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| Number | Title | Issue Date |
| 7388239 | Frame shutter pixel with an isolated storage node A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion. ... | 06/17/2008 |
| 6693671 | Fast-dump structure for full-frame image sensors with lod antiblooming structures A structure for a fast-dump gate for charge coupled devices that does not require a separate contact to a drain region instead using the existing drain of a lateral overflow drain (LOD) typically used for antiblooming purposes. LOD structures are typicall... | 02/17/2004 |
| 6680222 | Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making Generally, and in one form of the invention, a monolithic solid state image-sensing device is disclosed. The device utilizes only a single layer of polysilicon deposition in its fabrication process that is split into two or more phases by very narrow gaps... | 01/20/2004 |
| 6665013 | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of t... | 12/16/2003 |
| 6649442 | Fast line dump structure for solid state image sensor The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a ... | 11/18/2003 |
| 6624453 | Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage An image sensor having an anti-blooming structure, where the image sensor comprises a substrate of a first conductivity type; a dielectric having a first thin portion and a second thick portion; a buried channel of the second conductivity type within the ... | 09/23/2003 |
| 6583061 | Method for creating an anti-blooming structure in a charge coupled device A method of creating a lateral overflow drain, anti-blooming structure in a charge coupled device, the method includes steps for self-aligning a peripheral edge of the lateral overflow drain to an edge of the thick field oxide, whereby the overflow drain ... | 06/24/2003 |
| 6507056 | Fast line dump structure for solid state image sensor The present invention is a structure for a fast-dump gate (FDG) and a fast-dump drain (FDD) for a charge coupled device. It is envisioned that the charge coupled device be a horizontal readout register of a solid-state image sensor. This structure uses a ... | 01/14/2003 |
| 6331873 | High-precision blooming control structure formation for an image sensor Provided is a blooming control structure for an imager and a corresponding fabrication method. The structure is produced in a semiconductor substrate in which is configured an electrical charge collection region. The electrical charge collection region is... | 12/18/2001 |
| 6243135 | Solid state imaging device having overflow drain region A solid state imaging device of the present invention includes a photoelectric convert part, a vertical charge transfer part, a horizontal charge transfer part, an unnecessary charge expelling region. A channel region of the horizontal charge transfer par... | 06/05/2001 |
| 6188092 | Solid imaging device having an antifuse element and method of making the same A solid imaging device including a substrate voltage generating device possessing high display quality, high reliability, and method of manufacturing. The solid imaging device includes a plurality of photoelectric conversion elements, a vertical charge tr... | 02/13/2001 |
| 6180935 | Dynamic range extension of CCD imagers Dynamic range extension (DRE) is achieved in CCD imagers with charge overflow structures by varying the potential VG on the gate electrodes of the pixel signal charge wells during charge integration. The wells are formed to function with the ch... | 01/30/2001 |
| 6140147 | Method for driving solid-state imaging device A method for driving a solid-state imaging device such as a CCD (Charge Coupled Device) which facilitates control of a blooming suppressing voltage and can reduce a voltage required for shuttering. The solid-state imaging device to be driven typically com... | 10/31/2000 |
| 6051852 | Self aligned LOD antiblooming structure for solid-state imagers A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by p... | 04/18/2000 |
| 6025210 | Solid-state imaging device and method of manufacturing the same A solid-state imaging device provided here comprises a p-type semiconductor substrate, a p-type impurity layer formed thereon, a light-intercepting part formed inside said impurity layer for storing signal charges produced through incident light, and a n-... | 02/15/2000 |
| 5990953 | Solid state imaging device having overflow drain region provided in parallel to CCD shift register A solid state imaging device of the present invention includes a photoelectric convert part, a vertical charge transfer part, a horizontal charge transfer part, an unnecessary charge expelling region. A channel region of the horizontal charge transfer par... | 11/23/1999 |
| 5972733 | Self-aligned barrier process with antiblooming drain for advanced virtual phase charged coupled devices A method for making a virtual phase charge coupled device includes: forming a semiconductor region 24; forming a gate insulator layer 26 over the semiconductor region 24; forming a semiconductor layer over the gate insulator layer 26; forming first, secon... | 10/26/1999 |
| 5929470 | Solid state imager with reduced smear A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed ... | 07/27/1999 |
| 5902995 | CCD image sensor with overflow barrier for discharging excess electrons at high speed A charge transfer device comprises an array of photodiodes, vertical registers having channels for receiving charge packets from the photodiodes and vertical electrodes for shifting the charge packets along the channels of the vertical registers. A horizo... | 05/11/1999 |
| 5898195 | Solid-state imaging device of a vertical overflow drain system A solid-state imaging device of a vertical overflow drain system according to the present invention includes a first conductive type semiconductor substrate, a second conductive type semiconductor well region formed on the first conductive type semiconduc... | 04/27/1999 |
| 5877520 | Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the trench 92; a gate 20 in the trench 92 overlying and separa... | 03/02/1999 |
| 5869854 | Solid-state imaging device and method of manufacturing the same A solid-state imaging device provided here comprises a p-type semiconductor substrate, a p-type impurity layer formed thereon, a light-intercepting part formed inside said impurity layer for storing signal charges produced through incident light, and a n-... | 02/09/1999 |
| 5867055 | Semiconductor device containing an adjustable voltage generator A semiconductor device and a method of inspecting the same are described. The semiconductor device does not need voltage adjustment of an external driver circuit, since it contains a voltage generator to inspect and memorize the best value of voltage by c... | 02/02/1999 |
| 5844264 | Charge-coupled device image sensor A charge-coupled device image sensor includes a substrate, a buried channel region of a first conductivity type, formed in the substrate to a predetermined depth, for transferring signal charges, a first high concentration impurity region of a second cond... | 12/01/1998 |
| 5841126 | CMOS active pixel sensor type imaging system on a chip Single substrate device is formed to have an image acquistition device and a controller. The controller on the substrate controls the system operation.... | 11/24/1998 |
| 5804844 | Solid-state imager with container LOD implant A CCD pixel 10 has an antiblooming structure including a lateral overflow drain 36 of one conductivity. The drain 36 is mounted on one side by a heavy dope channel stop region. The rest of drain 36 is bounded by a heavily doped container region 38 that is... | 09/08/1998 |
| 5804465 | Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumulation mode By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-typ... | 09/08/1998 |
| 5763292 | Method of making a solid state imager with reduced smear A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed ... | 06/09/1998 |
| 5714776 | Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumlation mode By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-typ... | 02/03/1998 |
| 5702971 | Self-aligned LOD antiblooming structure for solid-state imagers A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by p... | 12/30/1997 |
| 5699114 | CCD apparatus for preventing a smear phenomenon A CCD for detecting images includes a substrate, a well region formed on the semiconductor substrate, a horizontal CCD (HCCD) formed in the well region, a photodiode region formed in the well region at a prescribed spacing from the HCCD, a channel stop la... | 12/16/1997 |
| 5619049 | CCD-type solid state image pickup with overflow drain structure A charge-coupled device type solid state image pickup in which the overflow drain is formed at a high concentration on each photo-sensitive well. A high-concentration impurity layer is formed in the top layer of a PNPN structure to act as a drain against ... | 04/08/1997 |
| 5608243 | Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range The size of an active pixel sensor cell is reduced by utilizing a single split-gate MOS transistor and a reset gate. The split-gate transistor includes an image collection region which is formed in the drain region and electrically connected to the floati... | 03/04/1997 |
| 5585298 | Self aligned antiblooming structure for solid state image sensors A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by p... | 12/17/1996 |
| 5585653 | Solid-state photoelectric imaging device with reduced smearing A solid-state imaging device which restrains the smear phenomenon effectively without reduction of the dielectric breakdown strength between the transfer electrode and the light shielding film. A first insulating film covers photoelectrical converting reg... | 12/17/1996 |
| 5483282 | Method for driving a linear image sensor In a linear sensor, a charge transfer part is disposed between a one-dimensional array of photodetectors and an overflow drain and includes a CCD having four or more transfer gates for each photodetector for transferring signal charges from the photodetec... | 01/09/1996 |
| 5464996 | Process tracking bias generator for advanced lateral overflow antiblooming drain The process tracking bias generator for antiblooming structures includes a lateral overflow antiblooming drain and bias circuitry coupled to the antiblooming drain for automatically adjusting a bias for the antiblooming drain independent of process variat... | 11/07/1995 |
| 5455443 | CCD imager with overflow drain A CCD solid state imaging device has an overflow mechanism to discharge excess electric charges at the sensor section. An overflow level can be stabilized without adjustment. The CCD solid state imaging device includes an overflow barrier region for deter... | 10/03/1995 |
| 5453632 | Advanced lateral overflow drain antiblooming structure for virtual gate photosites The lateral overflow drain for virtual phase devices includes: a semiconductor region 72 of a first conductivity type; a drain region 24 of the first conductivity type formed in the semiconductor region 72; a threshold adjust region 22 formed in the semic... | 09/26/1995 |
| 5446297 | CCD type solid-state image sensor A CCD type solid-state image sensor a n type silicon substrate, a first p type well formed over the substrate, photodiode regions deeply and widely formed in the first well, second p type wells formed in the first well, each of the second well being overl... | 08/29/1995 |
