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A method of swing on a swing is disclosed, in which a user positioned on a standard swing suspended by two chains from a substantially horizontal tree branch induces side to side motion by pulling alternately on one chain and then the other.
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| Number | Title | Issue Date |
| 7442970 | Active photosensitive structure with buried depletion layer An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. Du... | 10/28/2008 |
| 7439563 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 10/21/2008 |
| 7385231 | Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface electrostatic charge opposite to the electrostatic charge of the substrate ... | 06/10/2008 |
| 7268394 | JFET structure for integrated circuit and fabrication method Junction field effect transistors (JFETs) can be fabricated with an epitaxial layer that forms a sufficiently thick channel region to enable the JFET for use in high voltage applications (e.g., having a breakdown voltage greater than about 20V). Additionally or alte... | 09/11/2007 |
| 7227203 | Power system inhibit method and device and structure therefor A power control system (25) uses two separate currents to control a startup operation of the power control system (25). The two currents are shunted to ground to inhibit operation of the power control system (25) and one of the two currents is d... | 06/05/2007 |
| 7221010 | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on... | 05/22/2007 |
| 6046466 | Solid-state imaging device A photoelectric conversion device suitable for use as an element of a photodetector array includes a photodiode for generating a first signal charge in response to incident light, an output unit including a JFET, and at least one transistor having an elec... | 04/04/2000 |
| 5486711 | Solid-state image sensor with overlapping split gate electrodes An amplification-type solid-state image sensor includes a plurality of picture elements each thereof including a phototransistor. The phototransistor includes a plurality of split gate electrodes to which is applied a voltage for inducing carriers of the ... | 01/23/1996 |
| 5290722 | Method of making floating gate junction field effect transistor image sensor elements A floating gate junction field-effect transistor image sensor element (10) is formed in a semiconductor layer (14). A drain region (20) of a first conductivity type of the elements (14) is formed adjacent a gate region (26). A potential barrier (98) is fo... | 03/01/1994 |
| 5142346 | Floating gate JFET image sensor A floating gate junction filed-effect transistor image sensor element (10) is formed in a semiconductor layer (14). a drain region (20) of a first conductivity type of the elements (14) is formed adjacent a gate region (26). A potential barrier (98) is fo... | 08/25/1992 |
| 5065206 | Photoelectric converting device with accumulating gate region A semiconductor device comprises a semiconductive substrate of a low impurity concentration, a channel area of a low impurity concentration formed on the substrate, a source area formed on the channel area and having a high impurity concentration of a con... | 11/12/1991 |
| 5019876 | Semiconductor photo-electric converter A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are s... | 05/28/1991 |
| 4952996 | Static induction and punching-through photosensitive transistor devices A semiconductor device comprises a semiconductor substrate of a low impurity concentration, a channel region formed on the substrate and having a low impurity concentration, a source region formed on the channel region and having a high impurity concentra... | 08/28/1990 |
| 4945392 | Static induction transistor and manufacturing method of the same A static induction transistor has in a surface region of a first type of high-resistance semiconductor, a source region formed by a first type of diffusion layer and a gate region which surrounds the source region from at least two directions and which is... | 07/31/1990 |
| 4939579 | Solid-state image pick-up device including static induction transistors with photometric function A solid-state image pickup device comprises a pixel array having static induction transistors disposed in a line for constituting pixels and integrating charges corresponding to amounts of received light, a readout circuit for scanning the static inductio... | 07/03/1990 |
| 4891682 | Solid state image pick-up device having a number of static induction transistor image sensors A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel reg... | 01/02/1990 |
| 4889826 | Static induction transistor and manufacturing method of the same A static induction transistor has in a surface region of a first type of high-resistance semiconductor a source region formed by a first type of diffusion layer and a gate region which surrounds said source region from at least two directions and which is... | 12/26/1989 |
| 4878120 | Solid state image sensor including static induction transistor with gate surrounding source and/or drain A disclosed solid state image pick-up element is constructed by a lateral static induction transistor in which source and drain regions thereof are arranged in a surface of a semiconductor layer formed on a substrate and a gate region for storing a light ... | 10/31/1989 |
| 4791396 | Color image sensor The present invention relates generally to a photodetector, and more particularly to a photodetector formed by a static induction transistor. The present invention includes the following constituent elements: In the photodetector formed by a static induction t... | 12/13/1988 |
| 4746984 | Solid state image sensor with lateral-type stactic induction transistors A solid state image sensor having a number of pixels each including a lateral type static induction transistor (LSITs) and arranged in matrix of mxn, gate terminals of LSITs arranged on respective rows are connected to outputs of a vertical scanning circu... | 05/24/1988 |
| 4733286 | Semiconductor photoelectric converting device A semiconductor photoelectric converting device for use in a solid state image sensor includes an insulating substrate, an n- epitaxial layer formed on the substrate, n+ source and drain regions formed by diffusing n type impurities ... | 03/22/1988 |
| 4725873 | Semiconductor imaging device A semiconductor imaging device composed of a matrix of pixels, each pixel being implemented with a single static induction transistor. Each static induction transistor includes a pair of principal electrode regions disposed facing each other through a hig... | 02/16/1988 |
| 4719499 | Semiconductor imaging device A semiconductor imaging device employing SIT (Static Induction Transistor) pixels having in the control gate region of each pixel a capacitor having optimum properties. Each pixel is constituted by an SIT having a pair of principal electrode regions of on... | 01/12/1988 |
| 4700231 | Solid state image sensing device A solid state image sensing device including a number of pixels arranged in a matrix form and comprised of lateral or vertical static induction transistors formed in a semiconductor chip, and a dummy pixel array arranged along a column in the chip and shi... | 10/13/1987 |
| 4686555 | Solid state image sensor A solid state image sensor comprising static induction transistors each forming a picture element. Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions... | 08/11/1987 |
| 4684966 | Static induction transistor photodetector having a deep shielding gate region A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a ver... | 08/04/1987 |
| 4684992 | Solid state image sensor having means to reset and clear static induction transistor photoelements A solid state image sensor including a number of lateral type static induction transistors arranged in a matrix, sources of all transistors being commonly connected to ground potential, gates of transistors arranged in each row being commonly connected to... | 08/04/1987 |
| 4684968 | JFET imager having light sensing inversion layer induced by insulator charge A solid state imaging element includes a semiconductor body consisting of a substrate of n+ conductivity type forming a drain region and of an epitaxial layer of n- conductivity type. In a surface of the epitaxial layer is a source r... | 08/04/1987 |
| 4678938 | Solid-state image sensing apparatus having an automatic control loop A solid-state image sensing apparatus employs normally-ON type static induction transistors to constitute picture elements. Some of the picture elements are shielded from light so as to serve as light-shielded picture elements. The apparatus is provided w... | 07/07/1987 |
| 4677453 | Solid state image sensor In a solid state image sensor including a plurality of light receiving elements in a matrix manner, each light receiving element is composed of a static induction transistor having a MOS gate construction formed on a surface of a semiconductor substrate a... | 06/30/1987 |
| 4673985 | Semiconductor image sensor A semiconductor image sensor is formed by static induction transistors, each provided with a control gate region which is a first gate region for control use and a shielding gate region which is a second gate region. The distance between an n+ ... | 06/16/1987 |
| 4665325 | Solid state image sensor with signal amplification A solid state image sensor has vertical BCCD, semiconductor substrate and photoelectric transducer formed in thickness direction of the semiconductor substrate by comprising SIT (static induction transistor), wherein holes generated by incident light are ... | 05/12/1987 |
| 4651180 | Semiconductor photoelectric transducer The present invention relates to a semiconductor FET or SIT type photoelectric transducer comprising a source and a drain which are main electrode regions of high impurity density; a high resistivity or intrinsic semiconductor region of the same conductiv... | 03/17/1987 |
| 4651015 | Semiconductor imaging device utilizing static induction transistors A semiconductor imaging device having a wide dynamic range to provide optimum output response characteristics under various illuminating conditions. The device includes a single SIT (Static Induction Transistor) which has a pair of principal electrode reg... | 03/17/1987 |
| 4644402 | Solid state image sensor A solid state image sensor having row lines connected to a vertical scanning circuit, column lines connected to a horizontal scanning circuit, a video line selectively connected to the column lines, and pixels arranged at cross points between the row and ... | 02/17/1987 |
| 4641167 | Semiconductor optoelectro transducer A semiconductor optoelectro transducer is highly sensitive in infrared to far infrared regions and is operable at high speed. To this end, the optoelectro transducer is formed by a static induction transistor or a static induction thyristor and an element... | 02/03/1987 |
| 4639753 | Semiconductor device In a semiconductor device, the distance between a first gate region close to a source region and a second gate region, which are provided so as to sandwich therebetween a channel functioning as a path of carriers, is selected to be greater than a channel ... | 01/27/1987 |
| 4636865 | Solid state image sensor A solid state image sensor including a number of pixels arranged in a matrix form between row lines and column lines, successive pixels being read out by an XY address method to derive an image signal, each pixel being formed by a normally-on type static ... | 01/13/1987 |
| 4631592 | Semiconductor image sensor A semiconductor image sensor which has photocells arranged in a matrix form is miniaturized and integrated with high density, thereby to increase its light amplification factor and operating speed. To this end, each photocell is formed by a static inducti... | 12/23/1986 |
| 4626916 | Solid state image pickup device A solid state image pickup device having a shutter function is disclosed. The device comprises a plurality of picture cells each having a static induction transistor arranged in a matrix. The device further comprises a plurality of gate signal lines for s... | 12/02/1986 |
