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| Number | Title | Issue Date |
| 7291861 | Solid-state imaging device, method for driving the same, method for manufacturing the same, camera, and method for driving the same A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelec... | 11/06/2007 |
| 6677177 | Solid state image sensor and method for manufacturing the same A solid state image sensor that prevents a reduction of transfer efficiency even if pixel size is reduced. A first semiconductor region is formed on a semiconductor substrate and a second semiconductor region is formed on the first semiconductor region. A... | 01/13/2004 |
| 6646247 | Photosensitive apparatus in which an initial charge on a photodiode is sampled and the retransferred to the photodiode In a photosensitive device wherein a photodiode is operated by placing an initial fat zero charge thereon before the integration of a light-induced signal, the actual dark level signal created by the fat zero charge is sampled with each readout from the p... | 11/11/2003 |
| 6639202 | Multi-resolution charge-coupled device (CCD) sensing apparatus A multi-resolution charge-coupled device (CCD) sensing apparatus is provided. The multi-resolution CCD sensing apparatus includes a photo sensor set, a shift gate, and several CCD shift registers. The shift gate includes several switches for receiving the... | 10/28/2003 |
| 6633058 | Variable reticulation time delay and integrate sensor A TDI sensor includes a column of pixels ordered from an initial pixel to a final pixel where each pixel includes reticulated clock conductors arranged to define a reticulation area and a pixel charge handling capacity. The reticulation area of a pixel in... | 10/14/2003 |
| 6570617 | CMOS active pixel sensor type imaging system on a chip A single chip camera which includes an intergrated image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the intergrated structure reduces the noise that is picked up during imaging.... | 05/27/2003 |
| 6558985 | Charge coupled device and method of fabricating the same A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first trans... | 05/06/2003 |
| 6555842 | Active pixel sensor with intra-pixel charge transfer An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of t... | 04/29/2003 |
| 6549235 | Single substrate camera device with CMOS image sensor Single substrate device is formed to have an image acquisition device and a controller. The controller on the substrate controls the system operation.... | 04/15/2003 |
| 6541805 | Solid-state image pickup device In the production of an IT-CCD including many photoelectric converters in columns and rows, vertical transfer CCDs for transferring signal charge accumulated in the photoelectric converters to a horizontal transfer CCD, and readout gate regions to control... | 04/01/2003 |
| 6522358 | Charge transfer device and method of driving the charge transfer device A charge transfer device and a method of driving the charge transfer device are arranged to enable electric charge to be correctly transferred in a short time after starting. An initialization voltage is applied at the time of starting and a portion havin... | 02/18/2003 |
| 6486503 | Active pixel sensor array with electronic shuttering An active pixel cell includes electronic shuttering capability. The cell can be "shuttered" to prevent additional charge accumulation. One mode transfers the current charge to a storage node that is blocked against accumulation of optical radiation. The c... | 11/26/2002 |
| 6472653 | Method and apparatus to extend dynamic range of time delay and integrate charge coupled devices A novel method and apparatus is disclosed that is able to extend the intra-scene dynamic range of Time Delay and Integrate Charge-Coupled Device imagers. In accordance with the principles of the invention, the charge collected and accumulated over a plura... | 10/29/2002 |
| 6456326 | Single chip camera device having double sampling operation A single chip camera device is formed on a single substrate including an image acquisition portion for control portion and the timing circuit formed on the substrate. The timing circuit also controls the photoreceptors in a double sampling mode in which a... | 09/24/2002 |
| 6444968 | CCD imager with separate charge multiplication elements In a CCD imager, a charge is accumulated in pixels of an image area representative of the intensity of incident radiation and is subsequently transferred to a store section and then on a row by row basis to an output register by applying suitable drive pu... | 09/03/2002 |
| 6392260 | Architecture for a tapped CCD array A charge coupled device includes first and second pluralities of column registers and first and second register segments. The first plurality of column registers are splayed with respect to and on one side of a column direction line, and the second plural... | 05/21/2002 |
| 6384436 | Photoelectric transducer and solid-state image sensing device using the same Disclosed is a photoelectric transducer having a photodiode that is formed on a second-conductivity-type well and is composed of a first-conductivity-type region to accumulate signal charge when light is supplied and a first second-conductivity-type regio... | 05/07/2002 |
| 6383834 | Charge coupled device The charge coupled device (CCD) formed according the method of the present invention includes a substrate, at least two photodiodes formed in the substrate and a first insulating layer formed on the substrate. A first transfer gate is formed on a portion ... | 05/07/2002 |
| 6358768 | Method for fabricating a solid-state image sensor having an HCCD and VCCDs A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the ... | 03/19/2002 |
| 6312970 | Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs... | 11/06/2001 |
| 6278142 | Semiconductor image intensifier A charge carrier multiplier is disclosed in which a carrier that passes through a high-field region lying entirely within the depleted semiconductor volume causes a single-step impact ionization without avalanching. By spacing the high-field region suffic... | 08/21/2001 |
| 6194749 | CCD type solid state image pickup device having double-structured charge transfer electrodes In a CCD type solid state image pickup device including a semiconductor substrate having photo/electro conversion portions and a first insulating layer formed on the semiconductor substrate, a plurality of charge transfer electrodes are formed on the firs... | 02/27/2001 |
| 6191817 | Charge transfer device and method of driving the charge transfer device A charge transfer device and a method of driving the charge transfer device are arranged to enable electric charge to be correctly transferred in a short time after starting. An initialization voltage is applied at the time of starting and a portion havin... | 02/20/2001 |
| 6187608 | Solid state image sensor and method for fabricating the same A solid state image sensor includes a semiconductor substrate and a plurality of transfer lines over the substrate and receiving clock signals, at least one of the plurality of transfer lines having a transparent conductive material. A plurality of transf... | 02/13/2001 |
| 6156587 | Method of attaching solid state imaging device First, a CCD package is attached to a plane of a flexible substrate. A reference plane, which is parallel to an image forming plane of a solid state imaging device chip, is formed at the top of the CCD package. The reference plane is brought into contact ... | 12/05/2000 |
| 6141049 | Image generating device having adjustable sensitivity A solid-state imaging apparatus in which the dynamic range can be increased and its magnification factor can be made variable without lowering the sensitivity. A plurality of photosensors are formed on the obverse surface of a semiconductor substrate. A v... | 10/31/2000 |
| 6136629 | Methods for forming a charge coupled devices including buried transmission gates A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a char... | 10/24/2000 |
| 6133595 | Solid state imaging device with improved ground adhesion layer The solid state imaging device of the present invention comprises a light-shielding layer 13 provided with an opening in a photodiode portion and formed through a ground adhesion layer made of one of titanium nitride and titanium on the substrate 1.... | 10/17/2000 |
| 6127668 | Solid state image pickup device and method for manufacturing the same A solid state image pickup device including implanting impurity ions into a planarizing layer and/or a microlens layer thereon for changing a refractive index thereof, and method for fabricating such a device. The planarizing layer and the microlens layer... | 10/03/2000 |
| 6101232 | Active pixel sensor with intra-pixel charge transfer An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of t... | 08/08/2000 |
| 6100553 | Solid-state image sensor and a method for fabricating the same A solid-state image sensor and a fabricating method thereof in which poly gates in a horizontal charge coupled device (hereinafter referred to as HCCD) are made to have different lengths to omit a barrier ion implanting process step, thus simplifying the ... | 08/08/2000 |
| 6091092 | Driving-gate charge-coupled device The invention relates to a charge-coupled device. Such devices comprise at least one insulated conducting gate (3) connecting two semiconductor zones. According to the invention, each insulated conducting gate (3) has a width progressively increasing from... | 07/18/2000 |
| 6091091 | Charge-coupled image device A CCD image device in which the potential variation of a charge transferring region caused by a CST layer is minimized to enhance the charge transfer efficiency, is disclosed including a plurality of photo-detectors arranged regularly in row and column di... | 07/18/2000 |
| 6090640 | Method of making CCD-type solid-state pickup device A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of ... | 07/18/2000 |
| 6087647 | Solid state imaging device and driving method therefor The invention provides a solid state imaging device having horizontal charge transfer elements at the opposite ends of vertical charge transfer elements by which the potential of a first element separation region is stabilized to suppress reduction of the... | 07/11/2000 |
| 6040810 | Display device having display and imaging pixels sandwiched between same substrates In a picture telephone, an apparatus is provided which images the face of an operator in a natural manner for a conversation, with an eye height at which the operator looks at an image expressing a partner of the conversation. A number of photodiodes are ... | 03/21/2000 |
| 6002146 | Solid-State image sensing device, method for driving thereof and camera employing the same A CCD area sensor comprising two horizontal transfer registers and a charge discharging section comprising a sweep-out electrode adjacent to the side of a horizontal register opposite to an image section and drain section, wherein the horizontal transfer ... | 12/14/1999 |
| 5962882 | Charge coupled devices including buried transmission gates A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a char... | 10/05/1999 |
| 5956570 | Method of manufacturing semiconductor substrate and method of manufacturing solid state imaging device A method of manufacturing a semiconductor substrate includes according to the present invention a step of growing, when an epitaxial semiconductor substrate used for a solid-state imaging device is manufactured, an epitaxial layer on a substrate by using ... | 09/21/1999 |
| 5940685 | Fabrication of UV-sensitive back illuminated CCD image sensors The wafer thickness of a CCD front illuminated silicon wafer is reduced to about ten to twenty microns, the Al substrate is removed and a 5-35 nanometer silicon oxide layer is produced on the thinned back of the silicon wafer followed by implanting boron ... | 08/17/1999 |
