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| Number | Title | Issue Date |
| 7405458 | Asymmetric field transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ... | 07/29/2008 |
| 7329937 | Asymmetric field effect transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical ... | 02/12/2008 |
| 7307327 | Reduced crosstalk CMOS image sensors CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels ext... | 12/11/2007 |
| 6657194 | Multispectral monolithic infrared focal plane array detectors At a face of a silicon semiconductor substrate tilted about one degree from a [100] orientation, a readout integrated circuit (ROIC) is implemented, specially designed and fabricated for direct epitaxial growth. Layers of II-VI semiconductor material, pre... | 12/02/2003 |
| 6534758 | Electromagnetic wave detector using quantum wells and subtractive detectors The basic idea is as follows: operational simulations of subtractive focal planes, based on the French patent No. 2 756 666, have shown that the optimal subtraction rate should not be total in order to preserve the dynamic range of the system. In this cas... | 03/18/2003 |
| 6379979 | Method of making infrared and visible light detector A photosensitive element may be formed by an upper layer which is sensitive to visible light and a lower layer which is sensitive to infrared radiation. By making the upper device infrared transparent, the upper device can detect visible light while the l... | 04/30/2002 |
| 6355939 | Multi-band infrared photodetector An infrared detector array includes a plurality of detector pixel structures, each having a plurality of coplanar sections responsive to different bands of infrared radiations. Each section of a pixel structure comprises a plurality of elongate quantum we... | 03/12/2002 |
| 6198147 | Detecting infrared and visible light A photosensitive element may be formed by an upper layer which is sensitive to visible light and a lower layer which is sensitive to infrared radiation. By making the upper device infrared transparent, the upper device can detect visible light while the l... | 03/06/2001 |
| 6184538 | Dual-band quantum-well infrared sensing array having commonly biased contact layers Quantum-well sensing arrays for detecting radiation with two or more wavelengths. Each pixel includes at least two different quantum-well sensing stacks that are biased at a common voltage.... | 02/06/2001 |
| 6034407 | Multi-spectral planar photodiode infrared radiation detector pixels Multi-spectral planar photodiode pixels are provided in accordance with the present invention for simultaneously detecting multi-colors of infrared radiation. Each multispectral planar photodiode pixel includes a semiconductor substrate layer, a buffer la... | 03/07/2000 |
| 5959299 | Uncooled infrared sensors for the detection and identification of chemical products of combustion This is a sensor for, and a method of, determining if a particular type of flame is present, using at least two uncooled HgCdTe detector films on a common IR transmissive substrate. Specific examples of the types of radiation which can be identified inclu... | 09/28/1999 |
| 5808329 | Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials An imaging device (10, 10') has a plurality of unit cells (11) that contribute to forming an image of a scene. The imaging device includes a layer of wide bandgap semiconductor (18) material (e.g., silicon) having photogate charge-mode readout circuitry (... | 09/15/1998 |
| 5808350 | Integrated IR, visible and NIR sensor and methods of fabricating same An imaging device (10) has a plurality of unit cells that contribute to forming an image of a scene. The imaging device includes a layer of semiconductor material (16), for example silicon, that has low noise photogate charge-mode readout circuitry (20, 2... | 09/15/1998 |
| 5751049 | Two-color infrared detector A two-color infrared detector (50) is provided comprising elements (10, 110, or 210) having one or more diodes (58, 158 and 168) and a metal insulator semiconductor ("MIS") device (56 and 156). The infrared detector (50) may be referred to as a vertically... | 05/12/1998 |
| 5751005 | Low-crosstalk column differencing circuit architecture for integrated two-color focal plane arrays An integrated two-color staring focal plane array is comprised of rows and columns of photodetector unit cells (10), each being capable of simultaneously integrating photocurrents resulting from the detection of two spectral bands. A readout circuit (20) ... | 05/12/1998 |
