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| Number | Title | Issue Date |
| 7420147 | Microchannel plate and method of manufacturing microchannel plate A method of fabricating a multichannel plate is provided. The method includes providing a N layers, each layer having an array of wells formed therein. The N layers are aligned and stacked. The stack of N layers are sliced along a first and second line of the array ... | 09/02/2008 |
| 6320189 | Device for the detection of multispectral infrared/visible radiation A device for the detection of multi-spectral infrared and visible radiation using a bolometric detector having at least one active layer and two control electrodes for the detection of both infrared and visible radiation, and also using at least one photo... | 11/20/2001 |
| 6144285 | Thermal sensor and method of making same A two level microbridge infrared thermal detector having an upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium having a high TCR and a resistivity in the range of 20K ohms to 50K ohms per square sheet re... | 11/07/2000 |
| 6114696 | Uncooled infrared detector An infrared radiation detector device comprises a dipole antenna mounted on a substrate and connected through blocking contacts to a bandgap detector element. The dipole antenna has a length which is approximately one half the wavelength of the incident i... | 09/05/2000 |
| 6114697 | Bandgap radiation detector An infrared radiation detector device has an array of detectors each of which comprises a pattern of parallel detector elements. Each detector produces a pixel signal for an image. The elements of the detector are photoconductive or photovoltaic bandgap m... | 09/05/2000 |
| 6111254 | Infrared radiation detector An infrared radiation detector is disclosed which is fabricated on a dielectric substrate. The detector utilizes photosensitive segments which are included within elongate members disposed on the surface of the substrate. The elongate members comprise pho... | 08/29/2000 |
| 6100525 | Uncooled infrared detector An infrared radiation detector device comprises a dipole antenna mounted on a substrate and connected through blocking contacts to a bandgap detector element. The dipole antenna has a length which is approximately one half the wavelength of the incident i... | 08/08/2000 |
| 5912464 | Infrared detector and manufacturing process An infrared detector includes a sensitive part having a sensitive element and conducting elements. The sensitive element includes a layer of material in which the resistivity varies with the temperature. The conducting elements perform the functions of el... | 06/15/1999 |
| 5345093 | Graded bandgap semiconductor device for real-time imaging Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radia... | 09/06/1994 |
| 5321290 | Thermal imaging devices A thermal imaging device having both serial and parallel content is provided by a number of infra-red radiation detector strips supported side by side on an insulating substrate, each strip having a number of read-out regions. To allow connection from the... | 06/14/1994 |
| 5254850 | Method and apparatus for improving photoconductor signal output utilizing a geometrically modified shaped confinement region A method and apparatus for improving photoconductor signal output is provided in which a photon collection aperture receives photons. Charge carriers are generated in response to the photons in a charge generation region. These charge carriers are conduct... | 10/19/1993 |
| 5185648 | Plural-wavelength infrared detector devices An infrared detector device for at least two wavelengths, i.e. 3 to 5 microns and 8 to 14 microns, comprises detector elements (10 and 20) formed in two or more infrared-sensitive materials with different badgaps, e.g. in cadmium mercury telluride. These ... | 02/09/1993 |
| 5072122 | Charge storage image device using persistent photoconductivity crystals Mixed II-VI crystal semiconductors (10) having the general formula Znx Cd1-x Se, where x is up to about 0.4, are provided which exhibit persistent photoconductivity (PPC) above 70° K. which is quenchable by infrared radiation. An el... | 12/10/1991 |
| 4956687 | Backside contact blocked impurity band detector A blocked impurity band detector having a high fill factor is comprised of a radiation detecting layer and an overlying blocking layer which are interposed between a plurality of rear contact regions and a frontside common electrical contact layer. Dispos... | 09/11/1990 |
| 4926228 | Photoconductive detector arranged for bias field concentration at the output bias contact A detector, of photosensitive semiconductor material with input and output bias contacts. To improve both frequency response and spatial resolution, minority carriers having tendency to accumulate in the vicinity of the output bias contact are instead rap... | 05/15/1990 |
| 4889984 | Radiation detector arrays having reduced number of signal paths A radiation detector for use in a system for determining the centroid of an image incident thereon comprises an array of photodetector elements formed on a substrate and electrically connected, preferably by selective metallization to form desired groups ... | 12/26/1989 |
| 4883962 | Thermal imaging devices A thermal imaging system including a biassed elongate detector element of photoconductive material, over which an image of a thermal scene is scanned at a velocity that is matched to the drift velocity of photocarriers generated in the element. In order t... | 11/28/1989 |
| 4859851 | Thermal-radiation imaging devices and systems, and the manufacture of such imaging devices A thermal-radiation imaging device comprises at least one semconductor body portion (10,20,30,40), e.g. of n-type cadmium mercury telluride, on which biasing-electrode means (1 to 4 and 4b to 44b), e.g. of gold, are spaced for causing a bias current predo... | 08/22/1989 |
| 4801802 | Imaging, device, elements and systems Thermal-radiation imaging devices, elements and systems are described. The device comprises on a substrate (2) e.g. of sapphire semiconductor bodies or body portions in the form of parallel elongate strips (1), e.g. of cadmium mercury telluride. Biasing-e... | 01/31/1989 |
| 4731640 | High resistance photoconductor structure for multi-element infrared detector arrays A high resistance, low noise, multi-layer, thin film photoconductive, infrared detector operable to be easily coupled to charge couple devices; having an enhanced photoconductive gain due to the use of a bias voltage across a depletion layer of n-doped Hg... | 03/15/1988 |
| 4709252 | Integrated photo-responsive metal oxide semiconductor circuit An infrared photo-responsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device (10) by depositing a layer of a lead chalcogenide as a photo-resistive element forming an ohmic bridge b... | 11/24/1987 |
| 4628203 | Non-delineated detector having a differential readout The present invention is an improvement on the thermal imaging detector of Elliott (U.S. Pat. No. 3,995,195). This detector, which has come to be called the SPRITE detector (Signal PRocessing In The Element), is being applied in serially scanned thermal i... | 12/09/1986 |
| 4620209 | Mosaic pattern of infrared detectors of different cut off wave lengths The disclosure relates to an infrared detector and method of making an infrared detector having HgCdTe detectors in the same focal plane of different compositions responsive to two or more different infrared frequency windows. This is accomplished by usin... | 10/28/1986 |
| 4584475 | Surface acoustic wave infrared line imaging array A surface acoustic wave infrared line imaging array having a first interdigital transducer generating a first surface acoustic wave train amplitude modulated by the temperature profile of the substrate in response to a line segment of a received infrared ... | 04/22/1986 |
| 4551623 | Photoconductive detector with an A/C bias and responsivity dependent upon the polarity of the bias An alternating bias is applied to a modified photoconductive detector and photosignal extracted from each detector element. This extraction may be performed using an integrator to produce a dc signal output, or alternatively by using a high-pass filter or... | 11/05/1985 |
| 4535232 | Method of biasing a photoconductive detector and detector apparatus therefor It is a problem extracting the photosignal component from detector output, to the exclusion of pedestal bias response. To overcome this, a time varying bias signal is applied to each element of the detector. The duration of the time varying bias signal, o... | 08/13/1985 |
| 4531059 | Non-delineated semiconductor detector array for infra-red A detector comprising an elongated strip of semiconductor material which is photoconductive by the generation of electron and hole photocarriers when an image is moved along the strip. The strip includes an active region and a readout region. A first bias... | 07/23/1985 |
| 4507674 | Backside illuminated blocked impurity band infrared detector A rear illuminated radiation detector comprising a rear contact adjacent to a substrate substantially transparent to incident radiation of a given frequency range, detector and blocking layers overlying said rear contact, and a front contact overlying the... | 03/26/1985 |
| 4482807 | Imaging devices and systems In a thermal-radiation imaging device a detector element comprises a semiconductor strip, e.g. of n-type cadmium mercury telluride, on which biasing-electrode means are spaced for causing a bias current predominantly of majority charge carriers to flow al... | 11/13/1984 |
| 4467201 | Imaging devices and systems In a thermal-radiation imaging device a plurality of photoconductive detector elements are present on a common substrate. Each detector element comprises a semiconductor strip on which biasing-electrode means are spaced for causing a bias current predomin... | 08/21/1984 |
| 4445269 | Methods of making infrared photoconductors with passivation control An array of semiconductive photoconductor detectors is formed on a substr with which the array forms a heterojunction. The array has a whole or partial overlayer of the same material as the substrate. Ohmic connections are made on the detectors and condu... | 05/01/1984 |
| 4347526 | Radiation detectors In a radiation detector including a substrate of photoconductive material having input and output contacts, the photocarrier flow-path between the two contacts includes regions of conductive material. These regions may be formed as strips overlying the su... | 08/31/1982 |
| 4310583 | Manufacture of a group of infra-red detector elements, and a group so manufactured A group of infra-red radiation detector elements are manufactured from a body (21) of infra-red sensitive materials on an insulating substrate (22) using two masking steps which do not require critical alignment even with close spacing between the element... | 01/12/1982 |
| 4236165 | Planar semiconductor device Planar semiconductor device including a crystalline layer of Gax Al1-x Sb compound semiconductor (0.1 | 11/25/1980 |
| 4231052 | Apparatus for parallel-in to serial-out conversion Apparatus for parallel-in to serial-out conversion comprises a strip of semiconductor material having electrical contacts at either end, and a detector near one end, sensitive to the local density of ambipolar carriers. Minority carriers (or ambipolar car... | 10/28/1980 |
| 4162507 | Contact structure for a multiple semiconductor component A contact structure for a multiple semiconductor component comprises at least two adjacent hand shaped connecting contact arrangements with the fingers parting in opposite directions and splayed out, each finger being interrupted by one of the individual ... | 07/24/1979 |
| 4081819 | Mercury cadmium telluride device A mercury cadmium telluride semiconductor device includes an epitaxial layer of mercury cadmium telluride on a first substrate. A silicone rubber adhesive layer bonds the first substrate to a second substrate.... | 03/28/1978 |
| 4079507 | Method of making silicon-insulator-polysilicon infrared imaging device with orientially etched detectors A layer of epitaxial silicon is grown on an epi-silicon growth substrate, a thin silicon dioxide layer is grown on the epitaxial layer, and thick layer of polysilicon is grown on the dioxide layer. The epi-silicon layer is then removed, and the epitaxial ... | 03/21/1978 |
| 4069095 | Method of preparing photodetector array elements A method of preparing photodetector array elements from a body of photodetector material wherein conductive layers of a metal are formed on selected portions of a substrate, the conductive layers are coated with a photoresist material, an adhesive layer i... | 01/17/1978 |
| 4062107 | Method of manufacturing infra-red detector A method of manufacturing an infra-red detector in which a printed form of lead-out contact pattern is applied to the surface of each infra-red sensitive element. A detector element of infra-red sensitive material is provided having at one major side at l... | 12/13/1977 |
