage sustaining layer between a n+ -region and a p+ -region is provided, which is a uniformly doped n(or p)-layer containing a plurality of floating p(or n)-islands. The effect of t...	10/21/2003
6633065	High-voltage transistor with multi-layer conduction region A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sa...	10/14/2003
6630698	High-voltage semiconductor component The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semicond...	10/07/2003
6627948	Vertical layer type semiconductor device A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions an...	09/30/2003
6624494	Method for fabricating a power semiconductor device having a floating island voltage sustaining layer A power semiconductor device and a method of forming the same is provided. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by de...	09/23/2003
6620669	Manufacture of trench-gate semiconductor devices A vertical power transistor trench-gate semiconductor device has an active area (100) accommodating transistor cells and an inactive area (200) accommodating a gate electrode (25) (FIG. 6). While an n-type layer (14) suitable for drain regions still exten...	09/16/2003
6617647	Insulated gate semiconductor device and method of manufacturing the same Dot-pattern-like impurity regions 104 are artificially and locally formed on a channel forming region 103. The impurity regions 104 restrain the expansion of a drain side depletion layer toward the channel forming region 103 to prevent the short channel e...	09/09/2003

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Class 257/E29.013 - With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with PN or Schottky junction) (EPO)